Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices
Source abstract
Abstract
Combining the electronic properties of graphene and molybdenum disulphide (MoS2) in hybrid heterostructures offers the possibility to create devices with various functionalities. Electronic logic and memory devices have already been constructed from graphene-MoS2 hybrids, but they do not make use of the photosensitivity of MoS2, which arises from its optical-range bandgap. Here, we demonstrate that graphene-on-MoS2 binary heterostructures display remarkable dual optoelectronic functionality, including highly sensitive photodetection and gate-tunable persistent photoconductivity. The responsivity of the hybrids was found to be nearly 1 × 10(10) A W(-1) at 130 K and 5 × 10(8) A W(-1) at room temperature, making them the most sensitive graphene-based photodetectors. When subjected to time-dependent photoillumination, the hybrids could also function as a rewritable optoelectronic switch or memory, where the persistent state shows almost no relaxation or decay within experimental timescales, indicating near-perfect charge retention. These effects can be quantitatively explained by gate-tunable charge exchange between the graphene and MoS2 layers, and may lead to new graphene-based optoelectronic devices that are naturally scalable for large-area applications at room temperature.
Source: europepmc · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: 2D Materials and Applications · Graphene research and applications · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (34)
Show source-provided references
1. Novoselov, K. S. et al. A roadmap for graphene. Nature 490, 192–200 (2012).10.1038/nature11458 ↗
2. Dean, C. et al. Boron nitride substrates for high-quality graphene electronics. Nature Nanotech. 5, 722–726 (2010).10.1038/nnano.2010.172 ↗
3. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nature Nanotech. 6, 147–150 (2011).10.1038/nnano.2010.279 ↗
4. Ghatak, S., Pal, A. N. & Ghosh, A. Nature of electronic states in atomically thin MoS2 field-effect transistors. ACS Nano 5, 7707–7712 (2011).10.1021/nn202852j ↗
5. Radisavljevic, B., Whitwick, M. B. & Kis, A. Integrated circuits and logic operations based on single-layer MoS2 . ACS Nano 5, 9934–9938 (2011).10.1021/nn203715c ↗
6. Late, D. J., Liu, B., Matte, H. S. S. R., Dravid, V. P. & Rao, C. N. R. Hysteresis in single-layer MoS2 field effect transistors. ACS Nano 6, 5635–5641 (2012).10.1021/nn301572c ↗
7. Bertolazzi, S., Krasnozhon, D. & Kis, A. Nonvolatile memory cells based on MoS2/graphene heterostructures. ACS Nano 7, 3246–3252 (2013).10.1021/nn3059136 ↗
8. Choi, M. S. et al. Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices. Nature Commun. 4, 1624 (2013).10.1038/ncomms2652 ↗
9. Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).10.1103/PhysRevLett.105.136805 ↗
10. Xu, X., Gabor, N. M., Alden, J. S., van der Zande, A. M. & McEuen, P. L. Photo-thermoelectric effect at a graphene interface junction. Nano Lett. 10, 562–566 (2010).10.1021/nl903451y ↗
11. Lemme, M. C. et al. Gate-activated photoresponse in a graphene p–n junction. Nano Lett. 11, 4134–4137 (2011).10.1021/nl2019068 ↗
12. Gabor, N. M. et al. Hot carrier-assisted intrinsic photoresponse in graphene. Science 334, 648–652 (2011).10.1126/science.1211384 ↗
13. Freitag, M., Low, T. & Avouris, P. Increased responsivity of suspended graphene photodetectors. Nano Lett. 13, 1644–1648 (2013).10.1021/nl4001037 ↗
