Spin Hall effect clocking of nanomagnetic logic without a magnetic field
Source abstract
Abstract
Spin-based computing schemes could enable new functionalities beyond those of charge-based approaches. Examples include nanomagnetic logic, where information can be processed using dipole coupled nanomagnets, as demonstrated by multi-bit computing gates. One fundamental benefit of using magnets is the possibility of a significant reduction in the energy per bit compared with conventional transistors. However, so far, practical implementations of nanomagnetic logic have been limited by the necessity to apply a magnetic field for clocking. Although the energy associated with magnetic switching itself could be very small, the energy necessary to generate the magnetic field renders the overall logic scheme uncompetitive when compared with complementary metal-oxide-semiconductor (CMOS) counterparts. Here, we demonstrate a nanomagnetic logic scheme at room temperature where the necessity for using a magnetic field clock can be completely removed by using spin-orbit torques. We construct a chain of three perpendicularly polarized CoFeB nanomagnets on top of a tantalum wire and show that an unpolarized current flowing through the wire can 'clock' the perpendicular magnetization to a metastable state. An input magnet can then drive the nanomagnetic chain deterministically to one of two dipole-coupled states, '2 up 1 down' or '2 down 1 up', depending on its own polarization. Thus, information can flow along the chain, dictated by the input magnet and clocked solely by a charge current in tantalum, without any magnetic field. A three to four order of magnitude reduction in energy dissipation is expected for our scheme when compared with state-of-the-art nanomagnetic logic.
Source: europepmc · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Magnetic properties of thin films · Quantum and electron transport phenomena · Quantum-Dot Cellular Automata
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References (30)
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1. Salahuddin, S. & Datta, S. Interacting systems for self-correcting low power switching. Appl. Phys. Lett. 90, 093503 (2007).10.1063/1.2709640 ↗
2. Behin-Aein, B., Datta, D., Salahuddin, S. & Datta, S. Proposal for an all-spin logic device with built-in memory. Nature Nanotech. 5, 266–270 (2010).10.1038/nnano.2010.31 ↗
3. Bandyopadhyay, S. & Cahay, M. Introduction to Spintronics (CRC, 2008).10.1201/9781420004748 ↗
4. Nikonov, D. E., Bourianoff G. I. & Ghani, T. Proposal of a spin torque majority gate logic. IEEE Electron. Dev. Lett. 32, 1128–1130 (2011).10.1109/LED.2011.2156379 ↗
5. Ikeda, S. et al. Magnetic tunnel junctions for spintronic memories and beyond. IEEE Trans. Electron. Dev. 54, 991–1002 (2007).10.1109/TED.2007.894617 ↗
6. Ohno, H., Endoh, T., Hanyu, T., Naoki, K. & Ikeda, S. Magnetic tunnel junction for nonvolatile CMOS logic. IEEE IEDM Tech. Digest 2010, 218–221 (2010).
