journal article·2020-07-15

Polar Rectification Effect in Electro-Fatigued SrTiO3-Based Junctions

Xueli Xu, Hui Zhang, Zhicheng Zhong, Ranran Zhang, Lihua Yin, Yuping Sun, Haoliang Huang, Yalin Lu, Yi Lu, Chun Zhou, Zongwei Ma, Lei Shen, Junsong Wang, Jiandong Guo, Jirong Sun, Zhigao Sheng

ACS Applied Materials & Interfaces· Volume 12· Issue 28
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Abstract

Rectifying semiconductor junctions are crucial to electronic devices. They convert alternating current into a direct one by allowing unidirectional charge flows. Analogous to the current-flow rectification for itinerary electrons, here, a polar rectification that is based on the localized oxygen vacancies (OVs) in a Ti/fatigued-SrTiO3 (fSTO) Schottky junction is first demonstrated. The fSTO with OVs is produced by an electrodegradation process. The different movabilities of localized OVs and itinerary electrons in the fSTO yield a unidirectional electric polarization at the interface of the junction under the coaction of external and built-in electric fields. Moreover, the fSTO displays a pre-ferroelectric state located between paraelectric and ferroelectric phases. The pre-ferroelectric state has three sub-states and can be easily driven into a ferroelectric state by an external electric field. These observations open up opportunities for potential polar devices and may underpin many useful polar-triggered electronic phenomena.
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Research context

OpenAlex topics: Electronic and Structural Properties of Oxides · Ferroelectric and Piezoelectric Materials · Ferroelectric and Negative Capacitance Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Science, Hefei 230031, China

University of Science and Technology of China, Hefei, Anhui 230026, China

Key Laboratory of Photovoltaic and Energy Conservation Materials, Institute of Applied Technology, Chinese Academy of Sciences, Hefei 230031, China

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Fert Beijing Institute, School of Microelectronics, Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing 100191, China

Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China

Anhui Laboratory of Advanced Photon Science and Technology, National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, P. R. China

Institute for Theoretical Physics, Heidelberg University, Philosophenweg 19, 69120 Heidelberg, Germany

Funding

Ministry of Education of the People's Republic of China · Ministry of Science and Technology of the People's Republic of China · Hefei Center for Physical Science and Technology · National Natural Science Foundation of China · Chinese Academy of Sciences · Central Committee of the Communist Party of China

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