journal article·2009-12

Deterministic control of ferroelastic switching in multiferroic materials

N. Balke, S. Choudhury, S. Jesse, M. Huijben, Y. H. Chu, A. P. Baddorf, L. Q. Chen, R. Ramesh, S. V. Kalinin

Nature Nanotechnology· Volume 4· Issue 12
Publisher page

Abstract

Multiferroic materials showing coupled electric, magnetic and elastic orderings provide a platform to explore complexity and new paradigms for memory and logic devices. Until now, the deterministic control of non-ferroelectric order parameters in multiferroics has been elusive. Here, we demonstrate deterministic ferroelastic switching in rhombohedral BiFeO(3) by domain nucleation with a scanning probe. We are able to select among final states that have the same electrostatic energy, but differ dramatically in elastic or magnetic order, by applying voltage to the probe while it is in lateral motion. We also demonstrate the controlled creation of a ferrotoroidal order parameter. The ability to control local elastic, magnetic and torroidal order parameters with an electric field will make it possible to probe local strain and magnetic ordering, and engineer various magnetoelectric, domain-wall-based and strain-coupled devices.
Source: europepmc · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Multiferroics and related materials · Ferroelectric and Piezoelectric Materials · Underwater Acoustics Research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (38)

Show source-provided references
1. Scott, J. Ferroelectric Memories (Springer Verlag, 2000).10.1007/978-3-662-04307-3 ↗
2. Tybell, T., Ahn, C. H. & Triscone, J. M. Control and imaging of ferroelectric domains over large areas with nanometer resolution in atomically smooth epitaxial Pb(Zr0.2Ti0.8)O3 thin films. Appl. Phys. Lett. 72, 1454–1456 (1998).10.1063/1.120591 ↗
3. Tsymbal, E. Y. & Kohlstedt H. Applied physics—tunneling across a ferroelectric. Science 313, 181–183 (2006).10.1126/science.1126230 ↗
4. Miller, S. L. & McWhorter, P. J. Physics of the ferroelectric nonvolatile memory field-effect transistor. J. Appl. Phys. 72, 5999–6010 (1992).10.1063/1.351910 ↗
5. Mathews, S., Ramesh, R., Venkatesan, T. & Benedetto, J. Ferroelectric field effect transistor based on epitaxial perovskite heterostructures. Science 276, 238–240 (1997).10.1126/science.276.5310.238 ↗
6. Tanaka, K. et al. Scanning nonlinear dielectric microscopy nano-science and technology for next generation high density ferroelectric data storage. Jpn J. Appl. Phys. 47, 3311–3325 (2008).10.1143/JJAP.47.3311 ↗
7. Jesse, S. et al. Direct imaging of the spatial and energy distribution of nucleation centres in ferroelectric materials. Nature Mater. 7, 209–215 (2008).10.1038/nmat2114 ↗
8. Paruch, P., Giamarchi, T. & Triscone, J. M. Domain wall roughness in epitaxial ferroelectric PbZr0.2Ti0.8O3 thin films. Phys. Rev. Lett. 94, 197601 (2005).10.1103/PhysRevLett.94.197601 ↗
9. Li, L. J., Li, J. Y., Shu, Y. C. & Yen, J. H. The magnetoelectric domains and cross-field switching in multiferroic BiFeO3 . Appl. Phys. Lett. 93, 192506 (2008).10.1063/1.3025843 ↗
10. Ramesh, R. & Spaldin, N. A. Multiferroics: progress and prospects in thin films. Nature Mater. 6, 21–29 (2007).10.1038/nmat1805 ↗
11. Chu, Y. H. et al. Electric-field control of local ferromagnetism using a magnetoelectric multiferroic. Nature Mater. 7, 478–482 (2008).10.1038/nmat2184 ↗
12. Takamura, Y. et al. Tuning magnetic domain structure in nanoscale La0.7Sr0.3MnO3 islands. Nano Lett. 6, 1287–1291 (2006).10.1021/nl060615f ↗
13. Seidel, J. et al. Conduction at domain walls in oxide multiferroics. Nature Mater. 8, 229–234 (2009).10.1038/nmat2373 ↗
14. Catalan, G. & Scott, J. F. Physics and applications of bismuth ferrite. Adv. Mater. 21, 2463–2485 (2009).10.1002/adma.200802849 ↗
