Self-Powered, Broadband, and Polarization-Sensitive Photodetector Based on the ReSe 2 /Ta 2 NiSe 5 van der Waals Heterojunction
Source abstract
Abstract
Photodetectors that simultaneously integrate high responsivity, fast response, self-powered operation, and polarization sensitivity are highly needed for advanced imaging and optical information processing, yet remain challenging to realize in a simple device architecture. Here, the in-plane anisotropic ReSe 2 and narrow-bandgap Ta 2 NiSe 5 are utilized to construct a ReSe 2 /Ta 2 NiSe 5 van der Waals heterojunction photodetector with self-powered broadband operation from 375 to 850 nm. Under 532 nm illumination in the self-powered mode, the device exhibits a responsivity of 0.381 A W –1 and a specific detectivity of 5.71 × 10 9 Jones. The device also presents a fast temporal response with rise and fall times of 44 and 70 μs, respectively, as well as a −3 dB bandwidth of approximately 5 kHz, demonstrating excellent weak light and high-speed detection capability. Moreover, under zero bias, the device exhibits photocurrent polarization ratios of 1.56 and 1.83 for the vertically stacked and laterally stacked configurations, respectively, indicating a clear polarization-sensitive photoresponse. Benefiting from these features, the device further enables real-time polarization-resolved imaging of specific patterns and reliable optoelectronic signal recognition. This work establishes a simple and effective strategy for the development of miniaturized, low-power, broadband photodetectors with intrinsic polarization sensitivity based on 2D van der Waals heterostructures.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Advanced Sensor and Energy Harvesting Materials · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering
Nanjing University of Science and Technology
School of Microelectronics and Integrated Circuits
Nantong University
GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province
Nanjing University of Posts and Telecommunications
MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Department of Applied Physics
Funding
National Natural Science Foundation of China
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