Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix
Source abstract
Abstract
Two-dimensional materials are promising candidates for future electronics due to unmatched device performance at atomic limit and low-temperature heterogeneous integration. To adopt these emerging materials in computing and optoelectronic systems, back end of line (BEOL) integration with mainstream technologies is needed. Here, we show the integration of large-area MoS2 thin-film transistors (TFTs) with nitride micro light-emitting diodes (LEDs) through a BEOL process and demonstrate high-resolution displays. The MoS2 transistors exhibit median mobility of 54 cm2 V-1s -1, 210 μA μm-1 drive current and excellent uniformity. The TFTs can drive micrometre-sized LEDs to 7.1 × 107 cd m-2 luminance under low voltage. Comprehensive analysis on driving capability, response time, power consumption and modulation scheme indicates that MoS2 TFTs are suitable for a range of display applications up to the high resolution and brightness limit. We further demonstrate prototypical 32 × 32 active-matrix displays at 1,270 pixels-per-inch resolution. Moreover, our process is fully monolithic, low-temperature, scalable and compatible with microelectronic processing.
Source: europepmc · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: 2D Materials and Applications · Nanowire Synthesis and Applications · Perovskite Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (44)
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1. Nakamura, S., Senoh, M. & Mukai, T. High‐power InGaN/GaN double‐heterostructure violet light emitting diodes. Appl. Phys. Lett. 62, 2390–2392 (1993).10.1063/1.109374 ↗
2. Li, G. et al. GaN-based light-emitting diodes on various substrates: a critical review. Rep. Prog. Phys. 79, 056501 (2016).10.1088/0034-4885/79/5/056501 ↗
3. Global Packaged GaN LED Market Report (Market Reports World, 2019); https://www.marketreportsworld.com/-global-packaged-gan-led-market-14194592
4. Jin, S. X., Li, J., Li, J. Z., Lin, J. Y. & Jiang, H. X. GaN microdisk light emitting diodes. Appl. Phys. Lett. 76, 631–633 (2000).10.1063/1.125841 ↗
5. Yuan, Y. F. et al. Potential key technologies for 6G mobile communications. Sci. China Inf. Sci. 63, 183301 (2020).10.1007/s11432-019-2789-y ↗
6. Lin, J. Y. & Jiang, H. X. Development of microLED. Appl. Phys. Lett. 116, 100502 (2020).10.1063/1.5145201 ↗
7. Wong, M. S., Nakamura, S. & DenBaars, S. P. Review—progress in high performance III-nitride micro-light-emitting diodes. ECS J. Solid State Sci. Technol. 9, 015012 (2019).10.1149/2.0302001JSS ↗
8. Huang, Y., Hsiang, E.-L., Deng, M.-Y. & Wu, S.-T. Mini-LED, micro-LED and OLED displays: present status and future perspectives. Light Sci. Appl. 9, 105 (2020).10.1038/s41377-020-0341-9 ↗
9. Liu, Z., Chong, W. C., Wong, K. M. & Lau, K. M. GaN-based LED micro-displays for wearable applications. Microelectron. Eng. 148, 98–103 (2015).10.1016/j.mee.2015.09.007 ↗
10. Park, S.-I. et al. Printed assemblies of inorganic light-emitting diodes for deformable and semitransparent displays. Science 325, 977–981 (2009).10.1126/science.1175690 ↗
11. Liu, Z. J., Chong, W. C., Wong, K. M. & Lau, K. M. 360 PPI flip-chip mounted active matrix addressable light emitting diode on silicon (LEDoS) micro-displays. J. Disp. Technol. 9, 678–682 (2013).10.1109/JDT.2013.2256107 ↗
12. Cok, R. S. et al. Inorganic light-emitting diode displays using micro-transfer printing. J. Soc. Inf. Disp. 25, 589–609 (2017).10.1002/jsid.610 ↗
13. Zhang, L., Ou, F., Chong, W. C., Chen, Y. & Li, Q. Wafer-scale monolithic hybrid integration of Si-based IC and III–V epi-layers—a mass manufacturable approach for active matrix micro-LED micro-displays. J. Soc. Inf. Disp. 26, 137–145 (2018).10.1002/jsid.649 ↗
14. Tull, B. R. et al. 26.2: Invited paper: high brightness, emissive microdisplay by integration of III‐V LEDs with thin film silicon transistors. SID Symp. Dig. Tech. Pap. 46, 375–377 (2015).10.1002/sdtp.10256 ↗
15. Akinwande, D. et al. Graphene and two-dimensional materials for silicon technology. Nature 573, 507–518 (2019).10.1038/s41586-019-1573-9 ↗
16. Liu, C. et al. Two-dimensional materials for next-generation computing technologies. Nat. Nanotechnol. 15, 545–557 (2020).10.1038/s41565-020-0724-3 ↗