14. Tielrooij, K. J. et al. Photoexcitation cascade and multiple hot-carrier generation in graphene. Nature Phys. 9, 248–252 (2013).10.1038/nphys2564 ↗
15. Biswas, C. et al. Negative and positive persistent photoconductance in graphene. Nano Lett. 11, 4682–4687 (2011).10.1021/nl202266h ↗
16. Mueller, T., Xia, F. & Avouris, P. Graphene photodetectors for high-speed optical communications. Nature Photon. 4, 297–301 (2010).10.1038/nphoton.2010.40 ↗
17. Freitag, M., Low, T., Xia, F. & Avouris, P. Photoconductivity of biased graphene. Nature Photon. 7, 53–59 (2013).10.1038/nphoton.2012.314 ↗
18. Echtermeyer, T. et al. Strong plasmonic enhancement of photovoltage in graphene. Nature Commun. 2, 458 (2011).10.1038/ncomms1464 ↗
19. Chitara, B., Panchakarla, L. S., Krupanidhi, S. B. & Rao, C. N. R. Infrared photodetectors based on reduced graphene oxide and graphene nanoribbons. Adv. Mater. 23, 5419–5424 (2011).10.1002/adma.201101414 ↗
20. Ghosh, S., Sarker, B. K., Chunder, A., Zhai, L. & Khondaker, S. I. Position dependent photodetector from large area reduced graphene oxide thin films. Appl. Phys. Lett. 96, 163109 (2010).10.1063/1.3415499 ↗
21. Kastalsky, A. & Hwang, J. Study of persistent photoconductivity effect in n-type selectively doped AlGaAs/GaAs heterojunction. Solid State Commun. 51, 317–322 (1984).10.1016/0038-1098(84)90696-3 ↗
22. Nathan, M. I. Persistent photoconductivity in AlGaAs/GaAs modulation doped layers and field effect transistors: a review. Solid State Electron. 29, 167–172 (1986).10.1016/0038-1101(86)90035-3 ↗
23. Queisser, H. J. & Theodorou, D. E. Decay kinetics of persistent photoconductivity in semiconductors. Phys. Rev. B 33, 4027–4033 (1986).10.1103/PhysRevB.33.4027 ↗
24. Dawlaty, J. M. et al. Measurement of the optical absorption spectra of epitaxial graphene from terahertz to visible. Appl. Phys. Lett. 93, 131905 (2008).10.1063/1.2990753 ↗
25. Nair, R. R. et al. Fine structure constant defines visual transparency of graphene. Science 320, 1308 (2008).10.1126/science.1156965 ↗
26. Konstantatos, G. et al. Hybrid graphene–quantum dot phototransistors with ultrahigh gain. Nature Nanotech. 7, 363–368 (2012).10.1038/nnano.2012.60 ↗
27. Kim, M., Safron, N. S., Huang, C., Arnold, M. S. & Gopalan, P. Light-driven reversible modulation of doping in graphene. Nano Lett. 12, 182–187 (2012).10.1021/nl2032734 ↗
28. Sachs, B. et al. Doping mechanisms in graphene–MoS2 hybrids. Preprint at http://arxiv.org/abs/1304.2236v1 (2013).10.1063/1.4852615 ↗
29. Britnell, L. et al. Strong light–matter interactions in heterostructures of atomically thin films. Science 340, 1311–1314 (2013).10.1126/science.1235547 ↗
30. Zomer, P. J., Dash, S. P., Tombros, N. & van Wees, B. J. A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride. Appl. Phys. Lett. 99, 232104 (2011).10.1063/1.3665405 ↗
31. Borghetti, J. et al. Optoelectronic switch and memory devices based on polymer-functionalized carbon nanotube transistors. Adv. Mater. 18, 2535–2540 (2006).10.1002/adma.200601138 ↗
32. Star, A., Lu, Y., Bradley, K. & Grüner, G. Nanotube optoelectronic memory devices. Nano Lett. 4, 1587–1591 (2004).10.1021/nl049337f ↗
33. Shi, Y. et al. Photoconductivity from carbon nanotube transistors activated by photosensitive polymers. J. Phys. Chem. C 112, 18201–18206 (2008).10.1021/jp805315x ↗
34. Dutta, S. & Narayan, K. Gate-voltage control of optically-induced charges and memory effects in polymer field-effect transistors. Adv. Mater. 16, 2151–2155 (2004).10.1002/adma.200400084 ↗