Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Source abstract
Abstract
The remarkable properties of graphene have renewed interest in inorganic, two-dimensional materials with unique electronic and optical attributes. Transition metal dichalcogenides (TMDCs) are layered materials with strong in-plane bonding and weak out-of-plane interactions enabling exfoliation into two-dimensional layers of single unit cell thickness. Although TMDCs have been studied for decades, recent advances in nanoscale materials characterization and device fabrication have opened up new opportunities for two-dimensional layers of thin TMDCs in nanoelectronics and optoelectronics. TMDCs such as MoS(2), MoSe(2), WS(2) and WSe(2) have sizable bandgaps that change from indirect to direct in single layers, allowing applications such as transistors, photodetectors and electroluminescent devices. We review the historical development of TMDCs, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
Source: europepmc · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: 2D Materials and Applications · Graphene research and applications · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (100+)
Show source-provided references
1. Novoselov, K. S. et al. Two-dimensional atomic crystals. Proc. Natl Acad. Sci. USA 102, 10451–10453 (2005).10.1073/pnas.0502848102 ↗
2. Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S. & Geim, A. K. The electronic properties of graphene. Rev. Mod. Phys. 81, 109–162 (2009).10.1103/RevModPhys.81.109 ↗
3. Geim, A. K. Graphene: status and prospects. Science 324, 1530–1534 (2009).10.1126/science.1158877 ↗
4. Balandin, A. A. et al. Superior thermal conductivity of single-layer graphene. Nano Lett. 8, 902–907 (2008).10.1021/nl0731872 ↗
5. Mayorov, A. S. et al. Micrometer-scale ballistic transport in encapsulated graphene at room temperature. Nano Lett. 11, 2396–2399 (2011).10.1021/nl200758b ↗
6. Bunch, J. S. et al. Impermeable atomic membranes from graphene sheets. Nano Lett. 8, 2458–2462 (2008).10.1021/nl801457b ↗
7. Nair, R. R., Wu, H. A., Jayaram, P. N., Grigorieva, I. V. & Geim, A. K. Unimpeded permeation of water through helium-leak-tight graphene-based membranes. Science 335, 442–444 (2012).10.1126/science.1211694 ↗
8. Mattheis, L. F. Band structures of transition-metal-dichalcogenide layer compounds. Phys. Rev. B 8, 3719–3740 (1973).10.1103/PhysRevB.8.3719 ↗
9. Wilson, J. A. & Yoffe, A. D. Transition metal dichalcogenides: discussion and interpretation of observed optical, electrical and structural properties. Adv. Phys. 18, 193–335 (1969).10.1080/00018736900101307 ↗
10. Osada, M. & Sasaki, T. Two-dimensional dielectric nanosheets: novel nanoelectronics from nanocrystal building blocks. Adv. Mater. 24, 210–228 (2012).10.1002/adma.201103241 ↗
11. Ayari, A., Cobas, E., Ogundadegbe, O. & Fuhrer, M. S. Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides. J. Appl. Phys. 101, 014507 (2007).10.1063/1.2407388 ↗
12. Dean, C. R. et al. Boron nitride substrates for high-quality graphene electronics. Nature Nanotech. 5, 722–726 (2010).10.1038/nnano.2010.172 ↗
13. Pacile, D., Meyer, J. C., Girit, C. O. & Zettl, A. The two-dimensional phase of boron nitride: few-atomic-layer sheets and suspended membranes. Appl. Phys. Lett. 92, (2008).10.1063/1.2903702 ↗
14. Yoffe, A. D. Layer compounds. Annu. Rev. Mater. Sci. 3, 147–170 (1993).10.1146/annurev.ms.03.080173.001051 ↗
