journal article·2026-07-15

Machine Learning-Enabled In Situ Diagnostics for Intelligent Plasma-Based Semiconductor Manufacturing: A Review

Minji Kang, Seongho Kim, Eunseo Go, Sooji Byun, Donghyun Cho, Taeho Kim, Hongjae Kang, Jinhyoung Lee, Minkyung Ko, Nari Jeon, Min Sup Choi, Hyeong-U Kim

ACS Applied Materials & Interfaces· Volume 18· Issue 27
Publisher page

Abstract

Semiconductor device architectures are becoming more complex, and process tolerances are tightening; therefore, plasma-based manufacturing increasingly requires predictive and adaptive control beyond conventional experience-driven methodologies. Machine learning (ML) is a powerful tool in process intelligence that transforms high-dimensional plasma diagnostics into actionable insights for real-time decision making. This review examines recent progress in ML for intelligent diagnostics in plasma-based semiconductor manufacturing from two perspectives: equipment-based classification (plasma-enhanced chemical vapor deposition, reactive ion etching, and sputtering) and ML application-focused classification (anomaly detection, plasma diagnostics, and predictive maintenance). This dual framework highlights the transformative effects of these technologies on semiconductor plasma processing, including real-time data analysis, process optimization, and in situ diagnostics, which demonstrates the current state of advancement in the era of artificial intelligence (AI). Recent studies have shown that ML models can successfully capture nonlinear plasma behavior, enable virtual metrology (VM), early fault detection, and process optimization, and support noninvasive monitoring compatible with high-volume manufacturing environments. However, despite rapid progress, several barriers remain, including the limited availability of labeled data sets, difficulty of model interpretability, poor domain transferability, and persistent gap between laboratory validation and fab-scale deployment. This review highlights emerging strategies that can improve robustness and industrial readiness, such as physics-informed learning, multimodal sensor fusion, uncertainty-aware modeling, and explainable AI. Moreover, it establishes a technological roadmap for intelligent and autonomous plasma manufacturing.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Plasma Diagnostics and Applications · Laser-induced spectroscopy and plasma · Dust and Plasma Wave Phenomena

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Semiconductor Manufacturing Research Center

Korea Institute of Machinery & Materials (KIMM)

Department of Materials Science and Engineering

Chungnam National University (CNU)

Eco-Friendly & Energy Machines, KIMM Campus

University of Science & Technology (UST)

School of Mechanical Engineering

Sungkyunkwan University

Center for Quantum Nanoscience

Institute for Basic Science (IBS)

Nano-Mechatronics, KIMM Campus

Funding

Korea Institute of Machinery and Materials · National Research Foundation of Korea · Ministry of Trade, Industry and Energy · K-CHIPS(Korea Collaborative & High-tech Initiative for Prospective Semiconductor Research)

References (100+)

