Individually addressable epitaxial ferroelectric nanocapacitor arrays with near Tb inch−2 density
Source abstract
Abstract
Ferroelectric materials have emerged in recent years as an alternative to magnetic and dielectric materials for nonvolatile data-storage applications. Lithography is widely used to reduce the size of data-storage elements in ultrahigh-density memory devices. However, ferroelectric materials tend to be oxides with complex structures that are easily damaged by existing lithographic techniques, so an alternative approach is needed to fabricate ultrahigh-density ferroelectric memories. Here we report a high-temperature deposition process that can fabricate arrays of individually addressable metal/ferroelectric/metal nanocapacitors with a density of 176 Gb inch(-2). The use of an ultrathin anodic alumina membrane as a lift-off mask makes it possible to deposit the memory elements at temperatures as high as 650 degrees C, which results in excellent ferroelectric properties.
Source: europepmc · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Acoustic Wave Resonator Technologies · Anodic Oxide Films and Nanostructures
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (31)
Show source-provided references
1. Auciello, O., Scott, J. F. & Ramesh, R. The physics of ferroelectric memories. Phys. Today 51, 22–27 (July 1998).10.1063/1.882324 ↗
2. Cheong, S.-W. & Mostovoy, M. Multiferroics: a magnetic twist for ferroelectricity. Nature Mater. 6, 13–20 (2007).10.1038/nmat1804 ↗
3. Cho, Y. Nanoscale ferroelectric information storage based on scanning nonlinear dielectric microscopy. J. Nanosci. Nanotechnol. 7, 105–116 (2007).10.1166/jnn.2007.18009 ↗
4. Cross, L. E. Ferroelectric Ceramics (ed. Setter, N. ) 1–85 (Birkhäuser, Basel, 1993).10.1007/978-3-0348-7551-6_1 ↗
5. Evans, P. R. et al. Toward self-assembled ferroelectric random access memories: Hard-wired switching capacitor arrays with almost Tb/in.2 densities. Nano Lett. 7, 1134–1137 (2007).10.1021/nl0626028 ↗
6. Alexe, M., Harnagea, C., Hesse, D. & Gösele, U. Polarization imprint and size effects in mesoscopic ferroelectric structures. Appl. Phys. Lett. 70, 242–244 (2001).10.1063/1.1385184 ↗
7. Bühlmann, S., Dwir, B., Baborowski, J. & Muralt, P. Size effect in mesoscopic epitaxial ferroelectric structures: Increase of piezoelectric response with decreasing feature size. Appl. Phys. Lett. 80, 3195–3197 (2002).10.1063/1.1475369 ↗
8. Ganpule, C. S. et al. Scaling of ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films. Appl. Phys. Lett. 75, 3874–3876 (1999).10.1063/1.125485 ↗
9. Stanishevsky, A. et al. Radiation damage and its recovery in focused ion beam fabricated ferroelectric capacitors. J. Appl. Phys. 92, 3275–3278 (2002).10.1063/1.1489069 ↗
10. Ahn, C. H. et al. Local, nonvolatile electronic writing of epitaxial Pb(Zr0.52Ti0.48)O3/SrRuO3 heterostructures. Science 276, 1100–1103 (1997).10.1126/science.276.5315.1100 ↗
11. Gruverman, A., Auciello, O. & Tokumoto, H. Imaging and control of domain structures in ferroelectric thin films via scanning force microscopy. Annu. Rev. Mater. Sci. 28, 101–123 (1998).10.1146/annurev.matsci.28.1.101 ↗
12. Cho, Y., Hashimoto, S., Odagawa, N., Tanaka, K. & Hiranaga, Y. Nanodomain manipulation for ultrahigh density ferroelectric data storage. Nanotechnology 17, S137–S141 (2006).10.1088/0957-4484/17/7/S06 ↗
13. Kalinin, S. V. et al. Intrinsic single-domain switching in ferroelectric materials on a nearly ideal surface. Proc. Natl Acad. Sci. USA 104, 20204–20209 (2007).10.1073/pnas.0709316104 ↗