15. Yoffe, A. D. Low-dimensional systems: quantum size effects and electronic properties of semiconductor microcrystallites (zero-dimensional systems) and some quasi-two-dimensional systems. Adv. Phys. 42, 173–266 (1993).10.1080/00018739300101484 ↗
16. Elias, D. C. et al. Dirac cones reshaped by interaction effects in suspended graphene. Nature Phys. 7, 701–704 (2011).10.1038/nphys2049 ↗
17. Lin, M-W. et al. Room-temperature high on/off ratio in suspended graphene nanoribbon field-effect transistors. Nanotechnology 22, 265201 (2011).10.1088/0957-4484/22/26/265201 ↗
18. Li, X., Wang, X., Zhang, L., Lee, S. & Dai, H. Chemically derived, ultrasmooth graphene nanoribbon semiconductors. Science 319, 1229–1232 (2008).10.1126/science.1150878 ↗
19. Han, M. Y., Özyilmaz, B., Zhang, Y. & Kim, P. Energy band-gap engineering of graphene nanoribbons. Phys. Rev. Lett. 98, 206805 (2007).10.1103/PhysRevLett.98.206805 ↗
20. Balog, R. et al. Bandgap opening in graphene induced by patterned hydrogen adsorption. Nature Mater. 9, 315–319 (2010).10.1038/nmat2710 ↗
21. Zhang, Y. et al. Direct observation of a widely tunable bandgap in bilayer graphene. Nature 459, 820–823 (2009).10.1038/nature08105 ↗
22. Sipos, B. et al. From Mott state to superconductivity in 1T-TaS2 . Nature Mater. 7, 960–965 (2008).10.1038/nmat2318 ↗
23. Wilson, J. A., Disalvo, F. J. & Mahajan, S. Charge-density waves and superlattices in metallic layered transition-metal dichalcogenides. Adv. Phys. 24, 117–201 (1975).10.1080/00018737500101391 ↗
24. Castro Neto, A. H. Charge density wave, superconductivity, and anomalous metallic behavior in 2D transition metal dichalcogenides. Phys. Rev. Lett. 86, 4382–4385 (2001).10.1103/PhysRevLett.86.4382 ↗
25. Kuc, A., Zibouche, N. & Heine, T. Influence of quantum confinement on the electronic structure of the transition metal sulfide TS2 . Phys. Rev. B 83, 245213 (2011).10.1103/PhysRevB.83.245213 ↗
26. Mak, K. F., He, K., Shan, J. & Heinz, T. F. Control of valley polarization in monolayer MoS2 by optical helicity. Nature Nanotech. 7, 494–498 (2012).10.1038/nnano.2012.96 ↗
27. Zeng, H., Dai, J., Yao, W., Xiao, D. & Cui, X. Valley polarization in MoS2 monolayers by optical pumping. Nature Nanotech. 7, 490–493 (2012).10.1038/nnano.2012.95 ↗
28. Cao, T. et al. Valley-selective circular dichroism of monolayer molybdenum disulphide. Nature Commun. 3, 887 (2012).10.1038/ncomms1882 ↗
29. Alem, N. et al. Atomically thin hexagonal boron nitride probed by ultrahigh-resolution transmission electron microscopy. Phys. Rev. B 80, 155425 (2009).10.1103/PhysRevB.80.155425 ↗
30. Lee, C. et al. Anomalous lattice vibrations of single- and few-layer MoS2 . ACS Nano 4, 2695–2700 (2010).10.1021/nn1003937 ↗
31. Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).10.1103/PhysRevLett.105.136805 ↗
32. Splendiani, A. et al. Emerging photoluminescence in monolayer MoS2 . Nano Lett. 10, 1271–1275 (2010).10.1021/nl903868w ↗
33. Bertolazzi, S., Brivio, J. & Kis, A. Stretching and breaking of ultrathin MoS2 . ACS Nano 5, 9703–9709 (2011).10.1021/nn203879f ↗
34. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nature Nanotech. 6, 147–150 (2011).10.1038/nnano.2010.279 ↗
35. Radisavljevic, B., Whitwick, M. B. & Kis, A. Integrated circuits and logic operations based on single-layer MoS2 . ACS Nano 5, 9934–9938 (2011).10.1021/nn203715c ↗
36. Benameur, M. M. et al. Visibility of dichalcogenide nanolayers. Nanotechnology 22, 125706 (2011).10.1088/0957-4484/22/12/125706 ↗
37. Li, H. et al. Optical identification of single- and few-layer MoS2 sheets. Small 8, 682–686 (2012).10.1002/smll.201101958 ↗
