The Effect of Nonideal Polar Monolayers on Molecular Gated Transistors

Nonideal polar monolayers can induce a field-effect in molecular gated transistors. To quantify the magnitude of this phenomenon, we have calculated the effect of roughness and noncontinuity of such layers on the operation of hybrid silicon-on-insulator field-effect transistors. The results show that under most practical conditions, the nonideality of polar monolayers induces very small electric fields in the underlying transistor channel, and consequently a negligible gating effect.