Exceptional Hydrogen Uptake in Crystalline In_{x}Ga_{1–x}N Semiconductors

Gianluca Ciatto; Francesco Filippone; Antonio Polimeni; Giorgio Pettinari

doi:10.1021/acsami.4c01371

journal article·2024-05-29

Exceptional Hydrogen Uptake in Crystalline In_xGa_1–xN Semiconductors

Gianluca Ciatto, Francesco Filippone, Antonio Polimeni, Giorgio Pettinari

ACS Applied Materials & Interfaces· Volume 16· Issue 21

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Source abstract

Abstract

N samples with low-energy H ions results in exceptionally high hydrogen uptake in a crystalline semiconductor. This phenomenon is attributed to specific In-H complex formation. By exploiting spectral fingerprints of the In-H complexes observable in In L3-edge X-ray absorption spectroscopy, we provide direct evidence of complex formation. Density functional theory calculations assist in interpreting the X-ray absorption spectra and offer insights into the energetics of complex formation. We quantify the total amount of reversibly incorporated hydrogen in these semiconductors and discuss their strengths and weaknesses as innovative materials for hydrogen storage.

Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: GaN-based semiconductor devices and materials · Hydrogen Storage and Materials · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Synchrotron SOLEIL, L’Orme des Merisiers, Saint-Aubin, BP48, 91192 Gif-sur-Yvette Cedex, France

National Research Council, Istituto di Struttura della Materia (ISM-CNR). Via Salaria Km 29.5, 00016 Monterotondo Stazione, Italy

Physics Department, Sapienza University of Rome. P.le A. Moro 2, 00185 Roma, Italy

National Research Council, Institute for Photonics and Nanotechnologies (IFN-CNR), Via del Fosso del Cavaliere 100, 00133 Roma, Italy

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