38. Kalantar-Zadeh, K. et al. Synthesis of atomically thin WO3 sheets from hydrated tungsten trioxide. Chem. Mater. 22, 5660–5666 (2010).10.1021/cm1019603 ↗
39. Yin, Z. et al. Single-layer MoS2 phototransistors. ACS Nano 6, 74–80 (2012).10.1021/nn2024557 ↗
40. Feng, J. et al. Giant moisture responsiveness of VS2 ultrathin nanosheets for novel touchless positioning interface. Adv. Mater. 24, 1969–1974 (2012).10.1002/adma.201104681 ↗
41. Zhang, Y., Ye, J., Matsuhashi, Y. & Iwasa, Y. Ambipolar MoS2 thin flake transistors. Nano Lett. 12, 1136–1140 (2012).10.1021/nl2021575 ↗
42. Castellanos-Gomez, A. et al. Laser-thinning of MoS2: on demand generation of a single-layer semiconductor. Nano Lett. 12, 3187–3192 (2012).10.1021/nl301164v ↗
43. Coleman, J. N. et al. Two-dimensional nanosheets produced by liquid exfoliation of layered materials. Science 331, 568–571 (2011).10.1126/science.1194975 ↗
44. Smith, R. J. et al. Large-scale exfoliation of inorganic layered compounds in aqueous surfactant solutions. Adv. Mater. 23, 3944–3948 (2011).10.1002/adma.201102584 ↗
45. Sire, C. d. et al. Flexible gigahertz transistors derived from solution-based single-layer graphene. Nano Lett. 12, 1184–1188 (2012).10.1021/nl203316r ↗
46. Bissessur, R., Heising, J. & Hirpo, W. Toward pillared layered metal sulfides. intercalation of the chalcogenide clusters Co6Q8(PR3)6 (Q = S, Se, and Te and R = Alkyl) into MoS2 . Chem. Mater. 8, 318–320 (1996).10.1021/cm950378+ ↗
47. Joensen, P., Frindt, R. F. & Morrison, S. R. Single-layer MoS2 . Mater. Res. Bull. 21, 457–461 (1986).10.1016/0025-5408(86)90011-5 ↗
48. Osada, M. & Sasaki, T. Exfoliated oxide nanosheets: new solution to nanoelectronics. J. Mater. Chem. 19, 2503–2511 (2009).10.1039/b820160a ↗
49. Eda, G. et al. Photoluminescence from chemically exfoliated MoS2 . Nano Lett. 11, 5111–5116 (2011).10.1021/nl201874w ↗
50. Zeng, Z. Y. et al. Single-layer semiconducting nanosheets: high-yield preparation and device fabrication. Angew. Chem. Int. Ed. 50, 11093–11097 (2011).10.1002/anie.201106004 ↗
51. Dines, M. B. Lithium intercalation via n-butyllithium of layered transition-metal dichalcogenides. Mater. Res. Bull. 10, 287–291 (1975).10.1016/0025-5408(75)90115-4 ↗
52. Tsai, H-L., Heising, J., Schindler, J. L., Kannewurf, C. R. & Kanatzidis, M. G. Exfoliated−restacked phase of WS2 . Chem. Mater. 9, 879–882 (1997).10.1021/cm960579t ↗
53. Frey, G. L., Reynolds, K. J., Friend, R. H., Cohen, H. & Feldman, Y. Solution-processed anodes from layer-structure materials for high-efficiency polymer light-emitting diodes. J. Am. Chem. Soc. 125, 5998–6007 (2003).10.1021/ja020913o ↗
54. Bissessur, R., Kanatzidis, M. G., Schindler, J. L. & Kannewurf, C. R. Encapsulation of polymers into MoS2 and metal to insulator transition in metastable MoS2 . J. Chem. Soc. Chem. Commun. 1582–1585 (1993).10.1039/c39930001582 ↗
55. Gordon, R. A., Yang, D., Crozier, E. D., Jiang, D. T. & Frindt, R. F. Structures of exfoliated single layers of WS2, MoS2, and MoSe2 in aqueous suspension. Phys. Rev. B 65, (2002).10.1103/PhysRevB.65.125407 ↗
56. Kirmayer, S., Aharon, E., Dovgolevsky, E., Kalina, M. & Frey, G. L. Self-assembled lamellar MoS2, SnS2 and SiO2 semiconducting polymer nanocomposites. Phil. Trans. R. Soc. A 365, 1489–1508 (2007).10.1098/rsta.2007.2028 ↗
57. Zeng, Z. et al. An effective method for the fabrication of few-layer-thick inorganic nanosheets. Angew. Chem. Int. Ed. 51, 9052–9056 (2012).10.1002/anie.201204208 ↗