17. Manzeli, S., Ovchinnikov, D., Pasquier, D., Yazyev, O. V. & Kis, A. 2D transition metal dichalcogenides. Nat. Rev. Mater. 2, 17033 (2017).10.1038/natrevmats.2017.33 ↗
18. Fiori, G. et al. Electronics based on two-dimensional materials. Nat. Nanotechnol. 9, 768–779 (2014).10.1038/nnano.2014.207 ↗
19. Yu, Z. et al. Realization of room-temperature phonon-limited carrier transport in monolayer MoS2 by dielectric and carrier screening. Adv. Mater. 28, 547–552 (2016).10.1002/adma.201503033 ↗
20. Li, W. et al. Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices. Nat. Electron. 2, 563–571 (2019).10.1038/s41928-019-0334-y ↗
21. Zhou, J. et al. A library of atomically thin metal chalcogenides. Nature 556, 355–359 (2018).10.1038/s41586-018-0008-3 ↗
22. Wang, Q. et al. Wafer-scale highly oriented monolayer MoS2 with large domain sizes. Nano Lett. 20, 7193–7199 (2020).10.1021/acs.nanolett.0c02531 ↗
23. Kang, Kibum et al. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity. Nature 520, 656–660 (2015).10.1038/nature14417 ↗
24. Tang, H. W. et al. Recent progress in devices and circuits based on wafer-scale transition metal dichalcogenides. Sci. China Inf. Sci. 62, 220401 (2019).10.1007/s11432-019-2651-x ↗
25. Goossens, S. et al. Broadband image sensor array based on graphene–CMOS integration. Nat. Photonics 11, 366–371 (2017).10.1038/nphoton.2017.75 ↗
26. Choi, M. et al. Full-color active-matrix organic light-emitting diode display on human skin based on a large-area MoS2 backplane. Sci. Adv. 6, eabb5898 (2020).10.1126/sciadv.abb5898 ↗
27. Liu, Y., Huang, Y. & Duan, X. Van der Waals integration before and beyond two-dimensional materials. Nature 567, 323–333 (2019).10.1038/s41586-019-1013-x ↗
28. Yu, J. et al. Van der Waals epitaxy of III‐nitride semiconductors based on 2D materials for flexible applications. Adv. Mater. 32, 1903407 (2020).10.1002/adma.201903407 ↗
29. Akinwande, D., Petrone, N. & Hone, J. Two-dimensional flexible nanoelectronics. Nat. Commun. 5, 5678 (2014).10.1038/ncomms6678 ↗
30. Zhuang, Z. et al. High color rendering index hybrid III-nitride/nanocrystals white light-emitting diodes. Adv. Funct. Mater. 26, 36–43 (2016).10.1002/adfm.201502870 ↗
31. Li, T. et al. Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire. Nat. Nanotechnol. https://doi.org/10.1038/s41565-021-00963-8 (2021).10.1038/s41565-021-00963-8 ↗
32. Pirkle, A. et al. The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2. Appl. Phys. Lett. 99, 122108 (2011).10.1063/1.3643444 ↗
33. Liu, Y. et al. Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions. Nature 557, 696–700 (2016).10.1038/s41586-018-0129-8 ↗
34. Huang, Y. et al. Universal mechanical exfoliation of large-area 2D crystals. Nat. Commun. 11, 2453 (2020).10.1038/s41467-020-16266-w ↗
35. Struthers, J. D. Solubility and diffusivity of gold, iron, and copper in silicon. J. Appl. Phys. 27, 1560 (1956).10.1063/1.1722310 ↗
36. Day, Jacob et al. III-Nitride full-scale high-resolution microdisplays. Appl. Phys. Lett. 99, 031116 (2011).10.1063/1.3615679 ↗
37. Smets, Q. et al. Sources of variability in scaled MoS2 FETs. In Proc. 2020 IEEE International Electron Devices Meeting (IEDM) 3.1.1–3.1.4 (IEEE, 2020).10.1109/IEDM13553.2020.9371890 ↗
38. Smithe, K. K. H., Suryavanshi, S. V., Muñoz Rojo, M., Tedjarati, A. D. & Pop, E. Low variability in synthetic monolayer MoS2 devices. ACS Nano 11, 8456–8463 (2017).10.1021/acsnano.7b04100 ↗
39. Huo, N. et al. High carrier mobility in monolayer CVD-grown MoS2 through phonon suppression. Nanoscale 10, 15071–15077 (2018).10.1039/C8NR04416C ↗
40. Yu, L. et al. Design, modeling, and fabrication of chemical vapor deposition grown MoS2 circuits with E-mode FETs for large-area electronics. Nano Lett. 16, 6349–6356 (2016).10.1021/acs.nanolett.6b02739 ↗
41. Polyushkin, D. et al. Analogue two-dimensional semiconductor electronics. Nat. Electron. 3, 486–491 (2020).10.1038/s41928-020-0460-6 ↗
42. Sebastian, A. et al. Benchmarking monolayer MoS2 and WS2 field-effect transistors. Nat. Commun. 12, 693 (2021).10.1038/s41467-020-20732-w ↗
43. Nomura, K. et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 432, 488–492 (2004).10.1038/nature03090 ↗
44. Wager, J. F. TFT technology: advancements and opportunities for improvement. Info Disp. 36, 9–13 (2020).