Simple Way to Engineer Metal–Semiconductor Interface for Enhanced Performance of Perovskite Organic Lead Iodide Solar Cells
Source abstract
Abstract
A thin wide band gap organic semiconductor N,N,N',N'-tetraphenyl-benzidine layer has been introduced by spin-coating to engineer the metal-semiconductor interface in the hole-conductor-free perovskite solar cells. The average cell power conversion efficiency (PCE) has been enhanced from 5.26% to 6.26% after the modification and a highest PCE of 6.71% has been achieved. By the aid of electrochemical impedance spectroscopy and dark current analysis, it is revealed that this modification can increase interfacial resistance of CH3NH3PbI3/Au interface and retard electron recombination process in the metal-semiconductor interface.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Perovskite Materials and Applications · Conducting polymers and applications · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, China
The Co-Innovation Center of Chemistry and Chemical Engineering of Tianjin, Tianjin 300072, China
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