journal article·2026-04-08

Addressing the Optical–Electrical Trade-Off via Rear Polished TOPCon Structures for Efficient Perovskite/Silicon Tandem Solar Cells

Xuefeng Hu, Haojiang Du, Xin Li, Huan Li, Yu Liang, Zetao Ding, Weichuang Yang, Shengjie Guan, Huan Pu, Mengyuan Tian, Jiaxiao Deng, Yixiao Song, Shaojian Fu, Xiaoqiang Li, Yuanyuan Zhang, Zhiqin Ying, Xi Yang, Zhenhai Yang, Shihua Huang, Yuheng Zeng, Jichun Ye

ACS Applied Materials & Interfaces· Volume 18· Issue 13
Publisher page

Abstract

Perovskite/silicon tandem solar cells (TSCs) based on tunnel oxide passivating contact (TOPCon) bottom cells are among the most promising pathways toward commercialization, yet their performance is constrained by inadequate passivation in the p -type region of the bottom cell. In this work, we replace the conventional textured rear surface with an alkaline-polished surface, producing a p -type TOPCon structure with substantially enhanced passivation, which yields a high open-circuit voltage of 727 mV in the bottom cell (implied open-circuit voltage ( iV oc ) of the TOPCon precursor is 737 mV). This electrical gain, combined with optical compensation provided by a rear SiN x /Ag reflector, enables the resulting perovskite/TOPCon tandem solar cell to achieve an outstanding open-circuit voltage of 1.964 V and a notable power conversion efficiency of 32.14%.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Perovskite Materials and Applications · Silicon and Solar Cell Technologies · TiO2 Photocatalysis and Solar Cells

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Solid State Optoelectronic Devices of Zhejiang Province, College of Physics and Electronic Information Engineering

Zhejiang Normal University

Ningbo Institute of Materials Technology and Engineering

Chinese Academy of Sciences (CAS)

School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology; Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China

Soochow University

Chuzhou Jietai New Energy Technology Co., Ltd.

Hangzhou Kinpa New Energy Technologies Co., Ltd.

Changzhou Shichuang Energy Co.,Ltd.

Funding

China Postdoctoral Science Foundation · Youth Innovation Promotion Association of the Chinese Academy of Sciences · Key Research and Development Program of Zhejiang Province · National Natural Science Foundation of China · Anhui Provincial Key Research and Development Plan · Chinese Academy of Sciences · Natural Science Foundation of Zhejiang Province · Ningbo ?Innovation 2035? Major Project · Ningbo International science and Technology Cooperation Program

References (20)

Show source-provided references
1. NREL Best Research-Cell Efficiency Chart. https://www.nrel.gov/pv/cell-efficiency.html (accessed: January 2026).
2. 10.1002/aenm.20220300610.1002/aenm.202203006 ↗
3. 10.1126/science.adz369810.1126/science.adz3698 ↗
4. 10.1002/adma.20251825110.1002/adma.202518251 ↗
5. 10.1021/acsenergylett.6b0040510.1021/acsenergylett.6b00405 ↗
6. 10.1038/s41560-021-00816-710.1038/s41560-021-00816-7 ↗
7. CPIA, China PV Industry Development Roadmap. https://www.chinapv.org.cn/Industry/resource_1405.html (accessed: February 2025).
8. 10.1038/s41467-024-52309-210.1038/s41467-024-52309-2 ↗
9. 10.1002/aenm.20220082110.1002/aenm.202200821 ↗
10. 10.1002/adfm.20240190010.1002/adfm.202401900 ↗
11. 10.1021/acsenergylett.4c0159410.1021/acsenergylett.4c01594 ↗
12. 10.1002/smll.20250434610.1002/smll.202504346 ↗
13. 10.1016/j.cej.2025.16348710.1016/j.cej.2025.163487 ↗
14. Dauwe, S.; Schmidt, J.; Meh, A.; Hezel, R. Fixed Charge Density in Silicon Nitride Films on Crystalline Silicon Surfaces Under Illumination ; IEEE: New Or-leans, LA, USA, 2002; p 162.10.1109/PVSC.2002.1190481 ↗
15. 10.1016/j.solener.2022.07.00310.1016/j.solener.2022.07.003 ↗
16. 10.1016/j.solener.2023.05.02810.1016/j.solener.2023.05.028 ↗
17. 10.1063/1.489182410.1063/1.4891824 ↗
18. 10.1038/s41586-023-06667-410.1038/s41586-023-06667-4 ↗
19. 10.1016/j.solmat.2021.11149310.1016/j.solmat.2021.111493 ↗
20. 10.1002/pip.7000210.1002/pip.70002 ↗