High-speed logic integrated circuits with solution-processed self-assembled carbon nanotubes
Source abstract
Abstract
As conventional monolithic silicon technology struggles to meet the requirements for the 7-nm technology node, there has been tremendous progress in demonstrating the scalability of carbon nanotube field-effect transistors down to the size that satisfies the 3-nm node and beyond. However, to date, circuits built with carbon nanotubes have overlooked key aspects of a practical logic technology and have stalled at simple functionality demonstrations. Here, we report high-performance complementary carbon nanotube ring oscillators using fully manufacturable processes, with a stage switching frequency of 2.82 GHz. The circuit was built on solution-processed, self-assembled carbon nanotube arrays with over 99.9% semiconducting purity, and the complementary feature was achieved by employing two different work function electrodes.
Source: europepmc · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Carbon Nanotubes in Composites · Mechanical and Optical Resonators · Analog and Mixed-Signal Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (29)
Show source-provided references
1. Franklin, A. D. et al. Sub-10 nm carbon nanotube transistor. Nano Lett. 12, 758–762 (2012).10.1021/nl203701g ↗
2. Cao, Q. et al. End-bonded contacts for carbon nanotube transistors with low, size-independent resistance. Science 350, 68–72 (2015).10.1126/science.aac8006 ↗
3. Shulaker, M. M. et al. Carbon nanotube computer. Nature 501, 526–530 (2013).10.1038/nature12502 ↗
4. Cao, Q. et al. Medium-scale carbon nanotube thin-film integrated circuits on flexible plastic substrates. Nature 454, 495–500 (2008).10.1038/nature07110 ↗
5. Geier, M. L. et al. Solution-processed carbon nanotube thin-film complementary static random access memory. Nat. Nanotech. 10, 944–948 (2015).10.1038/nnano.2015.197 ↗
6. Kocabas, C., Kang, S. J., Ozel, T., Shim, M. & Rogers, J. A. Improved synthesis of aligned arrays of single-walled carbon nanotubes and their implementation in thin film type transistors. J. Phys. Chem. C 111, 17879–17886 (2007).10.1021/jp071387w ↗
7. Wang, C. A. et al. Synthesis and device applications of high-density aligned carbon nanotubes using low-pressure chemical vapor deposition and stacked multiple transfer. Nano Res. 3, 831–842 (2010).10.1007/s12274-010-0054-0 ↗
8. Patil, N. et al. Scalable carbon nanotube computational and storage circuits immune to metallic and mispositioned carbon nanotubes. IEEE Trans. Nanotechnol. 10, 744–750 (2011).10.1109/TNANO.2010.2076323 ↗
9. Jin, S. H. et al. Using nanoscale thermocapillary flows to create arrays of purely semiconducting single-walled carbon nanotubes. Nat. Nanotech. 8, 347–355 (2013).10.1038/nnano.2013.56 ↗
10. Yang, F. et al. Chirality-specific growth of single-walled carbon nanotubes on solid alloy catalysts. Nature 510, 522–524 (2014).10.1038/nature13434 ↗
11. Collins, P. G., Bradley, K., Ishigami, M. & Zettl, A. Extreme oxygen sensitivity of electronic properties of carbon nanotubes. Science 287, 1801–1804 (2000).10.1126/science.287.5459.1801 ↗
12. Klinke, C., Chen, J., Afzali, A. & Avouris, P. Charge transfer induced polarity switching in carbon nanotube transistors. Nano Lett. 5, 555–558 (2005).10.1021/nl048055c ↗
13. Javey, A. et al. High performance n-type carbon nanotube field-effect transistors with chemically doped contacts. Nano Lett. 5, 345–348 (2005).10.1021/nl047931j ↗
14. Franklin, A. D. et al. Carbon nanotube complementary wrap-gate transistors. Nano Lett. 13, 2490–2495 (2013).10.1021/nl400544q ↗
15. Tang, J. et al. Carbon nanotube complementary logic with low-temperature processed end-bonded metal contacts. IEDM Tech. Digest 5.1.1–5.1.4 (2016).10.1109/IEDM.2016.7838350 ↗
16. Qiu, C. et al. Scaling carbon nanotube complementary transistors to 5-nm gate lengths. Science 355, 271–276 (2017).10.1126/science.aaj1628 ↗
17. Han, S.-J. et al. Carbon nanotube complementary logic based on erbium contacts and self-assembled high purity solution tubes. IEDM Tech. Digest 19.8.1–19.8.4 (2013).10.1109/IEDM.2013.6724664 ↗
18. Ha, M. et al. Aerosol jet printed, low voltage, electrolyte gated carbon nanotube ring oscillators with sub-5 μs stage delays. Nano Lett. 13, 954–960 (2013).10.1021/nl3038773 ↗
19. Sun, D.-m. et al. Flexible high-performance carbon nanotube integrated circuits. Nat. Nanotech. 6, 156–161 (2011).10.1038/nnano.2011.1 ↗
20. Ha, M. et al. Printed, sub-3V digital circuits on plastic from aqueous carbon nanotube inks. ACS Nano 4, 4388–4395 (2010).10.1021/nn100966s ↗
21. Bachtold, A., Hadley, P., Nakanishi, T. & Dekker, C. Logic circuits with carbon nanotube transistors. Science 294, 1317–1320 (2001).10.1126/science.1065824 ↗
22. Javey, A., Wang, Q., Ural, A., Li, Y. & Dai, H. Carbon nanotube transistor arrays for multistage complementary logic and ring oscillators. Nano Lett. 2, 929–932 (2002).10.1021/nl025647r ↗
23. Chen, Z. et al. An integrated logic circuit assembled on a single carbon nanotube. Science 311, 1735 (2006).10.1126/science.1122797 ↗
24. Shahrjerdi, D. et al. High device yield carbon nanotube NFETs for high-performance logic applications. IEDM Techn. Digest 23.3.1–23.3.4 (2011).10.1109/IEDM.2011.6131596 ↗
25. Mistry, K. S., Larsen, B. A. & Blackburn, J. L. High-yield dispersions of large-diameter semiconducting single-walled carbon nanotubes with tunable narrow chirality distributions. ACS Nano 7, 2231–2239 (2013).10.1021/nn305336x ↗
26. Nish, A., Hwang, J.-Y., Doig, J. & Nicholas, R. J. Highly selective dispersion of single-walled carbon nanotubes using aromatic polymers. Nat. Nanotech. 2, 640–646 (2007).10.1038/nnano.2007.290 ↗
27. Tulevski, G. S., Franklin, A. D. & Afzali, A. High purity isolation and quantification of semiconducting carbon nanotubes via column chromatography. ACS Nano 7, 2971–2976 (2013).10.1021/nn400053k ↗
28. Park, H. et al. High-density integration of carbon nanotubes via chemical self-assembly. Nat. Nanotech. 7, 787–791 (2012).10.1038/nnano.2012.189 ↗
29. Klinke, C., Hannon, J. B., Afzali, A. & Avouris, P. Field-effect transistors assembled from functionalized carbon nanotubes. Nano Lett. 6, 906–910 (2006).10.1021/nl052473f ↗