journal article·2014-11-26Open access

Investigation of Embedded Perovskite Nanoparticles for Enhanced Capacitor Permittivities

Andreas Krause, Walter M. Weber, Darius Pohl, Bernd Rellinghaus, Marcel Verheijen, Thomas Mikolajick

Abstract

Growth experiments show significant differences in the crystallization of ultrathin CaTiO3 layers on polycrystalline Pt surfaces. While the deposition of ultrathin layers below crystallization temperature inhibits the full layer crystallization, local epitaxial growth of CaTiO3 crystals on top of specific oriented Pt crystals occurs. The result is a formation of crystals embedded in an amorphous matrix. An epitaxial alignment of the cubic CaTiO3 ⟨111⟩ direction on top of the underlying Pt {111} surface has been observed. A reduced forming energy is attributed to an interplay of surface energies at the {111} interface of both materials and CaTiO3 nanocrystallites facets. The preferential texturing of CaTiO3 layers on top of Pt has been used in the preparation of ultrathin metal-insulator-metal capacitors with 5-30 nm oxide thickness. The effective CaTiO3 permittivity in the capacitor stack increases to 55 compared to capacitors with amorphous layers and a permittivity of 28. The isolated CaTiO3 crystals exhibit a passivation of the CaTiO3 grain surfaces by the surrounding amorphous matrix, which keeps the capacitor leakage current at ideally low values comparable for those of amorphous thin film capacitors.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Ferroelectric and Piezoelectric Materials · Perovskite Materials and Applications · Dielectric properties of ceramics

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

NaMLab gGmbH, Noethnitzer Strasse 64, 01187 Dresden, Germany

Institute for Metallic Materials, Leibniz Institute for Solid State and Materials Research (IFW) Dresden, P.O. Box 270116, 01171 Dresden, Germany

Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands

Institute of Semiconductors and Microsystems, Dresden University of Technology, 01062 Dresden, Germany

Funding

Freistaat Sachsen · European Regional Development Fund

References (57)