Show source-provided references
1. 10.1021/acsnano.7b0475210.1021/acsnano.7b04752 ↗
2. 10.1038/s41928-018-0150-910.1038/s41928-018-0150-9 ↗
3. 10.1002/adma.20210688610.1002/adma.202106886 ↗
4. 10.1002/aic.69035010210.1002/aic.690350102 ↗
5. 10.1088/0022-3727/47/30/30300110.1088/0022-3727/47/30/303001 ↗
6. 10.7567/JJAP.56.06HA0210.7567/JJAP.56.06HA02 ↗
7. Archard, D.; Giles, K.; Price, A.; Burgess, S.; Buchanan, K. In Low Temperature PECVD of Dielectric Films for TSV Applications , 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC); IEEE, 2010; pp 764–768.10.1109/ECTC.2010.5490746 ↗
8. 10.1002/adma.20150167810.1002/adma.201501678 ↗
9. 10.1002/eem2.1280010.1002/eem2.12800 ↗
10. 10.1021/acs.chemmater.2c0291410.1021/acs.chemmater.2c02914 ↗
11. 10.1063/1.347465210.1063/1.3474652 ↗
12. 10.1016/S0042-207X(99)00189-X10.1016/S0042-207X(99)00189-X ↗
13. 10.1147/rd.431.016310.1147/rd.431.0163 ↗
14. 10.1016/j.tsf.2004.05.07010.1016/j.tsf.2004.05.070 ↗
15. 10.1021/acsami.7b0823410.1021/acsami.7b08234 ↗
16. 10.1021/acs.jpclett.8b0099710.1021/acs.jpclett.8b00997 ↗
17. 10.1002/aelm.20230083510.1002/aelm.202300835 ↗
18. 10.1016/j.jprocont.2005.06.00210.1016/j.jprocont.2005.06.002 ↗
19. 10.1016/j.jprocont.2007.07.00510.1016/j.jprocont.2007.07.005 ↗
20. Gallaher M. · 2007
21. 10.3182/20070606-3-MX-2915.0004710.3182/20070606-3-MX-2915.00047 ↗
22. Levit, L. In Contamination Control in Semiconductor Manufacturing ; Proceedings of SEMICON Taiwan, Taipei, Taiwan, 1999; p 409.
23. 10.1016/j.rcim.2018.02.00310.1016/j.rcim.2018.02.003 ↗
24. 10.1063/1.32806010.1063/1.328060 ↗
25. 10.1116/1.491716810.1116/1.4917168 ↗
26. Boulos M. I. · 2023 · 96310.1007/978-3-030-84936-8_18 ↗
27. Ley, H.H. Analytical methods in plasma diagnostic by optical emission spectroscopy: A tutorial review J. Sci. Technol. 2014; Vol. 6 1.
28. 10.1557/mrs2005.24210.1557/mrs2005.242 ↗
29. 10.1116/1.353294910.1116/1.3532949 ↗
30. 10.1117/1.JMM.22.4.04150410.1117/1.JMM.22.4.041504 ↗
31. 10.1016/j.eswa.2024.12355910.1016/j.eswa.2024.123559 ↗
32. Chakroun, I.; Ashby, T. J.; Das, S.; Halder, S.; Wuyts, R.; Verachtert, W. In Using Unsupervised Machine Learning for Plasma Etching Endpoint Detection , Proceedings of the 9th International Conference on Pattern Recognition Applications and Methods (ICPRAM 2020; ICPRAM, 2020; pp 273–279.10.5220/0008877502730279 ↗
33. 10.1116/6.000373110.1116/6.0003731 ↗
34. 10.1116/6.000525510.1116/6.0005255 ↗
35. 10.1016/j.isatra.2020.03.03110.1016/j.isatra.2020.03.031 ↗
36. 10.3390/electronics1001004910.3390/electronics10010049 ↗
37. 10.3390/electronics1317357710.3390/electronics13173577 ↗
38. 10.1109/ACCESS.2025.353285310.1109/ACCESS.2025.3532853 ↗
39. 10.1116/6.000355410.1116/6.0003554 ↗
40. 10.1038/s41586-023-05773-710.1038/s41586-023-05773-7 ↗
41. 10.1063/1.153462810.1063/1.1534628 ↗
42. 10.1016/j.mee.2013.12.02210.1016/j.mee.2013.12.022 ↗
43. 10.1016/j.surfcoat.2017.11.01310.1016/j.surfcoat.2017.11.013 ↗
44. 10.1021/cr900056b10.1021/cr900056b ↗
45. 10.1116/1.367074510.1116/1.3670745 ↗
46. 10.1116/6.000328810.1116/6.0003288 ↗
47. 10.1109/TSM.2018.282431410.1109/TSM.2018.2824314 ↗
48. 10.1016/j.measen.2021.10004610.1016/j.measen.2021.100046 ↗
49. Yang, Y.P.; Lo, H.H.; Chen, W.L.; Wang, S.H.; Lu, T.Y.; Chang, H.E.; Wang, P. J.; Lai, W.; Fuh, Y.K.; Li, T. T. In Machine Learning Assisted In-Situ Sensing and Detection on System of PECVD Depositing Hydrogenated Silicon Films , 2021 China Semiconductor Technology International Conference (CSTIC); IEEE, 2021; pp 1–4.10.1109/CSTIC52283.2021.9461536 ↗
