journal article·2020-09-23

Facile and Reversible Carrier-Type Manipulation of Layered MoTe2 Toward Long-Term Stable Electronics

Mengjiao Li, Che-Yi Lin, Yuan-Ming Chang, Shih-Hsien Yang, Mu-Pai Lee, Ciao-Fen Chen, Ko-Chun Lee, Feng-Shou Yang, Yi Chou, Yi-Chun Lin, Keiji Ueno, Yumeng Shi, Yi-Chia Chou, Kazuhito Tsukagoshi, Yen-Fu Lin

ACS Applied Materials & Interfaces· Volume 12· Issue 38
Publisher page

Abstract

Flexible manipulation of the carrier transport behaviors in two-dimensional materials determines their values of practical application in logic circuits. Here, we demonstrated the carrier-type manipulation in field-effect transistors (FETs) containing α-phase molybdenum ditelluride (MoTe2) by a rapid thermal annealing (RTA) process in dry air for hole-dominated and electron-beam (EB) treatment for electron-dominated FETs. EB treatment induced a distinct shift of the transfer curve by around 135 V compared with that of the FET-processed RTA treatment, indicating that the carrier density of the EB-treated FET was enhanced by about 1 order of magnitude. X-ray photoelectron spectroscopy analysis revealed that the atomic ratio of Te decreased from 66.4 to 60.8% in the MoTe2 channel after EB treatment. The Fermi level is pinned near the new energy level resulting from the Te vacancies produced by the EB process, leading to the electron-dominant effect of the MoTe2 FET. The electron-dominated MoTe2 FET showed excellent stability for more than 700 days. Thus, we not only realized the reversible modulation of carrier-type in layered MoTe2 FETs but also demonstrated MoTe2 channels with desirable performance, including long-term stability.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Advanced Thermoelectric Materials and Devices · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan

International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of the Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China

Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan

Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan

Department of Electrical Engineering and Institute of Electronic Engineering, National Tsing Hua University, Hsinchu 30010, Taiwan

Instrument Center, National Chung Hsing University, Taichung 40227, Taiwan

Department of Chemistry, Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan

Engineering Technology Research Center for 2D Material Information Functional Devices and Systems of Guangdong Province, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China

WPI Center for Materials Nanoarchitechtonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan

Institute of Nanoscience and Research Center for Sustainable Energy and Nanotechnology, National Chung Hsing University, Taichung 40227, Taiwan

Funding

Ministry of Science and Technology, Taiwan

References (31)

Show source-provided references
1. 10.1002/smll.20180370610.1002/smll.201803706 ↗
2. 10.1038/s41598-019-56576-810.1038/s41598-019-56576-8 ↗
3. 10.1088/1361-6528/aaf76510.1088/1361-6528/aaf765 ↗
4. 10.1002/advs.20190138210.1002/advs.201901382 ↗
5. 10.1016/j.nanoen.2019.10428010.1016/j.nanoen.2019.104280 ↗
6. 10.1039/C9NR09309E10.1039/C9NR09309E ↗
7. 10.1016/j.nanoen.2019.10410710.1016/j.nanoen.2019.104107 ↗
8. 10.1002/adfm.20180901110.1002/adfm.201809011 ↗
9. 10.1002/advs.20200021610.1002/advs.202000216 ↗
10. 10.1002/adma.20150267710.1002/adma.201502677 ↗
11. 10.1002/adma.20130584510.1002/adma.201305845 ↗
12. 10.7567/JJAP.55.1102A110.7567/JJAP.55.1102A1 ↗
13. 10.1002/adma.20170699510.1002/adma.201706995 ↗
14. 10.1021/acsami.9b1503610.1021/acsami.9b15036 ↗
15. 10.1002/adma.20180369010.1002/adma.201803690 ↗
16. 10.1002/adfm.20180911910.1002/adfm.201809119 ↗
17. 10.1088/2053-1583/4/1/01503310.1088/2053-1583/4/1/015033 ↗
18. 10.1039/C7NR07890K10.1039/C7NR07890K ↗
19. 10.1038/s41598-017-18067-610.1038/s41598-017-18067-6 ↗
20. 10.1088/2053-1583/2/4/04401010.1088/2053-1583/2/4/044010 ↗
21. 10.1063/1.504473310.1063/1.5044733 ↗
22. 10.1002/adma.20160643310.1002/adma.201606433 ↗
23. 10.1039/C8NH00150B10.1039/C8NH00150B ↗
24. 10.1038/s41928-018-0129-610.1038/s41928-018-0129-6 ↗
25. 10.1002/adfm.20170453910.1002/adfm.201704539 ↗
26. 10.1088/0957-4484/27/44/44520110.1088/0957-4484/27/44/445201 ↗
27. 10.1126/sciadv.aav343010.1126/sciadv.aav3430 ↗
28. 10.1002/adma.20170179810.1002/adma.201701798 ↗
29. 10.1021/acsami.5b0855910.1021/acsami.5b08559 ↗
30. 10.1002/adma.20160643310.1002/adma.201606433 ↗
31. 10.1021/acsami.8b1100310.1021/acsami.8b11003 ↗