Source abstract
Abstract
Dielectric capacitors featuring high energy density and excellent temperature stability are vital to the miniaturization and reliability of high-power electronic systems. Antiferroelectrics (AFEs) exhibit high polarization through field-induced phase transition. However, their antiferroelectric-ferroelectric phase transition electric field ( E AFE-FE ) usually exceeds the dielectric breakdown strength, severely restricting their practical energy storage capability. To address this issue, we propose an antiferroelectric/relaxor ferroelectric composite strategy that effectively reduces the E AFE-FE by tuning the phase transition energy barrier, thereby facilitating field-induced polarization switching. The Pb 0.94 La 0.04 (Zr 0.84 Sn 0.15 Ti 0.01 )O 3 /2 wt % 0.8Ba(Zr 0.1 Ti 0.9 )O 3 -0.2 Bi(Zn 2/3 Ta 1/3 )O 3 (PLZST/2BZT) composite ceramics exhibit a high recoverable energy storage density ( W rec ) of 9.3 J cm –3 and an energy storage efficiency (η) of 85% when subjected to a breakdown electric field of 325 kV cm –1 . This remarkable performance is owing to the reduced phase transition energy barrier and the enhanced interfacial polarization, which collectively strengthen polarization response. Notably, the PLZST/2BZT ceramics also exhibit exceptional temperature stability, maintaining W rec above 6.5 J cm –3 and η invariably surpassing 81% over a broad temperature range of −20 to 140 °C under a 320 kV cm –1 electric field. These results highlight the effectiveness of the AFE/relaxor ferroelectric composite strategy for achieving high-performance dielectric ceramics, providing valuable insights into the design of high-performance capacitors for advanced dielectric materials and high-power electronic devices.
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Affiliations
School of Integrated Circuits, Wuhan National Laboratory for Optoelectronics, and National Innovation Platform for the Integration Between Industry & Education in Integrated Circuits, Engineering Research Center for Functional Ceramics, Ministry of Education
Huazhong University of Science and Technology
Research Institute for Advanced Manufacturing, Department of Industrial and Systems Engineering
The Hong Kong Polytechnic University
The Hong Kong Polytechnic University Shenzhen Research Institute
The 13th Research Institute, CETC
Key Lab of Functional Materials for Electronic Information (B), Ministry of Education
Funding
Research Grants Council, University Grants Committee · Wuhan Municipal Science and Technology Bureau · Natural Science Foundation of Hubei Province · Fundamental Research Funds for the Central Universities · Hong Kong Polytechnic University · Wuhan National Laboratory for Optoelectronics · National Basic Research Program of China (973 Program) · National Natural Science Foundation of China (NSFC)