15. Bea, H. et al. Mechanisms of exchange bias with multiferroic BiFeO3 epitaxial thin films. Phys. Rev. Lett. 100, 017204 (2008).10.1103/PhysRevLett.100.017204 ↗
16. Bea, H. et al. Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films. Appl. Phys. Lett. 89, 242114 (2006).10.1063/1.2402204 ↗
17. Dho, J., Qi, X., Kim, H., MacManus-Driscoll, J. L. & Blamire, M. G. Large electric polarization and exchange bias in multiferroic BiFeO3 . Adv. Mater. 18, 1445–1448 (2006).10.1002/adma.200502622 ↗
18. Gajek, M. et al. Tunnel junctions with multiferroic barriers. Nature Mater. 6, 296–302 (2007).10.1038/nmat1860 ↗
19. Bea, H. et al. Combining half-metals and multiferroics into epitaxial heterostructures for spintronics. Appl. Phys. Lett. 88, 062502 (2006).10.1063/1.2170432 ↗
20. Hill, N. A. Why are there so few magnetic ferroelectrics? J. Phys. Chem. B 104, 6694–6709 (2000).10.1021/jp000114x ↗
21. Cruz, M. P. et al. Strain control of domain-wall stability in epitaxial BiFeO3 (110) films. Phys. Rev. Lett. 99, 217601 (2007).10.1103/PhysRevLett.99.217601 ↗
22. Zavaliche, F. et al. Polarization switching in epitaxial BiFeO3 films. Appl. Phys. Lett. 87, 252902 (2005).10.1063/1.2149180 ↗
23. Shafer, P. et al. Planar electrode piezoelectric force microscopy to study electric polarization switching in BiFeO3 . Appl. Phys. Lett. 90, 202909 (2007).10.1063/1.2741046 ↗
24. Shu, Y. C., Yen, J. H., Chen, H. Z., Li, J. Y. & Li, L. J. Constrained modeling of domain patterns in rhombohedral ferroelectrics. Appl. Phys. Lett. 92, 052909 (2008).10.1063/1.2842385 ↗
25. Kubel, F. & Schmid, H. Structure of a ferroelectric and ferroelastic monodomain crystal of the perovskite BiFeO3 . Acta Cryst. B 46, 698–702 (1990).10.1107/S0108768190006887 ↗
26. Zavaliche, F. et al. Multiferroic BiFeO3 films: domain structure and polarization dynamics. Phase Transitions 79, 991–1017 (2006).10.1080/01411590601067144 ↗
27. Zavaliche, F. et al. Ferroelectric domain structure in epitaxial BiFeO3 films. Appl. Phys. Lett. 87, 182912 (2005).10.1063/1.2126804 ↗
28. Jesse, S., Lee, H. N. & Kalinin, S. V. Quantitative mapping of switching behavior in piezoresponse force microscopy. Rev. Sci. Instr. 77, 073702 (2006).10.1063/1.2214699 ↗
29. Kalinin, S. V. et al. Intrinsic single-domain switching in ferroelectric materials on a nearly ideal surface. Proc. Natl Acad. Sci. USA 104, 20204–20209 (2007).10.1073/pnas.0709316104 ↗
30. Molotskii, M. et al. Ferroelectric domain breakdown. Phys. Rev. Lett. 90, 107601 (2003).10.1103/PhysRevLett.90.107601 ↗
31. Landauer, R. Electrostatic considerations in BaTiO3 domain formation during polarization reversal. J. Appl. Phys. 28, 227–234 (1957).10.1063/1.1722712 ↗
32. Miller, R. & Weinreich, G. Mechanism for the sidewise motion of 180° domain walls in barium titanate. Phys. Rev. 117, 1460–1466 (1960).10.1103/PhysRev.117.1460 ↗
33. Naumov, I. I., Bellaiche, L. & Fu, H. Unusual phase transitions in ferroelectric nanodisks and nanorods. Nature 432, 737–740 (2004).10.1038/nature03107 ↗
34. Huijben, M. et al. Critical thickness and orbital ordering in ultrathin La0.7Sr0.3MnO3 films. Phys. Rev. B 78, 094413 (2008).10.1103/PhysRevB.78.094413 ↗
35. Martin, L. W. et al. Nanoscale control of exchange bias with BiFeO3 thin films. Nano Lett. 8, 2050–2055 (2008).10.1021/nl801391m ↗
36. Chen, L. Q. & Shen, J. Applications of semi-implicit Fourier-spectral method to phase field equations. Comput. Phys. Commun. 108, 147–158 (1998).10.1016/S0010-4655(97)00115-X ↗
37. Zhang, J. X. et al. Computer simulation of ferroelectric domain structures in epitaxial BiFeO3 thin films. J. Appl. Phys. 103, 094111 (2008).10.1063/1.2927385 ↗
38. Chen, Y. B. et al. Ferroelectric domain structures of epitaxial (001) BiFeO3 thin films. Appl. Phys. Lett. 90, 072907 (2007).10.1063/1.2472092 ↗