Show source-provided references
1. Barrett J. H. · Phys. Rev. · 1952 · 86 · 11810.1103/PhysRev.86.118 ↗
2. Waser R. · Integr. Ferroelectr. · 1997 · 15 · 3910.1080/10584589708015695 ↗
3. Ono K. · Tech. Dig. - Int. Electron Devices Meet. · 1998 · 803
4. Wallace R. M. · Crit. Rev. Solid State Mater. Sci. · 2003 · 28 · 23110.1080/714037708 ↗
5. Damjanovic D. · J. Mater. Sci. · 2006 · 41 · 6510.1007/s10853-005-5925-5 ↗
6. Callori S. J. · Phys. Rev. Lett. · 2012 · 109 · 06760110.1103/PhysRevLett.109.067601 ↗
7. Kentgens A. P. M. · J. Cryst. Growth · 1988 · 91 · 35510.1016/0022-0248(88)90251-5 ↗
8. Bhalla A. S. · Mater. Res. Innovations · 2000 · 4 · 310.1007/s100190000062 ↗
9. Wolfram T. · 200610.1017/CBO9780511541292 ↗
10. Tokura Y. · Science · 2000 · 288 · 46210.1126/science.288.5465.462 ↗
11. McCormack M. · Appl. Phys. Lett. · 1994 · 64 · 304510.1063/1.111372 ↗
12. Reagor D. W. · Nat. Mater. · 2005 · 4 · 59310.1038/nmat1402 ↗
13. Xu G. · Adv. Mater. · 2005 · 17 · 90710.1002/adma.200400998 ↗
14. Joshi U. A. · Small · 2005 · 1 · 117210.1002/smll.200500055 ↗
15. Vasseur S. · J. Magn. Magn. Mater. · 2006 · 302 · 31510.1016/j.jmmm.2005.09.026 ↗
16. Mao Y. · Adv. Mater. · 2005 · 17 · 219410.1002/adma.200500437 ↗
17. Goncalves-Ferreira L. · Phys. Rev. Lett. · 2008 · 101 · 09760210.1103/PhysRevLett.101.097602 ↗
18. Van Aert S. · Adv. Mater. · 2012 · 24 · 52310.1002/adma.201103717 ↗
19. Vlahos E. · APS Meeting Abstracts · 2011 · 22004
20. Krause A. · Appl. Phys. Lett. · 2011 · 99 · 22290510.1063/1.3664395 ↗
21. Abe K. · Jpn. J. Appl. Phys., Part 1 · 1992 · 31 · 298510.1143/JJAP.31.2985 ↗
22. Son J. · Appl. Phys. Express · 2008 · 1 · 06160310.1143/APEX.1.061603 ↗
23. Adachi M. · 2002 · 36 · 1
24. Lee J.-S. · Solid-State Electron. · 2002 · 46 · 165110.1016/S0038-1101(02)00120-X ↗
25. McKenna K. · Microelectron. Eng. · 2011 · 88 · 127210.1016/j.mee.2011.03.024 ↗
26. Jeon W. · Electrochem. Solid-State Lett. · 2008 · 11 · H1910.1149/1.2813881 ↗
27. Krause A. · J. Vac. Sci. Technol. B · 2011 · 29 · 01AC0710.1116/1.3521507 ↗
28. Weinreich W. · J. Vac. Sci. Technol. A · 2013 · 31 · 01A11910.1116/1.4765047 ↗
29. Aarik J. · Thin Solid Films · 2002 · 408 · 9710.1016/S0040-6090(02)00123-2 ↗
30. Zacharias M. · Appl. Phys. Lett. · 1999 · 74 · 261410.1063/1.123914 ↗
31. Wei X. · Jpn. J. Appl. Phys. · 2007 · 46 · 221110.1143/JJAP.46.2211 ↗
32. AMCSD Database entry #0011157 for fcc Pt (Fm3m).
33. Yamanaka T. · Am. Mineral. · 2002 · 87 · 118310.2138/am-2002-8-917 ↗
34. Asthagiri A. · Surf. Sci. · 2003 · 537 · 13410.1016/S0039-6028(03)00609-5 ↗
35. Asthagiri A. · Surf. Sci. · 2005 · 581 · 6610.1016/j.susc.2005.02.033 ↗
36. Muralt P. · J. Appl. Phys. · 1998 · 83 · 383510.1063/1.366614 ↗
37. Lüth H.. · 201010.1007/978-3-642-13592-7 ↗
38. Ohring M. · 2002 · 9510.1016/B978-012524975-1/50006-9 ↗
39. Albe K. · Phys. Rev. B: Condens. Matter Mater. Phys. · 2002 · 65 · 19512410.1103/PhysRevB.65.195124 ↗
40. Dannenberg A. · Phys. Rev. B: Condens. Matter Mater. Phys. · 2009 · 80 · 24543810.1103/PhysRevB.80.245438 ↗
41. Lyon H. B. · J. Chem. Phys. · 1967 · 46 · 253910.1063/1.1841082 ↗
42. Harp G. R. · J. Cryst. Growth · 1993 · 127 · 62710.1016/0022-0248(93)90698-V ↗
43. Eglitis R. I. · Phys. Rev. B: Condens. Matter Mater. Phys. · 2008 · 78 · 15542010.1103/PhysRevB.78.155420 ↗
44. Eglitis R. I. · Ferroelectrics · 2011 · 424 · 110.1080/00150193.2011.623620 ↗
45. Zhang J.-M. · Phys. Rev. B: Condens. Matter Mater. Phys. · 2007 · 76 · 11542610.1103/PhysRevB.76.115426 ↗
46. Wang Y. X. · Phys. Rev. B: Condens. Matter Mater. Phys. · 2006 · 73 · 03541110.1103/PhysRevB.73.035411 ↗
47. Liu W. · Solid State Commun. · 2009 · 149 · 187110.1016/j.ssc.2009.08.006 ↗
48. Eglitis R. I. · J. Phys.: Condens. Matter · 2010 · 22 · 415901
49. Schmidt V. · Nano Lett. · 2005 · 5 · 93110.1021/nl050462g ↗
50. Dawber M. · J. Phys.: Condens. Matter · 2003 · 15 · L667
51. Vasco E. · Appl. Phys. Lett. · 2003 · 82 · 249710.1063/1.1566798 ↗
52. Muralt P. · J. Appl. Phys. · 2006 · 100 · 05160510.1063/1.2337362 ↗
53. Martin D. · Appl. Phys. Lett. · 2009 · 95 · 14290610.1063/1.3243987 ↗
54. Bierwagen O. · Appl. Phys. Lett. · 2007 · 90 · 23290110.1063/1.2746058 ↗
55. Heitmann J. · Adv. Mater. · 2005 · 17 · 79510.1002/adma.200401126 ↗
56. Zacharias M. · Phys. Rev. B: Condens. Matter Mater. Phys. · 2000 · 62 · 839110.1103/PhysRevB.62.8391 ↗
57. Spinella C. · J. Appl. Phys. · 1998 · 84 · 538310.1063/1.368873 ↗