journal article·2022-09-14

Diffused Beam Energy to Dope van der Waals Electronics and Boost Their Contact Barrier Lowering

Che-Yi Lin, Mu-Pai Lee, Yuan-Ming Chang, Yi-Tang Tseng, Feng-Shou Yang, Mengjiao Li, Jiann-Yeu Chen, Ciao-Fen Chen, Meng-Yu Tsai, Yi-Chun Lin, Keiji Ueno, Mahito Yamamoto, Shun-Tsung Lo, Chen-Hsin Lien, Po-Wen Chiu, Kazuhito Tsukagoshi, Wen-Wei Wu, Yen-Fu Lin

ACS Applied Materials & Interfaces· Volume 14· Issue 36
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Abstract

Contact engineering of two-dimensional semiconductors is a central issue for performance improvement of micro-/nanodevices based on these materials. Unfortunately, the various methods proposed to improve the Schottky barrier height normally require the use of high temperatures, chemical dopants, or complex processes. This work demonstrates that diffused electron beam energy (DEBE) treatment can simultaneously reduce the Schottky barrier height and enable the direct writing of electrical circuitry on van der Waals semiconductors. The electron beam energy projected into the region outside the electrode diffuses into the main channel, producing selective-area n-type doping in a layered MoTe2 (or MoS2) field-effect transistor. As a result, the Schottky barrier height at the interface between the electrode and the DEBE-treated MoTe2 channel is as low as 12 meV. Additionally, because selective-area doping is possible, DEBE can allow the formation of both n- and p-type doped channels within the same atomic plane, which enables the creation of a nonvolatile and homogeneous MoTe2 p–n rectifier with an ideality factor of 1.1 and a rectification ratio of 1.3 × 103. These results indicate that the DEBE method is a simple, efficient, mask-free, and chemical dopant-free approach to selective-area doping for the development of van der Waals electronics with excellent device performances.
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Research context

OpenAlex topics: 2D Materials and Applications · Graphene research and applications · MXene and MAX Phase Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan

Institute of Nanoscience, National Chung Hsing University, Taichung 40227, Taiwan

Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan

Institute of Electronic Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan

Department of Material Science and Engineering and i-Center for Advanced Science and Technology (i-CAST), National Chung Hsing University, Taichung 40227, Taiwan

Innovation and Development Center of Sustainable Agriculture, National Chung Hsing University, Taichung 40227, Taiwan

Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan

Instrument Center, National Chung Hsing University, Taichung 40227, Taiwan

Department of Chemistry, Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan

Department of Pure and Applied Physics, Kansai University, Osaka 564-8680, Japan

International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Ibaraki, Japan

Funding

Ministry of Education · Ministry of Science and Technology, Taiwan

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