High oscillator strength interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection
Source abstract
Abstract
The development of infrared photodetectors is mainly limited by the choice of available materials and the intricate crystal growth process. Moreover, thermally activated carriers in traditional III-V and II-VI semiconductors enforce low operating temperatures in the infrared photodetectors. Here we demonstrate infrared photodetection enabled by interlayer excitons (ILEs) generated between tungsten and hafnium disulfide, WS2/HfS2. The photodetector operates at room temperature and shows an even higher performance at higher temperatures owing to the large exciton binding energy and phonon-assisted optical transition. The unique band alignment in the WS2/HfS2 heterostructure allows interlayer bandgap tuning from the mid- to long-wave infrared spectrum. We postulate that the sizeable charge delocalization and ILE accumulation at the interface result in a greatly enhanced oscillator strength of the ILEs and a high responsivity of the photodetector. The sensitivity of ILEs to the thickness of two-dimensional materials and the external field provides an excellent platform to realize robust tunable room temperature infrared photodetectors.
Source: europepmc · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (65)
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1. Rogalski, A., Adamiec, K. & Rutkowski, J. Narrow-gap Semiconductor Photodiodes Vol. 77 (SPIE Press, 2000).10.1117/3.PM77.ch2 ↗
2. Iotti, R. C. & Andreani, L. C. A model for exciton binding energies in III–V and II–VI quantum wells. Semicond. Sci. Technol. 10, 1561–1567 (1995).10.1088/0268-1242/10/12/003 ↗
3. Zrenner, A. et al. Indirect excitons in coupled quantum well structures. Surf. Sci. 263, 496–450 (1992).10.1016/0039-6028(92)90396-N ↗
4. Hu, W. et al. Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors. J. Appl. Phys. 105, 104502 (2009).10.1063/1.3130163 ↗
5. Piotrowski, J. Uncooled operation of IR photodetectors. Opto-Electron. Rev. 12, 111–122 (2004).
6. Mak, K. F. & Shan, J. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides. Nat. Photon. 10, 216–226 (2016).10.1038/nphoton.2015.282 ↗
7. Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N. & Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699–712 (2012).10.1038/nnano.2012.193 ↗
8. Manzeli, S., Ovchinnikov, D., Pasquier, D., Yazyev, O. V. & Kis, A. 2D transition metal dichalcogenides. Nat. Rev. Mater. 2, 17033 (2017).10.1038/natrevmats.2017.33 ↗
9. Novoselov, K., Mishchenko, A., Carvalho, A. & Neto, A. C. 2D materials and van der Waals heterostructures. Science 353, aac9439 (2016).10.1126/science.aac9439 ↗
10. Koppens, F. et al. Photodetectors based on graphene, other two-dimensional materials and hybrid systems. Nat. Nanotechnol. 9, 780–793 (2014).10.1038/nnano.2014.215 ↗
11. Cheiwchanchamnangij, T. & Lambrecht, W. R. Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2. Phys. Rev. B 85, 205302 (2012).10.1103/PhysRevB.85.205302 ↗
12. He, K. et al. Tightly bound excitons in monolayer WSe2. Phys. Rev. Lett. 113, 026803 (2014).10.1103/PhysRevLett.113.026803 ↗
13. Kaviraj, B. & Sahoo, D. Physics of excitons and their transport in two dimensional transition metal dichalcogenide semiconductors. RSC Adv. 9, 25439–25461 (2019).10.1039/C9RA03769A ↗
14. Rivera, P. et al. Observation of long-lived interlayer excitons in monolayer MoSe2–WSe2 heterostructures. Nat. Commun. 6, 6242 (2015).10.1038/ncomms7242 ↗
15. Wang, L. et al. One-dimensional electrical contact to a two-dimensional material. Science 342, 614–617 (2013).10.1126/science.1244358 ↗
16. Nair, R. R. et al. Fine structure constant defines visual transparency of graphene. Science 320, 1308–1308 (2008).10.1126/science.1156965 ↗
17. Chen, X. et al. Widely tunable black phosphorus mid-infrared photodetector. Nat. Commun. 8, 1672 (2017).10.1038/s41467-017-01978-3 ↗
18. Guo, Q. et al. Black phosphorus mid-infrared photodetectors with high gain. Nano Lett. 16, 4648–4655 (2016).10.1021/acs.nanolett.6b01977 ↗
19. Liu, Y. et al. Gate-tunable giant Stark effect in few-layer black phosphorus. Nano Lett. 17, 1970–1977 (2017).10.1021/acs.nanolett.6b05381 ↗
20. Long, M. et al. Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus. Sci. Adv. 3, e1700589 (2017).10.1126/sciadv.1700589 ↗
21. Long, M., Wang, P., Fang, H. & Hu, W. Progress, challenges, and opportunities for 2D material based photodetectors. Adv. Funct. Mater. 29, 1803807 (2018).10.1002/adfm.201803807 ↗
22. Yu, X. et al. Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor. Nat. Commun. 9, 1545 (2018).10.1038/s41467-018-03935-0 ↗
