journal article·2024-01-10

Determining the Electron Scattering from Interfacial Coulomb Scatterers in Two-Dimensional Transistors

Yi-Te Lee, Yu-Ting Huang, Shao-Pin Chiu, Ruey-Tay Wang, Takashi Taniguchi, Kenji Watanabe, Raman Sankar, Chi-Te Liang, Wei-Hua Wang, Sheng-Shiuan Yeh, Juhn-Jong Lin

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Abstract

Two-dimensional (2D) transistors are promising for potential applications in next-generation semiconductor chips. Owing to the atomically thin thickness of 2D materials, the carrier scattering from interfacial Coulomb scatterers greatly suppresses the carrier mobility and hampers transistor performance. However, a feasible method to quantitatively determine relevant Coulomb scattering parameters from interfacial long-range scatterers is largely lacking. Here, we demonstrate a method to determine the Coulomb scattering strength and the density of Coulomb scattering centers in InSe transistors by comprehensively analyzing the low-frequency noise and transport characteristics. Moreover, the relative contributions from long-range and short-range scattering in the InSe transistors can be distinguished. This method is employed to make InSe transistors consisting of various interfaces a model system, revealing the profound effects of different scattering sources on transport characteristics and low-frequency noise. Quantitatively accessing the scattering parameters of 2D transistors provides valuable insight into engineering the interfaces of a wide spectrum of ultrathin-body transistors for high-performance electronics.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Nanowire Synthesis and Applications · 2D Materials and Applications · Advancements in Semiconductor Devices and Circuit Design

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan

Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan

Department of Physics, National Taiwan University, Taipei 106, Taiwan

Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

Institute of Physics, Academia Sinica, Taipei 106, Taiwan

Center for Emergent Functional Matter Science, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan

International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan

Funding

Academia Sinica · Japan Society for the Promotion of Science · National Science and Technology Council · Ministry of Education, Taiwan · World Premier International Research Center Initiative

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