DataVXACS Applied Materials & InterfacesPaper
journal article·2022-11-23

Heteroepitaxy of Large-Area, Monocrystalline Lead Halide Perovskite Films on Gallium Arsenide

Deying Kong, Yu Zhang, Dali Cheng, Enze Wang, Kaiyuan Zhang, Huachun Wang, Kai Liu, Lan Yin, Xing Sheng

ACS Applied Materials & Interfaces· Volume 14· Issue 46
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Source abstract

Abstract

Lead halide perovskite materials have been emerging as promising candidates for high-performance optoelectronic devices. Significant efforts have sought to realize monocrystalline perovskite films on a large scale. Here, we epitaxially grow monocrystalline methylammonium lead tribromide (MAPbBr3) films on lattice-matched gallium arsenide (GaAs) substrates on a centimeter scale. In particular, a solution-processed lead(II) sulfide (PbS) layer provides a lattice-matched and chemical protective interface for the solid–gas reaction to form MAPbBr3 films on GaAs. Structure characterizations identify the crystal orientations in the trilayer MAPbBr3/PbS/GaAs epistructure and confirm the monocrystalline nature of MAPbBr3 on PbS/GaAs. The dynamic evolution of surface morphologies during the growth indicates a two-step epitaxial process. These fundamental understandings and practical growth techniques offer a viable guideline to approach high-quality perovskite films for previously inaccessible applications.
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Research context

Electronic materials

OpenAlex topics: Perovskite Materials and Applications · Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Materials Science and Engineering, The Key Laboratory of Advanced Materials of Ministry of Education, State Key Laboratory of New Ceramics and Fine Processing, Center for Flexible Electronics Technology, Tsinghua University, Beijing100084, China

Department of Physics, Tsinghua University, Beijing100084, China

Department of Electronic Engineering, Beijing National Research Center for Information Science and Technology, Center for Flexible Electronics Technology, IDG/McGovern Institute for Brain Research, Tsinghua University, Beijing100084, China

Funding

Natural Science Foundation of Beijing Municipality · Tsinghua University · National Natural Science Foundation of China · State Key Laboratory of New Ceramic and Fine Processing, Tsinghua University

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