23. Qin, D. et al. Monolayer PdSe2: a promising two-dimensional thermoelectric material. Sci. Rep. 8, 2764 (2018).
24. Haastrup, S. et al. The computational 2D materials database: high-throughput modeling and discovery of atomically thin crystals. 2D Mater. 5, 042002 (2018).10.1088/2053-1583/aacfc1 ↗
25. Latini, S., Winther, K. T., Olsen, T. & Thygesen, K. S. Interlayer excitons and band alignment in MoS2/hBN/WSe2 van der Waals heterostructures. Nano Lett. 17, 938–945 (2017).10.1021/acs.nanolett.6b04275 ↗
26. Kunstmann, J. et al. Momentum-space indirect interlayer excitons in transition metal dichalcogenide van der Waals heterostructures. Nat. Phys. 14, 801–805 (2018).10.1038/s41567-018-0123-y ↗
27. Merkl, P. et al. Ultrafast transition between exciton phases in van der Waals heterostructures. Nat. Mater. 18, 691–696 (2019).10.1038/s41563-019-0337-0 ↗
28. Fogler, M., Butov, L. & Novoselov, K. High-temperature superfluidity with indirect excitons in van der Waals heterostructures. Nat. Commun. 5, 4555 (2014).10.1038/ncomms5555 ↗
29. Gong, C. et al. Band alignment of two-dimensional transition metal dichalcogenides: application in tunnel field effect transistors. Appl. Phys. Lett. 103, 053513 (2013).10.1063/1.4817409 ↗
30. Frisenda, R. et al. Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials. J. Phys. D 50, 074002 (2017).10.1088/1361-6463/aa5256 ↗
31. Rigosi, A. F., Hill, H. M., Li, Y., Chernikov, A. & Heinz, T. F. Probing interlayer interactions in transition metal dichalcogenide heterostructures by optical spectroscopy: MoS2/WS2 and MoSe2/WSe2. Nano Lett. 15, 5033–5038 (2015).10.1021/acs.nanolett.5b01055 ↗
32. Hong, X. et al. Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures. Nat. Nanotechnol. 9, 682 (2014).10.1038/nnano.2014.167 ↗
33. Kozawa, D. et al. Evidence for fast interlayer energy transfer in MoSe2/WS2 heterostructures. Nano Lett. 16, 4087–4093 (2016).10.1021/acs.nanolett.6b00801 ↗
34. Nagler, P. et al. Interlayer exciton dynamics in a dichalcogenide monolayer heterostructure. 2D Mater. 4, 025112 (2017).10.1088/2053-1583/aa7352 ↗
35. Rivera, P. et al. Valley-polarized exciton dynamics in a 2D semiconductor heterostructure. Science 351, 688–691 (2016).10.1126/science.aac7820 ↗
36. Baranowski, M. et al. Probing the interlayer exciton physics in a MoS2/MoSe2/MoS2 van der Waals heterostructure. Nano Lett. 17, 6360–6365 (2017).10.1021/acs.nanolett.7b03184 ↗
37. Butov, L. V., Shashkin, A. A., Dolgopolov, V. T., Campman, K. L. & Gossard, A. C. Magneto-optics of the spatially separated electron and hole layers in GaAs/AlxGa1–xAs coupled quantum wells. Phys. Rev. B 60, 8753–8758 (1999).10.1103/PhysRevB.60.8753 ↗
38. Zhang, C., Johnson, A., Hsu, C.-L., Li, L.-J. & Shih, C.-K. Direct imaging of band profile in single layer MoS2 on graphite: quasiparticle energy gap, metallic edge states, and edge band bending. Nano Lett. 14, 2443–2447 (2014).10.1021/nl501133c ↗
39. Liu, X. et al. Rotationally commensurate growth of MoS2 on epitaxial graphene. ACS Nano 10, 1067–1075 (2016).10.1021/acsnano.5b06398 ↗
40. Liu, H. et al. Molecular-beam epitaxy of monolayer and bilayer WSe2: a scanning tunneling microscopy/spectroscopy study and deduction of exciton binding energy. 2D Mater. 2, 034004 (2015).10.1088/2053-1583/2/3/034004 ↗
41. Rashba, E. & Gurgenishvili, G. To the theory of the edge absorption in semiconductors. Sov. Phys. Solid State 4, 759–760 (1962).