58. Zhou, K-G., Mao, N-N., Wang, H-X., Peng, Y. & Zhang, H-L. A mixed-solvent strategy for efficient exfoliation of inorganic graphene analogues. Angew. Chem. Int. Ed. 50, 10839–10842 (2011).10.1002/anie.201105364 ↗
59. May, P., Khan, U., Hughes, J. M. & Coleman, J. N. Role of solubility parameters in understanding the steric stabilization of exfoliated two-dimensional nanosheets by adsorbed polymers. J. Phys. Chem. C 116, 11393–11400 (2012).10.1021/jp302365w ↗
60. Cunningham, G. et al. Solvent Exfoliation of transition metal dichalcogenides: dispersibility of exfoliated nanosheets varies only weakly between compounds. ACS Nano 6, 3468–3480 (2012).10.1021/nn300503e ↗
61. Díaz, E., Ordóñez, S. & Vega, A. Adsorption of volatile organic compounds onto carbon nanotubes, carbon nanofibers, and high-surface-area graphites. J. Colloid Interface Sci. 305, 7–16 (2007).10.1016/j.jcis.2006.09.036 ↗
62. Hernandez, Y. et al. High-yield production of graphene by liquid-phase exfoliation of graphite. Nature Nanotech. 3, 563–568 (2008).10.1038/nnano.2008.215 ↗
63. Shih, C-J. et al. Bi- and trilayer graphene solutions. Nature Nanotech. 6, 439–445 (2011).10.1038/nnano.2011.94 ↗
64. Green, A. A. & Hersam, M. C. Solution phase production of graphene with controlled thickness via density differentiation. Nano Lett. 9, 4031–4036 (2009).10.1021/nl902200b ↗
65. O'Neill, A., Khan, U. & Coleman, J. N. Preparation of high concentration dispersions of exfoliated MoS2 with increased flake size. Chem. Mater. 24, 2414–2421 (2012).10.1021/cm301515z ↗
66. Li, X. et al. Large-area synthesis of high-quality and uniform graphene films on copper foils. Science 324, 1312–1314 (2009).10.1126/science.1171245 ↗
67. Hass, J., de Heer, W. A. & Conrad, E. H. The growth and morphology of epitaxial multilayer graphene. J. Phys. Condens. Matter 20, (2008).10.1088/0953-8984/20/32/323202 ↗
68. Wu, Y. et al. State-of-the-art graphene high-frequency electronics. Nano Lett. 12, 3062–3067 (2012).10.1021/nl300904k ↗
69. Wu, Y. et al. High-frequency, scaled graphene transistors on diamond-like carbon. Nature 472, 74–78 (2011).10.1038/nature09979 ↗
70. Lin, Y-M. et al. Wafer-scale graphene integrated circuit. Science 332, 1294–1297 (2011).10.1126/science.1204428 ↗
71. Lee, Y-H. et al. Synthesis of large-area MoS2 atomic layers with chemical vapor deposition. Adv. Mater. 24, 2320–2325 (2012).10.1002/adma.201104798 ↗
72. Zhan, Y., Liu, Z., Najmaei, S., Ajayan, P. M. & Lou, J. Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate. Small 8, 966–971 (2012).10.1002/smll.201102654 ↗
73. Liu, K.-K. et al. Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates. Nano Lett. 12, 1538–1544 (2012).10.1021/nl2043612 ↗
74. Balendhran, S. et al. Atomically thin layers of MoS2 via a two step thermal evaporation-exfoliation method. Nanoscale 4, 461–466 (2012).10.1039/C1NR10803D ↗
75. Shi, Y. et al. Van der Waals epitaxy of MoS2 layers using graphene as growth templates. Nano Lett. 12, 2784–2791 (2012).10.1021/nl204562j ↗
76. Peng, Y. et al. Hydrothermal synthesis of MoS2 and its pressure-related crystallization. J. Solid State Chem. 159, 170–173 (2001).10.1006/jssc.2001.9146 ↗
77. Peng, Y. et al. Hydrothermal synthesis and characterization of single-molecular-layer MoS2 and MoSe2 . Chem. Lett. 30, 772–773 (2001).10.1246/cl.2001.772 ↗
78. Matte, H. S. S. et al. MoS2 and WS2 Analogues of graphene. Angew. Chem. Int. Ed. 49, 4059–4062 (2010).10.1002/anie.201000009 ↗
