Influence of the Chalcogen Element on the Filament Stability in CuIn(Te,Se,S)2/Al2O3Filamentary Switching Devices
Source abstract
Abstract
In this paper, we report on the use of CuInX2 (X = Te, Se, S) as a cation supply layer in filamentary switching applications. Being used as absorber layers in solar cells, we take advantage of the reported Cu ionic conductivity of these materials to investigate the effect of the chalcogen element on filament stability. In situ X-ray diffraction showed material stability attractive for back-end-of-line in semiconductor industry. When integrated in 580 μm diameter memory cells, more volatile switching was found at low compliance current using CuInS2 and CuInSe2 compared to CuInTe2, which is ascribed to the natural tendency for Cu to diffuse back from the switching layer to the cation supply layer because of the larger difference in electrochemical potential using Se or S. Low-current and scaled behavior was also confirmed using conductive atomic force microscopy. Hence, by varying the chalcogen element, a method is presented to modulate the filament stability.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Solid State Sciences, Ghent University, Krijgslaan 281 (S1), 9000 Ghent, Belgium
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Funding
Universiteit Gent · Fonds Wetenschappelijk Onderzoek · Herculesstichting, Vlaamse Overheid
References (49)
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