42. Rashba, E. A theory of impurity absorption of light in molecular crystals. Opt. Spektrosk. 2, 568–577 (1957).
43. Lau, K. W., Calvin, Gong, Z., Yu, H. & Yao, W. Interface excitons at lateral heterojunctions in monolayer semiconductors. Phys. Rev. B 98, 115427 (2018).10.1103/PhysRevB.98.115427 ↗
44. Meckbach, L., Huttner, U., Bannow, L., Stroucken, T. & Koch, S. Interlayer excitons in transition-metal dichalcogenide heterostructures with type-II band alignment. J. Phys. Condens. Matter 30, 374002 (2018).10.1088/1361-648X/aad984 ↗
45. Ross, J. S. et al. Interlayer exciton optoelectronics in a 2D heterostructure p–n junction. Nano Lett. 17, 638–643 (2017).10.1021/acs.nanolett.6b03398 ↗
46. Alexeev, E. M. et al. Resonantly hybridized excitons in moiré superlattices in van der Waals heterostructures. Nature 567, 81–86 (2019).10.1038/s41586-019-0986-9 ↗
47. Ruiz-Tijerina, D. A. & Fal’ko, V. I. Interlayer hybridization and moiré superlattice minibands for electrons and excitons in heterobilayers of transition-metal dichalcogenides. Phys. Rev. B 99, 125424 (2019).10.1103/PhysRevB.99.125424 ↗
48. Saleh, B. E., Teich, M. C. & Saleh, B. E. Fundamentals of Photonics (Wiley, 1991).10.1002/0471213748 ↗
49. Kanazawa, T. et al. Few-layer HfS2 transistors. Sci. Rep. 6, 22277 (2016).
50. Jin, Z., Li, X., Mullen, J. T. & Kim, K. W. Intrinsic transport properties of electrons and holes in monolayer transition-metal dichalcogenides. Phys. Rev. B 90, 045422 (2014).10.1103/PhysRevB.90.045422 ↗
51. Dhakal, K. P. et al. Confocal absorption spectral imaging of MoS2: optical transitions depending on the atomic thickness of intrinsic and chemically doped MoS2. Nanoscale 6, 13028–13035 (2014).10.1039/C4NR03703K ↗
52. McIntyre, J. & Aspnes, D. E. Differential reflection spectroscopy of very thin surface films. Surf. Sci. 24, 417–434 (1971).10.1016/0039-6028(71)90272-X ↗
53. Kresse, G. & Furthmüller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 54, 11169–11186 (1996).10.1103/PhysRevB.54.11169 ↗
54. Perdew, J. P., Burke, K. & Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865–3868 (1996).10.1103/PhysRevLett.77.3865 ↗
55. Blöchl, P. E. Projector augmented-wave method. Phys. Rev. B 50, 17953–17979 (1994).10.1103/PhysRevB.50.17953 ↗
56. Grimme, S., Antony, J., Ehrlich, S. & Krieg, H. A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H–Pu. J. Chem. Phys. 132, 154104 (2010).10.1063/1.3382344 ↗
57. Mortensen, J. J., Hansen, L. B. & Jacobsen, K. W. Real-space grid implementation of the projector augmented wave method. Phys. Rev. B 71, 035109 (2005).10.1103/PhysRevB.71.035109 ↗
58. Enkovaara, J. et al. Electronic structure calculations with GPAW: a real-space implementation of the projector augmented-wave method. J. Phys. Cond. Matter 22, 253202 (2010).10.1088/0953-8984/22/25/253202 ↗
59. Andersen, K., Latini, S. & Thygesen, K. S. Dielectric genome of van der Waals heterostructures. Nano Lett. 15, 4616–4621 (2015).10.1021/acs.nanolett.5b01251 ↗
60. Winther, K. T. & Thygesen, K. S. Band structure engineering in van der Waals heterostructures via dielectric screening: the GΔW method. 2D Mater. 4, 025059 (2017).10.1088/2053-1583/aa6531 ↗
61. Mostofi, A. A. et al. An updated version of Wannier90: a tool for obtaining maximally-localised Wannier functions. Comp. Phys. Comm. 185, 2309–2310 (2014).10.1016/j.cpc.2014.05.003 ↗
62. LiveLink for MATLAB User’s Guide (COMSOL, Inc., 2018).
63. Chen, Q. Y., Liu, M. Y., Cao, C. & He, Y. Engineering the electronic structure and optical properties of monolayer 1T-HfX2 using strain and electric field: a first principles study. Physica E 112, 49–58 (2019).10.1016/j.physe.2019.03.029 ↗
64. Ghosh, R. K. & Mahapatra, S. Monolayer transition metal dichalcogenide channel-based tunnel transistor. IEEE J. Electron Devices Soc. 1, 175–180 (2013).10.1109/JEDS.2013.2292799 ↗
65. Lukman, S. & Teng, J. High oscillator strength interlayer excitons in 2D heterostructures for mid-IR photodetection. Figshare https://doi.org/10.6084/m9.figshare.12220454.v1 (2020).10.6084/m9.figshare.12220454.v1 ↗