79. Matte, H. S. S. R., Plowman, B., Datta, R. & Rao, C. N. R. Graphene analogues of layered metal selenides. Dalton Trans. 40, 10322–10325 (2011).10.1039/c1dt10652j ↗
80. Kobayashi, K. & Yamauchi, J. Electronic structure and scanning-tunneling-microscopy image of molybdenum dichalcogenide surfaces. Phys. Rev. B 51, 17085–17095 (1995).10.1103/PhysRevB.51.17085 ↗
81. Li, T. & Galli, G. Electronic properties of MoS2 nanoparticles. J. Phys. Chem. C 111, 16192–16196 (2007).10.1021/jp075424v ↗
82. Liu, L., Kumar, S. B., Ouyang, Y. & Guo, J. Performance limits of monolayer transition metal dichalcogenide transistors. IEEE Trans. Electron Devices 58, 3042–3047 (2011).10.1109/TED.2011.2159221 ↗
83. Ding, Y. et al. First principles study of structural, vibrational and electronic properties of graphene-like MX2 (M=Mo, Nb, W, Ta; X=S, Se, Te) monolayers. Physica B 406, 2254–2260 (2011).10.1016/j.physb.2011.03.044 ↗
84. Ataca, C., Şahin, H. & Ciraci, S. Stable, single-layer MX2 transition-metal oxides and dichalcogenides in a honeycomb-like structure. J. Phys. Chem. C 116, 8983–8999 (2012).10.1021/jp212558p ↗
85. Lebègue, S. & Eriksson, O. Electronic structure of two-dimensional crystals from ab initio theory. Phys. Rev. B 79, 115409 (2009).10.1103/PhysRevB.79.115409 ↗
86. Frindt, R. F. The optical properties of single crystals of WSe2 and MoTe2 . J. Phys. Chem. Solids 24, 1107–1108 (1963).10.1016/0022-3697(63)90024-6 ↗
87. Frindt, R. F. & Yoffe, A. D. Physical properties of layer structures: optical properties and photoconductivity of thin crystals of molybdenum disulphide. Proc. R. Soc. Lond. A 273, 69–83 (1963).10.1098/rspa.1963.0075 ↗
88. Kam, K. K. & Parkinson, B. A. Detailed photocurrent spectroscopy of the semiconducting group-VI transition-metal dichalcogenides. J. Phys. Chem. 86, 463–467 (1982).10.1021/j100393a010 ↗
89. Bollinger, M. V. et al. One-dimensional metallic edge states in MoS2 . Phys. Rev. Lett. 87, 196803 (2001).10.1103/PhysRevLett.87.196803 ↗
90. Böker, T. et al. Band structure of MoS2, MoSe2, and α-MoTe2: angle-resolved photoelectron spectroscopy and ab initio calculations. Phys. Rev. B 64, 235305 (2001).10.1103/PhysRevB.64.235305 ↗
91. Schwierz, F. Graphene transistors. Nature Nanotech. 5, 487–496 (2010).10.1038/nnano.2010.89 ↗
92. The International Technology Roadmap for Semiconductors. http://www.itrs.net/Links/2011ITRS/Home2011.htm (Semiconductor Industry Association, 2011).
93. Sze, S. M. & Ng, K. K. Physics of Semiconductor Devices (Wiley, 2007).
94. Morkoc, H. et al. Large-band-gap SiC, III–V nitride, and II–VI ZnSe-based semiconductor device technologies. J. Appl. Phys. 76, 1363–1398 (1994).10.1063/1.358463 ↗
95. Avouris, P., Chen, Z. & Perebeinos, V. Carbon-based electronics. Nature Nanotech. 2, 605–615 (2007).10.1038/nnano.2007.300 ↗
96. Avouris, P., Freitag, M. & Perebeinos, V. Carbon-nanotube photonics and optoelectronics. Nature Photon. 2, 341–350 (2008).10.1038/nphoton.2008.94 ↗
97. Lu, W. & Lieber, C. M. Nanoelectronics from the bottom up. Nature Mater. 6, 841–850 (2007).10.1038/nmat2028 ↗
98. Yoon, Y., Ganapathi, K. & Salahuddin, S. How good can monolayer MoS2 transistors be? Nano Lett. 11, 3768–3773 (2011).10.1021/nl2018178 ↗
99. Colinge, J-P. Multiple-gate SOI MOSFETs. Solid State Electron. 48, 897–905 (2004).10.1016/j.sse.2003.12.020 ↗
100. Ando, T., Fowler, A. B. & Stern, F. Electronic properties of two-dimensional systems. Rev. Mod. Phys. 54, 437–672 (1982).10.1103/RevModPhys.54.437 ↗