journal article·2025-01

Fully integrated multi-mode optoelectronic memristor array for diversified in-sensor computing

Heyi Huang, Xiangpeng Liang, Yuyan Wang, Jianshi Tang, Yuankun Li, Yiwei Du, Wen Sun, Jianing Zhang, Peng Yao, Xing Mou, Feng Xu, Jinzhi Zhang, Yuyao Lu, Zhengwu Liu, Jianlin Wang, Zhixing Jiang, Ruofei Hu, Ze Wang, Qingtian Zhang, Bin Gao, Xuedong Bai, Lu Fang, Qionghai Dai, Huaxiang Yin, He Qian, Huaqiang Wu

Nature Nanotechnology· Volume 20· Issue 1
Publisher page

Abstract

In-sensor computing, which integrates sensing, memory and processing functions, has shown substantial potential in artificial vision systems. However, large-scale monolithic integration of in-sensor computing based on emerging devices with complementary metal-oxide-semiconductor (CMOS) circuits remains challenging, lacking functional demonstrations at the hardware level. Here we report a fully integrated 1-kb array with 128 × 8 one-transistor one-optoelectronic memristor (OEM) cells and silicon CMOS circuits, which features configurable multi-mode functionality encompassing three different modes of electronic memristor, dynamic OEM and non-volatile OEM (NV-OEM). These modes are configured by modulating the charge density within the oxygen vacancies via synergistic optical and electrical operations, as confirmed by differential phase-contrast scanning transmission electron microscopy. Using this OEM system, three visual processing tasks are demonstrated: image sensory pre-processing with a recognition accuracy enhanced from 85.7% to 96.1% by the NV-OEM mode, more advanced object tracking with 96.1% accuracy using both dynamic OEM and NV-OEM modes and human motion recognition with a fully OEM-based in-sensor reservoir computing system achieving 91.2% accuracy. A system-level benchmark further shows that it consumes over 20 times less energy than graphics processing units. By monolithically integrating the multi-functional OEMs with Si CMOS, this work provides a cost-effective platform for diverse in-sensor computing applications.
Source: europepmc · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Advanced Memory and Neural Computing · Photoreceptor and optogenetics research · CCD and CMOS Imaging Sensors

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (40)

