Reducing Nonradiative Recombination Losses in Tin-Based Perovskite LEDs Utilizing a Self-Assembled Monolayer

Sergio Galve-Lahoz; Jesús Sánchez-Diaz; Ece Aktas; Jhonatan Rodriguez-Pereira; Antonio Abate; Juan Luis Delgado; Iván Mora-Seró

doi:10.1021/acsami.5c15797

journal article·2025-11-05Open access

Reducing Nonradiative Recombination Losses in Tin-Based Perovskite LEDs Utilizing a Self-Assembled Monolayer

Sergio Galve-Lahoz, Jesús Sánchez-Diaz, Ece Aktas, Jhonatan Rodriguez-Pereira, Antonio Abate, Juan Luis Delgado, Iván Mora-Seró

ACS Applied Materials & Interfaces· Volume 17· Issue 44

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Source abstract

Abstract

Tin-based perovskites are emerging as less-toxic alternatives to their lead-based counterparts for optoelectronic devices, such as solar cells and light-emitting diodes (LEDs). However, despite their great potential, the efficiency of pure red tin-based perovskite LEDs (Sn-LEDs) still lags behind that of lead-based perovskite LEDs (Pb-LEDs), partly due to the poor electron blocking at the PEDOT:PSS/perovskite interface. This leads to detrimental nonradiative recombination pathways that limit the performance of the LEDs. In this study, we replaced the conventional PEDOT:PSS layer with the self-assembled monolayer (SAM) EADR03, presenting, to the best of our knowledge, the first report of a SAM employed as a hole-selective layer in Sn-LEDs. EADR03 simultaneously acted as an efficient electron-blocking and hole-injecting layer, thereby reducing interfacial recombination losses and enhancing the LEDs' performance. As a result, we achieved a 3-fold enhancement in external quantum efficiency, propelling the advancement of more efficient tin-based perovskite LEDs.

Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: Perovskite Materials and Applications · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Advanced Materials (INAM), University Jaume I, Av. Vicent Sos Baynat, S/N, Castellón de la Plana 12071, Spain

Polymat, University of the Basque Country UPV/EHU

Department of Chemical, Materials and Production Engineering, University of Naples Federico II, Piazzale Via Tecchio 80, Fuorigrotta, Napoli 80125, Italy

Center of Materials and Nanotechnologies, Faculty of Chemical Technology, University of Pardubice, nám. Cs. legií 565, Pardubice 53002, Czech Republic

Central European Institute of Technology, Brno University of Technology, Purkynova 123, Brno 612 00, Czech Republic

Ikerbasque, Basque Foundation for Science

Funding

Ministerstvo ?kolstv?, Ml?de?e a Telov?chovy · Ikerbasque, Basque Foundation for Science · Agencia Nacional de Promoci?n Cient?fica y Tecnol?gica · Ikerbasque Research Associate · Polymat Foundation

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