7. Cowburn, R. P. & Welland, M. E. Room temperature magnetic quantum cellular automata. Science 287, 1466–1468 (2000).10.1126/science.287.5457.1466 ↗
8. Imre, A. et al. Majority logic gate for magnetic quantum-dot cellular automata. Science 311, 205–208 (2006).10.1126/science.1120506 ↗
9. Atulasimha, J. & Bandyopadhyay, S. Bennett clocking of nanomagnetic logic using multiferroic single-domain nanomagnets. Appl. Phys. Lett. 97, 173105 (2010).10.1063/1.3506690 ↗
10. Carlton, D. B., Emley, N. C., Tuchfeld, E. & Bokor, J. Simulation studies of nanomagnet-based logic architecture. Nano Lett. 8, 4173–4178 (2008).10.1021/nl801607p ↗
11. Alam, M. T. et al. On-chip clocking of nanomagnetic logic lines and gates. IEEE Trans. Nanotechnol. 11, 273–286 (2012).10.1109/TNANO.2011.2169983 ↗
12. Ju, X. et al. Nanomagnetic logic from partially irradiated Co/Pt nanomagnets. IEEE Trans. Nanotechnol. 11, 97–104 (2012).10.1109/TNANO.2011.2157974 ↗
13. Breitkreutz, S. et al. Majority gate for nanomagnetic logic with perpendicular magnetic anisotropy. IEEE Trans. Magn. 48, 4336–4339 (2012).10.1109/TMAG.2012.2197184 ↗
14. Lambson, B., Carlton, D. & Bokor, J. Exploring the thermodynamic limits of computation in intergrated systems: magnetic memory, nanomagnetic logic, and the Landauer limit. Phys. Rev. Lett. 107, 010604 (2011).10.1103/PhysRevLett.107.010604 ↗
15. Roy, K., Bandyopadhyay, S. & Atulasimha, J. Hybrid spintronics and straintronics: a magnetic technology for ultra low power energy computing and signal processing. Appl. Phys. Lett. 99, 063108 (2011).10.1063/1.3624900 ↗
16. Liu, L. et al. Spin–torque switching with the giant spin Hall effect of tantalum. Science 336, 555–558 (2012).10.1126/science.1218197 ↗
17. Liu, L., Lee, O. J., Gudmundsen, T. J., Ralph, D. C. & Buhrman, R. A. Current-induced switching of perpendicularly magnetized magnetic layers using spin torque from the spin Hall effect. Phys. Rev. Lett. 109, 096602 (2012).10.1103/PhysRevLett.109.096602 ↗
18. Haazen, P. P. J. et al. Domain wall depinning governed by the spin Hall effect. Nature Mater. 12, 299–303 (2013).10.1038/nmat3553 ↗
19. Miron, I. M. et al. Current-driven spin torque induced by the Rashba effect in a ferromagnetic metal layer. Nature Mater. 9, 230–234 (2010).10.1038/nmat2613 ↗
20. Miron, I. M. et al. Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection. Nature 476, 189–193 (2011).10.1038/nature10309 ↗
21. Suzuki, T. et al. Current-induced effective field in perpendicularly magnetized Ta/CoFeB/MgO wire. Appl. Phys. Lett. 98, 142505 (2011).10.1063/1.3579155 ↗
22. Kim, J. et al. Layer thickness dependence of the current induced effective field vector in Ta/CoFeB/MgO. Nature Mater. 12, 240–245 (2013).10.1038/nmat3522 ↗
23. Hirsch, J. E. Spin Hall effect. Phys. Rev. Lett. 83, 1834–1837 (1999).10.1103/PhysRevLett.83.1834 ↗
24. Ikeda, S. et al. A perpendicular anisotropy CoFeB–MgO magnetic tunnel junction. Nature Mater. 9, 721–724 (2010).10.1038/nmat2804 ↗
25. Bhowmik, D., You, L. & Salahuddin, S. Possible route to low current, high speed, dynamic switching in a perpendicular anisotropy CoFeB–MgO junction using spin Hall effect of Ta. IEEE IEDM Tech. Digest 2012, 29.7.1–29.7.4 (2012).
26. Nagaosa, N., Sinova, J., Onoda, S., MacDonald, A. H. & Ong, N. P. Anomalous Hall effect. Rev. Mod. Phys. 82, 1539–1592 (2010).10.1103/RevModPhys.82.1539 ↗
27. Alexandrou, M. et al. Spatial sensitivity mapping of Hall crosses using patterned magnetic nanostructures. J. Appl. Phys. 108, 043920 (2010).10.1063/1.3475485 ↗
28. Carlton, D. B. et al. Investigation of defects and errors in nanomagnetic logic circuits. IEEE Trans. Nanotechnol. 11, 760–762 (2012).10.1109/TNANO.2012.2196445 ↗
29. Nikonov, D. E. & Young, I. Overview of beyond-CMOS devices and a uniform methodology for their benchmarking. Proc. IEEE http://dx.doi.org/10.1109/JPROC.2013.2252317 (2013).10.1109/JPROC.2013.2252317 ↗
30. Niimi, Y. et. al. Giant spin Hall effect induced by skew scattering from bismuth impurities inside thin film CuBi alloys. Phys. Rev. Lett. 109, 156602 (2012).10.1103/PhysRevLett.109.156602 ↗