Toward High-Performance Electron/Hole-Transporting-Layer-Free, Self-Powered CsPbIBr₂ Photodetectors via Interfacial Engineering

Self-powered photodetectors (PDs) with inorganic lead halide perovskites hold multiple traits of high sensitivity, fast response, independence from external power supply, and excellent sustainability and stability, thus holding a great promise for practical applications. However, they generally contain high-temperature-processed electron-transporting layers (ETLs) and high-cost, unstable hole-transporting layers (HTLs) coupled with noble metal electrodes, which bring significant obstacles of production cost and stability for their potential commercialization. Herein, we demonstrate the building of high-performance HTL/ETL-free, self-powered CsPbIBr2 PD with simplified architecture of fluorine-doped tin oxide (FTO)/CsPbIBr2/carbon upon interfacial modification by polyethyleneimine (PEI). The optimized PD yields a dark current of 2.03 × 10–9 A, peak responsivity (R) of 0.32 A/W, maximum specific detectivity (D*) of 3.74 × 1012 Jones, and response time of 1.21 μs. These figures of merit are far beyond those of the one prepared without PEI modification and even the PD containing TiO2 ETL. Hence, our work suggests a highly feasible route to develop self-powered PDs with significantly simplified fabrication and a reduced production cost.