journal article·2026-07-22

Bilayer TeO 2 : The First Predicted Oxide Semiconductor with Symmetric Sub-5-nm NMOS and PMOS

Linqiang Xu, Liya Zhao, Chit Siong Lau, Pan Zhang, Lianqiang Xu, Jingwen Wang, Qiuhui Li, Shibo Fang, Yee Sin Ang, Xiaotian Sun, Jing Lu

ACS Applied Materials & Interfaces· Volume 18· Issue 28
Publisher page

Abstract

Wide-band-gap oxide semiconductors are very promising channel candidates for next-generation electronics due to their large-area manufacturing, high-quality dielectrics, low contact resistance, and low leakage current. However, the absence of ultrashort-gate-length ( L g ) p-type transistors has restricted their application in future complementary metal oxide semiconductor (CMOS) integration. Inspired by the successfully grown high-hole-mobility bilayer (BL) β-tellurium dioxide (β-TeO 2 ), we investigate the performance of sub-5-nm L g BL β-TeO 2 field-effect transistors (FETs) by utilizing first-principles quantum transport simulation. The distinctive anisotropy of BL β-TeO 2 yields different transport properties. In the y direction, both the sub-5-nm L g n-type and p-type BL β-TeO 2 FETs can fulfill the International Technology Roadmap for Semiconductors (ITRS) criteria for high-performance (HP) devices, which are superior to the reported oxide FETs (only n-type). Remarkably, we for the first time demonstrate the existence of the NMOS and PMOS symmetry in sub-5-nm L g oxide semiconductor FETs. As to the x direction, the n-type BL β-TeO 2 FETs satisfy both the ITRS HP and low-power (LP) requirements with L g down to 3 nm. Consequently, our work sheds light on the tremendous prospects of BL β-TeO 2 for CMOS applications.
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Research context

OpenAlex topics: Optical and Acousto-Optic Technologies · Advanced Materials and Semiconductor Technologies · Transition Metal Oxide Nanomaterials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Information Functional Material for Fujian Higher Education

Quanzhou Normal University

State Key Laboratory of Mesoscopic Physics and Department of Physics

Peking University

College of Chemistry and Chemical Engineering and Henan Key Laboratory of Function-Oriented Porous Materials

Luoyang Normal University

Quantum Innovation Centre (Q.InC), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore

Science, Mathematics and Technology, Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore 487372, Singapore

School of Physics and Electronic Information Engineering, Engineering Research Center of Nanostructure and Functional Materials

Ningxia Normal University

Collaborative Innovation Center of Quantum Matter

Beijing Key Laboratory for Magnetoelectric Materials and Devices

Peking University Yangtze Delta Institute of Optoelectronics

Key Laboratory for the Physics and Chemistry of Nanodevices

Funding

Singapore University of Technology and Design · Agency for Science, Technology and Research · Ministry of Science and Technology of the People's Republic of China · Natural Science Foundation of Fujian Province · Singapore Management University · National Research Foundation Singapore · Foundation of Henan Educational Committee · Natural Science Foundation of Ningxia Province · Science and Technology Department of Henan Province · China Scholarship Council · Fundamental Research Funds for the Central Universities · National Natural Science Foundation of China

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