Polarity Engineering in a Single MoTe ₂ Device for Homogeneous Complementary Circuit Applications

Two-dimensional (2D) materials offer unique opportunities for advanced electronic applications owing to their atomic thickness and immunity to short-channel effects. However, achieving precise n- and p-type polarity engineering within a single 2D channel poses significant challenges for complementary circuit integration. In this work, we demonstrate a polarity engineering strategy for MoTe 2 using poly(methyl methacrylate) (PMMA)-assisted molecular adsorption for p-type doping and focused electron beam irradiation for n-type doping. This approach allows for the development of MoTe 2 p- and n-FETs with a single flake, achieving ON-currents exceeding 2 μA at V DS = 1 V, subthreshold swings (SS) less than 451.3 mV/dec, field-effect mobilities (μ FE ) above 1.3 cm 2 V –1 s –1, and ON/OFF current ratios above 10 4 for both polarities. Furthermore, we demonstrate the feasibility of homogeneous complementary circuit applications, with inverters exhibiting a high voltage gain of ∼48, as well as NAND/NOR gates, and full-wave rectifiers, highlighting the potential of our polarity engineering strategy. Moreover, as a proof-of-concept, we introduce reversible polarity conversion through controlled doping processes, enabling circuit function switching within a single MoTe 2 device. Our polarity engineering opens up possibilities for advanced and versatile applications of 2D semiconductor-based devices.