journal article·2017-01Open access

Direct observation of the layer-dependent electronic structure in phosphorene

Likai Li, Jonghwan Kim, Chenhao Jin, Guo Jun Ye, Diana Y. Qiu, Felipe H. da Jornada, Zhiwen Shi, Long Chen, Zuocheng Zhang, Fangyuan Yang, Kenji Watanabe, Takashi Taniguchi, Wencai Ren, Steven G. Louie, Xian Hui Chen, Yuanbo Zhang, Feng Wang

Nature Nanotechnology· Volume 12· Issue 1

Abstract

Phosphorene, a single atomic layer of black phosphorus, has recently emerged as a new two-dimensional (2D) material that holds promise for electronic and photonic technologies. Here we experimentally demonstrate that the electronic structure of few-layer phosphorene varies significantly with the number of layers, in good agreement with theoretical predictions. The interband optical transitions cover a wide, technologically important spectral range from the visible to the mid-infrared. In addition, we observe strong photoluminescence in few-layer phosphorene at energies that closely match the absorption edge, indicating that they are direct bandgap semiconductors. The strongly layer-dependent electronic structure of phosphorene, in combination with its high electrical mobility, gives it distinct advantages over other 2D materials in electronic and opto-electronic applications.
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Research context

OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Perovskite Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (31)

Show source-provided references
1. Li, L. et al. Black phosphorus field-effect transistors. Nat. Nanotech. 9, 372–377 (2014).10.1038/nnano.2014.35 ↗
2. Liu, H. et al. Phosphorene: an unexplored 2D semiconductor with a high hole mobility. ACS Nano 8, 4033–4041 (2014).10.1021/nn501226z ↗
3. Xia, F., Wang, H. & Jia, Y. Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics. Nat. Commun. 5, 4458 (2014).10.1038/ncomms5458 ↗
4. Koenig, S. P., Doganov, R. A., Schmidt, H., Neto, A. H. C. & Özyilmaz, B. Electric field effect in ultrathin black phosphorus. Appl. Phys. Lett. 104, 103106 (2014).10.1063/1.4868132 ↗
5. Castellanos-Gomez, A. et al. Isolation and characterization of few-layer black phosphorus. 2D Mater. 1, 025001 (2014).10.1088/2053-1583/1/2/025001 ↗
6. Watanabe, K., Taniguchi, T. & Kanda, H. Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal. Nat. Mater. 3, 404–409 (2004).10.1038/nmat1134 ↗
7. Novoselov, K. S. et al. Two-dimensional gas of massless Dirac fermions in graphene. Nature 438, 197–200 (2005).10.1038/nature04233 ↗
8. Zhang, Y., Tan, Y.-W., Stormer, H. L. & Kim, P. Experimental observation of the quantum Hall effect and Berry's phase in graphene. Nature 438, 201–204 (2005).10.1038/nature04235 ↗
9. Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).10.1103/PhysRevLett.105.136805 ↗
10. Hunt, B. et al. Massive Dirac fermions and Hofstadter butterfly in a van der Waals heterostructure. Science 340, 1427–1430 (2013).10.1126/science.1237240 ↗
11. Xu, X., Yao, W., Xiao, D. & Heinz, T. F. Spin and pseudospins in layered transition metal dichalcogenides. Nat. Phys. 10, 343–350 (2014).10.1038/nphys2942 ↗
12. Xi, X. et al. Strongly enhanced charge-density-wave order in monolayer NbSe2 . Nat. Nanotech. 10, 765–769 (2015).10.1038/nnano.2015.143 ↗
13. Dean, C. R. et al. Hofstadter's butterfly and the fractal quantum Hall effect in moire superlattices. Nature 497, 598–602 (2013).10.1038/nature12186 ↗
14. Churchill, H. O. H. & Jarillo-Herrero, P. Two-dimensional crystals: phosphorus joins the family. Nat. Nanotech. 9, 330–331 (2014).10.1038/nnano.2014.85 ↗
15. Sze, S. M. & Ng, K. K. Physics of Semiconductor Devices (John Wiley & Sons, 2006).10.1002/0470068329 ↗
16. Takao, Y. & Morita, A. Electronic structure of black phosphorus: tight binding approach. Phys. B+C 105, 93–98 (1981).10.1016/0378-4363(81)90222-9 ↗
17. Asahina, H., Shindo, K. & Morita, A. Electronic structure of black phosphorus in self-consistent pseudopotential approach. J. Phys. Soc. Jpn. 51, 1193–1199 (1982).10.1143/JPSJ.51.1193 ↗
18. Qiao, J., Kong, X., Hu, Z.-X., Yang, F. & Ji, W. High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus. Nat. Commun. 5, 4475 (2014).10.1038/ncomms5475 ↗
19. Tran, V., Soklaski, R., Liang, Y. & Yang, L. Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus. Phys. Rev. B 89, 235319 (2014).10.1103/PhysRevB.89.235319 ↗
20. Low, T. et al. Tunable optical properties of multilayer black phosphorus thin films. Phys. Rev. B 90, 075434 (2014).10.1103/PhysRevB.90.075434 ↗
21. Hultgren, R., Gingrich, N. S. & Warren, B. E. The atomic distribution in red and black phosphorus and the crystal structure of black phosphorus. J. Chem. Phys. 3, 351–355 (1935).10.1063/1.1749671 ↗
22. Zhang, S. et al. Extraordinary photoluminescence and strong temperature/angle-dependent Raman responses in few-layer phosphorene. ACS Nano 8, 9590–9596 (2014).10.1021/nn503893j ↗
23. Zhang, S. et al. Extraordinarily bound quasi-one-dimensional trions in two-dimensional phosphorene atomic semiconductors. Preprint at http://arxiv.org/abs/1411.6124 (2014).
24. Yang, J. et al. Optical tuning of exciton and trion emissions in monolayer phosphorene. Light Sci. Appl. 4, e312 (2015).10.1038/lsa.2015.85 ↗
25. Wang, X. et al. Highly anisotropic and robust excitons in monolayer black phosphorus. Nat. Nanotech. 10, 517–521 (2015).10.1038/nnano.2015.71 ↗
26. Kim, J. et al. Observation of tunable band gap and anisotropic Dirac semimetal state in black phosphorus. Science 349, 723–726 (2015).10.1126/science.aaa6486 ↗
27. Rodin, A. S., Carvalho, A. & Castro Neto, A. H. Strain-induced gap modification in black phosphorus. Phys. Rev. Lett. 112, 176801 (2014).10.1103/PhysRevLett.112.176801 ↗
28. Wang, L. et al. One-dimensional electrical contact to a two-dimensional material. Science 342, 614–617 (2013).10.1126/science.1244358 ↗
29. YU, P. & Cardona, M. Fundamentals of Semiconductors: Physics and Materials Properties (Springer, 2010).10.1007/978-3-642-00710-1 ↗
30. Yang, F., Wilkinson, M., Austin, E. J. & O'Donnell, K. P. Origin of the stokes shift: a geometrical model of exciton spectra in 2D semiconductors. Phys. Rev. Lett. 70, 323–326 (1993).10.1103/PhysRevLett.70.323 ↗
31. Polimeni, A. et al. Stokes shift in quantum wells: trapping versus thermalization. Phys. Rev. B 54, 16389–16392 (1996).10.1103/PhysRevB.54.16389 ↗