Gate-Programmable Ozone Adsorption Gradients for Reconfigurable and Low-Power Palladium Diselenide Electronics

Reconfigurable two-dimensional (2D) devices have garnered significant attention for next-generation electronics due to their adaptive functionality and structural advantages, yet achieving nondestructive, programmable reconfiguration in simple 2D transistors remains challenging. We introduce a gate-controlled graded ozone (O 3 ) strategy to dynamically reconfigure palladium diselenide (PdSe 2 ) devices. Systematic characterization confirms the nondestructive nature of O 3 adsorption while enabling controllable hole doping via surface charge transfer modulation. This graded doping profile facilitates programmable logic inverters and artificial synapses. Our PdSe 2 -based complementary inverters achieve ultralow voltage operation at 0.05 V, while the artificial synapses exhibit metaplasticity at an ultralow energy consumption of 0.35 fJ per synaptic event. This O 3 -mediated reconfiguration approach offers a versatile platform for multifunctional 2D electronics and adaptive neuromorphic computing.