50. Sun, M.; Zhang, Z.; Zhou, Y.; Xia, Z.; Zhou, Z.; Zhang, L. In Convolution and Long Short-Term Memory Neural Network for PECVD Process Quality Prediction , 2021 Global Reliability and Prognostics and Health Management (PHM-Nanjing); IEEE, 2021; pp 1–5.10.1109/PHM-Nanjing52125.2021.9612756 ↗
51. Fu, Y.; Zhang, Z.; Xia, Z.; Wen, H.; Dai, M.; Zhang, H. In Quality Prediction of PECVD Process with Random Forest and Long Short-Term Memory Neural Network , 2023 29th International Conference on Mechatronics and Machine Vision in Practice (M2VIP); IEEE, 2023; pp 1–6.10.1109/M2VIP58386.2023.10413390 ↗
52. 10.3390/s2319822610.3390/s23198226 ↗
53. 10.1116/1.481931610.1116/1.4819316 ↗
54. 10.1063/1.32635510.1063/1.326355 ↗
55. Franssila S. · 2008 · 177210.1007/978-0-387-48998-8_1344 ↗
56. 10.1002/smtd.20240009010.1002/smtd.202400090 ↗
57. 10.1002/pssb.20240029010.1002/pssb.202400290 ↗
58. 10.1002/aisy.20250051710.1002/aisy.202500517 ↗
59. 10.1109/ACCESS.2024.344445410.1109/ACCESS.2024.3444454 ↗
60. 10.1021/acsaelm.3c0184610.1021/acsaelm.3c01846 ↗
61. 10.5757/ASCT.2023.32.5.10610.5757/ASCT.2023.32.5.106 ↗
62. Filipovic, L.; Reiter, T.; Piso, J.; Kostal, R. In Equipment-Informed Machine Learning-Assisted Feature-Scale Plasma Etching Model , 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD); IEEE, 2024; pp 1–4.10.1109/SISPAD62626.2024.10733099 ↗
63. 10.1109/TSM.2022.316151210.1109/TSM.2022.3161512 ↗
64. 10.1016/j.cis.2024.10320310.1016/j.cis.2024.103203 ↗
65. 10.1016/j.tsf.2007.10.03110.1016/j.tsf.2007.10.031 ↗
66. 10.1007/s00339-023-06945-y10.1007/s00339-023-06945-y ↗
67. 10.1088/0960-1317/17/5/02910.1088/0960-1317/17/5/029 ↗
68. 10.1016/j.vacuum.2009.12.01410.1016/j.vacuum.2009.12.014 ↗
69. 10.1116/1.499894010.1116/1.4998940 ↗
70. 10.1038/s41524-025-01805-010.1038/s41524-025-01805-0 ↗
71. 10.1016/j.surfcoat.2007.06.04310.1016/j.surfcoat.2007.06.043 ↗
72. 10.1002/adfm.20242548710.1002/adfm.202425487 ↗
73. 10.1002/advs.20230358910.1002/advs.202303589 ↗
74. 10.1038/s43246-024-00487-310.1038/s43246-024-00487-3 ↗
75. 10.3390/nano1413115310.3390/nano14131153 ↗
76. 10.1109/TSM.2021.313256210.1109/TSM.2021.3132562 ↗
77. 10.1016/j.tsf.2023.13990310.1016/j.tsf.2023.139903 ↗
78. 10.1088/2058-6272/ad709c10.1088/2058-6272/ad709c ↗
79. May G. S. · 200610.1002/0471790281 ↗
80. 10.1109/5.14944510.1109/5.149445 ↗
81. 10.1109/TSM.2016.257413010.1109/TSM.2016.2574130 ↗
82. 10.1149/1.162377210.1149/1.1623772 ↗
83. 10.15255/CABEQ.2021.197310.15255/CABEQ.2021.1973 ↗
84. 10.5573/JSTS.2013.13.4.39510.5573/JSTS.2013.13.4.395 ↗
85. 10.1109/64.19305410.1109/64.193054 ↗
86. 10.1016/j.chip.2022.10003310.1016/j.chip.2022.100033 ↗
87. 10.1116/1.157084110.1116/1.1570841 ↗
88. 10.3390/electronics1102025310.3390/electronics11020253 ↗
89. 10.1109/JSYST.2019.290556510.1109/JSYST.2019.2905565 ↗
90. 10.1109/TIE.2014.230177310.1109/TIE.2014.2301773 ↗
91. 10.1214/aos/101320345110.1214/aos/1013203451 ↗
92. Caruana, R.; Lou, Y.; Gehrke, J. In Intelligible Models for Classification and Regression , Proc. 23rd ACM SIGKDD Conference, Beijing, China; Citeseer, 2012.
93. 10.1088/1361-6463/ad233910.1088/1361-6463/ad2339 ↗
94. 10.1016/j.engappai.2024.10962410.1016/j.engappai.2024.109624 ↗
95. 10.1088/0741-3335/44/12/70110.1088/0741-3335/44/12/701 ↗
96. Huddlestone, R. H.; Leonard, S. L.; Furth, H. P. Plasma diagnostic techniques Phys. Today 1966; Vol. 19 10.1063/1.3048484.10.1063/1.3048484 ↗
97. Chabert P. · 201110.1017/CBO9780511974342 ↗
98. 10.1063/1.136887410.1063/1.1368874 ↗
99. 10.6028/jres.100.03110.6028/jres.100.031 ↗
100. 10.1063/1.471969910.1063/1.4719699 ↗