14. Odagawa, N. & Cho, Y. Wall behavior of nanodomains as a function of their initial state. Appl. Phys. Lett. 89, 192906 (2006).10.1063/1.2385860 ↗
15. Torii, K. et al. Fabrication and properties of one-mask-patterned ferroelectric integrated capacitors. Electr. Eng. Jpn. 121, 43–50 (1997).10.1002/(SICI)1520-6416(199710)121:1<43::AID-EEJ6>3.0.CO;2-# ↗
16. Lee, S.-K. et al. Well-ordered large-area arrays of epitaxial ferroelectric (Bi,La)4Ti3O12 nanostructures fabricated by gold nanotube-membrane lithography. Appl. Phys. Lett. 86, 152906 (2005).10.1063/1.1899239 ↗
17. Lee, W., Alexe, M., Nielsch, K. & Gösele, U. Metal membranes with hierarchically organized nanotube arrays. Chem. Mater. 17, 3325–3327 (2005).10.1021/cm050480z ↗
18. Chu, M.-W., Szafraniak, I., Hesse, D., Alexe, M. & Gösele, U. Elastic coupling between 90 ° twin walls and interfacial dislocations in epitaxial ferroelectric perovskites: A quantitative high-resolution transmission electron microscopy study. Phys. Rev. B 72, 174112 (2005).10.1103/PhysRevB.72.174112 ↗
19. Lee, K., Yi, H., Park, W.-H., Kim, Y. K. & Baik, S. Lateral size effects on domain structure in epitaxial PbTiO3 thin films. J. Appl. Phys. 100, 051615 (2006).10.1063/1.2337358 ↗
20. Jesse, S. et al. Direct imaging of the spatial and energy distribution of nucleation centers in ferroelectric materials. Nature Mater. 7, 209–215 (2008).10.1038/nmat2114 ↗
21. Lee, K., Kim, K., Kwon, S.-J. & Baik, S. Two-dimensional planar size effects in epitaxial PbTiO3 thin films. Appl. Phys. Lett. 85, 4711–4713 (2004).10.1063/1.1823033 ↗
22. Nagarajan, V. et al. Dynamics of ferroelastic domains in ferroelectric thin films. Nature Mater. 2, 43–47 (2002).10.1038/nmat800 ↗
23. Speck, J. S. & Pompe, W. Domain configurations due to multiple misfit relaxation mechanisms in epitaxial ferroelectric thin films. I. Theory. J. Appl. Phys. 76, 466–476 (1994).10.1063/1.357097 ↗
24. Masuda, H. & Fukuda, K. Ordered metal nanohole arrays made by a two-step replication of honeycomb structures of anodic alumina. Science 268, 1466–1468 (1995).10.1126/science.268.5216.1466 ↗
25. Li, A. P., Müller, F., Birner, A., Nielsch, K. & Gösele, U. Hexagonal pore arrays with a 50–420 nm interpore distance formed by self-organization in anodic alumina. J. Appl. Phys. 84, 6023–6026 (1998).10.1063/1.368911 ↗
26. Lee, W., Ji, R., Ross, C. A., Gösele, U. & Nielsch, K. Wafer-scale Ni imprint stamps for porous alumina membranes based on interference lithography. Small 2, 978–982 (2006).10.1002/smll.200600100 ↗
27. Choi, J., Nielsch, K., Reiche, R., Wehrspohn, R. B. & Gösele, U. Fabrication of monodomain alumina pore arrays with an interpore distance smaller than the lattice constant of the imprint stamp. J. Vac. Sci. Technol. B 21, 763–766 (2003).10.1116/1.1556397 ↗
28. Sun, Z. & Kim, H. K. Growth of ordered, single-domain, alumina nanopore arrays with holographically patterned aluminum films. Appl. Phys. Lett. 81, 3458–3460 (2002).10.1063/1.1517719 ↗
29. Masuda, H., Yamada, H., Satoh, M. & Asoh, H. Highly ordered nanochannel-array architecture in anodic alumina. Appl. Phys. Lett. 71, 2770–2772 (1997).10.1063/1.120128 ↗
30. Lee, W., Ji, R., Gösele, U. & Nielsch, K. Fast fabrication of long-range ordered porous alumina membranes by hard anodization. Nature Mater. 5, 741–747 (2006).10.1038/nmat1717 ↗
31. Harnagea, C., Pignolet, A., Alexe, M. & Hesse, D. Piezoresponse scanning force microscopy: What quantitative information can we really get out of piezoresponse measurements on ferroelectric thin films. Intergr. Ferroelectr. 44, 113–124 (2002).10.1080/713718197 ↗