Based on Silicon-Gel Polymer Electrolyte Dielectric of Low Impedance Tribovoltaic Nanogenerator
Source abstract
Abstract
As an innovative renewable energy harvester, the tribovoltaic nanogenerator (TVNG) with lower impedance and DC characteristics has attracted much attention. To alleviate the issues of severe wear for hard-hard semiconductor materials, here, a soft ion dielectric material and semiconductor TVNG based on n-Si/gel polymer electrolyte (GPE) (GPE-TVNG) is proposed. A solid ionic electric double layer (i-EDL) model is established to systematically explore the generation mechanism as well. Moreover, the proposed i-EDL model is verified by subsequent experiments, and the results manifest that the ion directed migration can improve the output performance of GPE-TVNG. The optimized GPE-TVNG has a short-circuit current of 26.5 μA and a low matched impedance of 60 kΩ, which is far lower than the previous reported internal resistance of Si-based TVNG (>100 kΩ). This study broadens the selection of TVNG materials and realizes the effective control of TVNG output.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Sensor and Energy Harvesting Materials · Conducting polymers and applications · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Chongqing Key Laboratory of Materials Physics, Department of Applied Physics, Analytical and Testing Center
Chongqing University
School of Science
Chongqing University of Posts and Telecommunications
College of Physics and Electronic Engineering
Chongqing Normal University
Funding
National Key Research and Development Program of China · Natural Science Foundation of Chongqing Municipality · Fundamental Research Funds for the Central Universities · National Natural Science Foundation of China
References (42)
Show source-provided references
1. 10.1002/aenm.20190371310.1002/aenm.201903713 ↗
2. 10.1002/aenm.20230117810.1002/aenm.202301178 ↗
3. 10.1021/acsenergylett.1c0028810.1021/acsenergylett.1c00288 ↗
4. 10.1039/D3EE01408H10.1039/D3EE01408H ↗
5. 10.1016/j.apenergy.2023.12237510.1016/j.apenergy.2023.122375 ↗
6. 10.1002/aenm.20230057110.1002/aenm.202300571 ↗
7. 10.1002/admt.20220124610.1002/admt.202201246 ↗
8. 10.1016/j.nanoen.2023.10904610.1016/j.nanoen.2023.109046 ↗
9. 10.1039/D2EE02762C10.1039/D2EE02762C ↗
10. 10.1002/aenm.20230007910.1002/aenm.202300079 ↗
11. 10.1002/adfm.20210313210.1002/adfm.202103132 ↗
12. 10.1007/s40820-023-01198-z10.1007/s40820-023-01198-z ↗
13. 10.1002/aenm.20230308010.1002/aenm.202303080 ↗
14. 10.1039/D4EE02797C10.1039/D4EE02797C ↗
15. 10.1002/adma.20220014610.1002/adma.202200146 ↗
16. 10.1039/D2EE00180B10.1039/D2EE00180B ↗
17. 10.1002/aenm.20220055010.1002/aenm.202200550 ↗
18. 10.1021/acsnano.3c1108710.1021/acsnano.3c11087 ↗
19. 10.1016/j.cej.2023.14357210.1016/j.cej.2023.143572 ↗
20. 10.1007/BF0062596010.1007/BF00625960 ↗
21. 10.1016/j.jpowsour.2005.05.01810.1016/j.jpowsour.2005.05.018 ↗
22. 10.1007/BF0237555410.1007/BF02375554 ↗
23. 10.1016/j.electacta.2014.04.07610.1016/j.electacta.2014.04.076 ↗
24. Neamen D. A. · 2012
25. 10.1016/j.mattod.2022.11.00510.1016/j.mattod.2022.11.005 ↗
26. 10.1002/adma.20160705410.1002/adma.201607054 ↗
27. 10.1021/cr940408c10.1021/cr940408c ↗
28. 10.1038/s43588-021-00041-y10.1038/s43588-021-00041-y ↗
29. 10.1039/D4EE00395K10.1039/D4EE00395K ↗
30. 10.1002/anie.20070181210.1002/anie.200701812 ↗
31. 10.1016/j.matt.2022.02.02110.1016/j.matt.2022.02.021 ↗
32. 10.1039/D3MH01369C10.1039/D3MH01369C ↗
33. 10.1016/j.ssi.2004.11.00710.1016/j.ssi.2004.11.007 ↗
34. 10.1021/acs.cgd.0c0004210.1021/acs.cgd.0c00042 ↗
35. 10.1038/s41467-022-34429-910.1038/s41467-022-34429-9 ↗
36. 10.1016/j.nanoen.2024.10991810.1016/j.nanoen.2024.109918 ↗
37. 10.34133/2019/583238210.34133/2019/5832382 ↗
38. 10.1039/D3TA04807A10.1039/D3TA04807A ↗
39. 10.1002/aenm.20230420610.1002/aenm.202304206 ↗
40. 10.1016/j.nanoen.2022.10737010.1016/j.nanoen.2022.107370 ↗
41. 10.1021/acs.nanolett.1c0392210.1021/acs.nanolett.1c03922 ↗
42. 10.1021/acsanm.3c0486910.1021/acsanm.3c04869 ↗