Current Enhancement and Bipolar Current Modulation of Top-Gate Transistors Based on Monolayer MoS2 on Three-Layer WxMo1–xS2
Source abstract
Abstract
We demonstrated the top-gate transistors composed of monolayer MoS2 grown on three-layer alloys Mo xW1- xS2 prepared by sequential sulfurization of predeposited transition metal films. The elemental mapping of the alloy indicates a uniform distribution of both cations Mo and W in the grown samples. Surprisingly, we find that the drain current of transistors could be enhanced by 2 orders of magnitude as the composition of Mo increases, whereas the gate-controlled current modulation turns bipolar and ultimately vanishes. These features might originate from the formation of in-gap defect states, with modest activation energy for transport and moderate hopping probability for current conduction, or a reduced electronic band gap of the conducting channel because of strain.
Source: europepmc · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: 2D Materials and Applications · Advanced Memory and Neural Computing · MXene and MAX Phase Materials
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Affiliations
Graduate Institute of Electronics Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Rd, Taipei 10617, Taiwan
Research Center for Applied Sciences, Academia Sinica, No. 128, Sec. 2, Academia Rd, Taipei 11529, Taiwan
Department of Materials Science and Engineering, National Dong Hwa University, No. 1, Sec. 2, Da Hsueh Rd, Shoufeng, Hualien 97401, Taiwan
Department of Photonics, National Chiao Tung University, 1001 University Rd, Hsinchu 30010, Taiwan
Funding
Academia Sinica · Ministry of Science and Technology, Taiwan
References (19)
Show source-provided references
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