journal article·2026-03-04

Electrically Tunable WSe 2 /α-In 2 Se 3 van der Waals Ferroelectric Heterostructure for Reconfigurable Photodetection and Neuromorphic Computing

Han Chen, Yufeng Ning, Yukang Chen, Jinjian Yan, Jiaxin Chen, Liang Liu, Yinfeng Long, Shiyu Zhang, Kai Liu, Mingfeng Chen, Jinxiu Zhao, Mengwei Si, Xinwei Zhang, Yishu Zhang, Du Xiang, Lin Wang

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Abstract

The growing demand for compact and energy-efficient hardware in artificial intelligence and edge computing calls for multifunctional electronic systems beyond conventional architectures. van der Waals (vdW) ferroelectric semiconductors, which couple switchable polarization with tunable carrier transport, offer a promising avenue for reconfigurable electronics. Here, we demonstrate a WSe 2 /α-In 2 Se 3 vdW heterostructure that enables dynamic and nonvolatile reconfiguration of electrical functionality within a single device. Through bias-mediated control of ferroelectric polarization and the associated interfacial carrier redistribution, the heterostructure exhibits dual-mode operation: as a high-performance photodetector with a detectivity exceeding 10 12 Jones and as a nonvolatile memory element. Furthermore, the device emulates biological synaptic plasticity, supporting the implementation of artificial neural networks (ANNs) that achieve 96.76% recognition accuracy on the MNIST data set. This work establishes a versatile and electrically reconfigurable platform based on vdW ferroelectric heterojunctions, enabling dual-mode operation for photodetection and neuromorphic computing.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Advanced Sensor and Energy Harvesting Materials · Ferroelectric and Negative Capacitance Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Mechanical Engineering

Shanghai Jiao Tong University

State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System

Fudan University

School of Microelectronics

Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics

Xiamen University

Tsung-Dao Lee Institute, Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy

Department of Electronic Engineering

College of Integrated Circuits

Zhejiang University

ZJU-Hangzhou Global Scientific and Technological Innovation Center

Zhangjiang Fudan International Innovation Center

Funding

National Basic Research Program of China (973 Program) · National Natural Science Foundation of China (NSFC)

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