journal article·2024-04-10

Magnetic Phase Transition-Induced Modulation of Ferroelectric Properties in Hexagonal RFeO3 (R = Tb and Ho)

Yaoming Liu, Binjie Chen, Yosuke Hamasaki, Lizhikun Gong, Hiromichi Ohta, Tsukasa Katayama

ACS Applied Materials & Interfaces· Volume 16· Issue 14
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Abstract

Hexagonal rare-earth iron oxides ( h-R FeO 3 ) exhibit spontaneous magnetization and room-temperature ferroelectricity simultaneously. However, achieving a large magnetoelectric coupling necessitates further exploration. Herein, we report the impact of the magnetic phase transition on the ferroelectric properties of epitaxial h-R FeO 3 ( R = Tb and Ho) films prepared by pulsed laser deposition. The metastable h - R FeO 3 phase is successfully stabilized with high crystallinity and low leakage current due to the ITO buffer layer, making it possible to investigate the ferroelectric properties. The h -TbFeO 3 film exhibits a magnetic-field-induced transition from antiferromagnetic (AFM) to weak ferromagnetic (wFM) phases below 30 K, while also exhibiting ferroelectricity at 300 K. The dielectric constants change with the magnetic phase transition, demonstrating hysteresis in the magnetocapacitance. In contrast, the h -HoFeO 3 film exhibits antiferroelectric-like behavior and an AFM – wFM phase transition. Notably, the h -HoFeO 3 film shows a rapid increase in the remnant polarization during the AFM–wFM phase transition accompanied by an increase in the ferroelectric component. Considering the strong connection between the antiferroelectric behavior in the h-R FeO 3 system and the ferroelectric domain wall motion, this considerable modification of ferroelectric properties during the magnetic phase transition is probably due to the faster movement of the ferroelectric domain walls in the wFM phase induced by the clamping effect. Our findings indicate the effectiveness of magnetic phase transitions in enhancing the magnetoelectric coupling, particularly when utilizing domain wall clamping properties.
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Research context

OpenAlex topics: Multiferroics and related materials · Ferroelectric and Piezoelectric Materials · Advanced Condensed Matter Physics

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Graduate School of Information Science and Technology, Hokkaido University, N14W9, Kita, Sapporo 060-0814, Japan

Department of Applied Physics, National Defense Academy, Yokosuka 239-8686, Japan

Research Institute for Electronic Science, Hokkaido University, N20W10, Kita, Sapporo 001-0020, Japan

JST-PRESTO, Kawaguchi, Saitama 332-0012, Japan

Funding

Precursory Research for Embryonic Science and Technology · Japan Society for the Promotion of Science

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