Show source-provided references
1. Zhou, F. et al. Optoelectronic resistive random access memory for neuromorphic vision sensors. Nat. Nanotechnol. 14, 776–782 (2019).10.1038/s41565-019-0501-3 ↗
2. Wu, N. Neuromorphic vision chips. Sci. China Inf. Sci. 61, 060421 (2018).10.1007/s11432-017-9303-0 ↗
3. Zhou, F. & Chai, Y. Near-sensor and in-sensor computing. Nat. Electron. 3, 664–671 (2020).10.1038/s41928-020-00501-9 ↗
4. Dai, S. et al. Emerging iontronic neural devices for neuromorphic sensory computing. Adv. Mater. 35, 2300329 (2023).10.1002/adma.202300329 ↗
5. Du, J. et al. A robust neuromorphic vision sensor with optical control of ferroelectric switching. Nano Energy 89, 106439 (2021).10.1016/j.nanoen.2021.106439 ↗
6. Li, G. et al. Photo-induced non-volatile VO2 phase transition for neuromorphic ultraviolet sensors. Nat. Commun. 13, 1729 (2022).10.1038/s41467-022-29456-5 ↗
7. Jang, H. et al. An atomically thin optoelectronic machine vision processor. Adv. Mater. 32, 2002431 (2020).10.1002/adma.202002431 ↗
8. Zhang, Z. et al. In-sensor reservoir computing system for latent fingerprint recognition with deep ultraviolet photo-synapses and memristor array. Nat. Commun. 13, 6590 (2022).10.1038/s41467-022-34230-8 ↗
9. Zhao, R. et al. A framework for the general design and computation of hybrid neural networks. Nat. Commun. 13, 3427 (2022).10.1038/s41467-022-30964-7 ↗
10. Wang, Y. et al. Optoelectronic synaptic devices for neuromorphic computing. Adv. Intell. Syst 3, 2000099 (2021).10.1002/aisy.202000099 ↗
11. Zhang, J., Dai, S., Zhao, Y., Zhang, J. & Huang, J. Recent progress in photonic synapses for neuromorphic systems. Adv. Intell. Syst. 2, 1900136 (2020).10.1002/aisy.201900136 ↗
12. Song, S. et al. Recent progress of optoelectronic and all-optical neuromorphic devices: a comprehensive review of device structures, materials, and applications. Adv. Intell. Syst. 3, 2000119 (2021).10.1002/aisy.202000119 ↗
13. John, R. A. et al. Reconfigurable halide perovskite nanocrystal memristors for neuromorphic computing. Nat. Commun. 13, 2074 (2022).10.1038/s41467-022-29727-1 ↗
14. Wang, T. et al. Reconfigurable neuromorphic memristor network for ultralow-power smart textile electronics. Nat. Commun. 13, 7432 (2022).10.1038/s41467-022-35160-1 ↗
15. Pi, L. et al. Broadband convolutional processing using band-alignment-tunable heterostructures. Nat. Electron. 5, 248–254 (2022).10.1038/s41928-022-00747-5 ↗
16. Mennel, L. et al. Ultrafast machine vision with 2D material neural network image sensors. Nature 579, 62–66 (2020).10.1038/s41586-020-2038-x ↗
17. Zhang, Z. et al. All-in-one two-dimensional retinomorphic hardware device for motion detection and recognition. Nat. Nanotechnol. 17, 27–32 (2022).10.1038/s41565-021-01003-1 ↗
18. Sun, L. et al. In-sensor reservoir computing for language learning via two-dimensional memristors. Sci. Adv. 7, eabg1455 (2021).10.1126/sciadv.abg1455 ↗
19. Wu, X. et al. Wearable in-sensor reservoir computing using optoelectronic polymers with through-space charge-transport characteristics for multi-task learning. Nat. Commun. 14, 468 (2023).10.1038/s41467-023-36205-9 ↗
20. Lao, J. et al. Ultralow-power machine vision with self-powered sensor reservoir. Adv. Sci. 9, 2106092 (2022).10.1002/advs.202106092 ↗
21. Zhong, Y. et al. A memristor-based analogue reservoir computing system for real-time and power-efficient signal processing. Nat. Electron. 5, 672–681 (2022).10.1038/s41928-022-00838-3 ↗
22. Liang, X. et al. Physical reservoir computing with emerging electronics. Nat. Electron. 7, 193–206 (2024).10.1038/s41928-024-01133-z ↗
23. Moon, J. et al. Temporal data classification and forecasting using a memristor-based reservoir computing system. Nat. Electron. 2, 480–487 (2019).10.1038/s41928-019-0313-3 ↗
24. Portner, K. et al. Analog nanoscale electro-optical synapses for neuromorphic computing applications. ACS. Nano. 15, 14776–14785 (2021).10.1021/acsnano.1c04654 ↗
25. Hu, L. et al. All-optically controlled memristor for optoelectronic neuromorphic computing. Adv. Funct. Mater. 31, 2005582 (2021).10.1002/adfm.202005582 ↗
26. Tan, H. et al. An optoelectronic resistive switching memory with integrated demodulating and arithmetic functions. Adv. Mater. 27, 2797–2803 (2015).10.1002/adma.201500039 ↗
27. Chen, J. Y. et al. Dynamic evolution of conducting nanofilament in resistive switching memories. Nano Lett. 13, 3671–3677 (2013).10.1021/nl4015638 ↗
28. Simanjuntak, F. M., Panda, D., Wei, K. H. & Tseng, T. Y. Status and prospects of ZnO-based resistive switching memory devices. Nanoscale Res. Lett. 11, 368 (2016).10.1186/s11671-016-1570-y ↗
29. Xu, N. et al. Characteristics and mechanism of conduction/set process in TiN/ZnO/Pt resistance switching random-access memories. Appl. Phys. Lett. 92, 232112 (2008).10.1063/1.2945278 ↗
30. Zhou, Z., Pei, Y., Zhao, J., Fu, G. & Yan, X. Visible light responsive optoelectronic memristor device based on CeOx/ZnO structure for artificial vision system. Appl. Phys. Lett. 118, 191103 (2021).10.1063/5.0047403 ↗
31. Wang, T.-Y. et al. Reconfigurable optoelectronic memristor for in-sensor computing applications. Nano Energy 89, 106291 (2021).10.1016/j.nanoen.2021.106291 ↗
32. Wang, W. et al. CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistor. Nat. Commun. 14, 6079 (2023).10.1038/s41467-023-41868-5 ↗
33. Wang, Z. et al. Vacancy driven surface disorder catalyzes anisotropic evaporation of ZnO (0001) polar surface. Nat. Commun. 13, 5616 (2022).10.1038/s41467-022-33353-2 ↗
34. Lanza, M. et al. Recommended methods to study resistive switching devices. Adv. Electron. Mater. 5, 1800143 (2019).
35. Kuzum, D., Yu, S. & Wong, H. S. Synaptic electronics: materials, devices and applications. Nanotechnology 24, 382001 (2013).10.1088/0957-4484/24/38/382001 ↗
36. Russo, P., Xiao, M., Liang, R. & Zhou, N. Y. UV-induced multilevel current amplification memory effect in zinc oxide rods resistive switching devices. Adv. Funct. Mater. 28, 1706230 (2018).10.1002/adfm.201706230 ↗
37. Oh, I., Pyo, J. & Kim, S. Resistive switching and synaptic characteristics in ZnO/TaON-based RRAM for neuromorphic system. Nanomaterial 12, 2185 (2022).10.3390/nano12132185 ↗
38. Seo, S. et al. Artificial optic-neural synapse for colored and color-mixed pattern recognition. Nat. Commun. 9, 5106 (2018).10.1038/s41467-018-07572-5 ↗
39. Yilmaz, A., Javed, O. & Shah, M. Object tracking. ACM Comput. Surv. 38, 1–45 (2006).10.1145/1177352.1177355 ↗
40. Wang, S. et al. Networking retinomorphic sensor with memristive crossbar for brain-inspired visual perception. Natl Sci. Rev. 8, nwaa172 (2020).10.1093/nsr/nwaa172 ↗