Antiambipolar Devices Based on 2D Tellurium with Surface Selenium Dopants for Multivalued Logic

As the conventional binary CMOS technology approaches its fundamental limits in device scaling and energy efficiency, multivalued logic (MVL) has emerged as a promising strategy to enhance information density and computational capability. Two-dimensional tellurium (Te), owing to its outstanding hole transport properties, provides an attractive material platform for advanced logic devices. In this work, surface selenium-doped tellurium thin films (Te x Se 1– x ) are employed as a key functional layer, exhibiting gate-tunable, p-type-dominated ambipolar transport behavior. By integrating Te x Se 1– x with n-type two-dimensional semiconductors, heterojunction devices with pronounced antiambipolar transport characteristics are constructed, establishing a solid foundation for novel logic functionalities. Based on these heterostructures, two representative logic device demonstrations are realized: (i) a binary inverter based on a Te x Se 1– x /MoS 2 heterojunction, exhibiting a characteristic Λ-shaped voltage transfer curve; and (ii) a stable ternary inverter implemented in a Te x Se 1– x /MoSe 2 device, showing a distinct W-shaped transfer characteristic with a logic-state switching ratio approaching 10 4 . These results highlight the significant potential of tellurium-based heterostructures for scalable binary and multivalued logic devices, offering a viable platform for next-generation MVL circuits.