Regulating the Auger Recombination Process in Two-Dimensional Sn-Based Halide Perovskites
Source abstract
Abstract
Two-dimensional tin iodide perovskite light-emitting diodes (LEDs) suffer from severe efficiency roll-off owing to the strong Auger recombination process. However, there has been controversy about the influence of defects and phonon scattering in regulating the Auger recombination process of Sn-based halide perovskites. In this study, we combine cation engineering, temperature-dependent transient absorption spectroscopy, and defect repair engineering to systematically investigate these effects on the Auger recombination rate of layered A2SnI4 (A = C6H5CH2CH2NH3+ (PEA+) and CH3(CH2)3NH3+ (BA+)) perovskites. The defect scattering and exciton–phonon scattering can reduce the exciton diffusion rate to influence the Auger recombination rate. Our study further reveals that defect scattering dominates in regulating the Auger recombination rate in two-dimensional Sn-based perovskites and is stronger than the exciton–phonon coupling effect. This work provides further insight into the inherent factors influencing the development of two-dimensional Sn-based halide perovskites in laser and LED technologies.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Perovskite Materials and Applications · Chalcogenide Semiconductor Thin Films · Organic and Molecular Conductors Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Laboratory of Micro-Nano Optoelectronic Materials and Devices, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Department of Physics, Shanghai Key Laboratory of Materials Protection and Advanced Materials in Electric Power, Shanghai University of Electric Power, Shanghai 200090, China
State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai 201800, China
Funding
National Natural Science Foundation of China · Chinese Academy of Sciences · Shanghai Science and Technology International Cooperation Fund
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