Dual-Band Photoelectric Memristor Based on Zinc Oxide and Vanadium Oxide with Non-Volatile Optoelectronic Behavior

Integrating optical sensing and memory within a unitary semiconductor architecture is pivotal for circumventing the von Neumann bottleneck. Although conventional photonic memristors offer a promising solution, they are frequently constrained by a narrow spectral response and volatile memory. Herein, we report a ZnO/VO 2 memristor that combines multi-wavelength sensing with non-volatile resistive switching dual functions. The bandgap difference between ZnO (3.2 eV) and VO 2 (0.6 eV) endows the device with the ability to respond to ultraviolet (UV) and near-infrared (NIR) light. Ions in ZnO and VO 2 can be regulated and redistributed by an electric field. Photogenerated carriers can reinforce charge accumulation, forming conductive filaments, and the increment of filaments can be partially retained after light excitation, forming non-volatile resistance. Under a 1 V bias and dual-band (365 nm UV/760 nm NIR, each 0.01 mW/cm 2 ), the device achieves robust non-volatility (>2 h) and a switching ratio of ∼10 3, which is an order of magnitude superior to single-layer counterparts. This work offers a robust strategy for advancing the application of photoelectric memristors.