journal article·2026-07-08

Excellent Ferroelectricity and Thermal Stability in Ce-Doped HfO 2 Thin Films via Oxygen Vacancy Modulation

Junbo Xu, Yuqi Cao, Ruirui Kang, Yangfei Gao, Wenjing Qiao, Hai Ci, Junwen Mei, Mei Bai, Jiantuo Zhao, Yifeng Zhao, Kaizhu Zeng, Xiaojie Lou

ACS Applied Materials & Interfaces· Volume 18· Issue 26
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Abstract

This study introduces cerium (Ce) doping as a controllable strategy to regulate oxygen vacancy ( V O ) concentration and stabilize the metastable orthorhombic phase in HfO 2 thin films. Ce dopants, with low defect formation energy and high solubility, promote V O formation and reduce the free energy of the orthorhombic phase, enhancing its stability. Guided by first-principles calculations, chemical solution deposition was used to prepare Ce-doped HfO 2 thin films, enabling precise control over V O concentration and addressing the limitations of traditional post-treatment methods that struggle to control V O . The optimized Ce 0.2 Hf 0.8 O 2 film exhibits a high remanent polarization (2 P r ≈ 45 μC/cm 2 ), a low coercive field ( E c ≈ 1.08 MV/cm), an endurance lifetime surpassing 10 10 cycles, excellent retention (94.8%), and stable ferroelectricity up to 200 °C. These findings highlight the potential of Ce-doped HfO 2 for high-temperature nonvolatile memory (NVM) applications and provide a pathway for designing other high-performance HfO 2 -based systems.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices · Ferroelectric and Piezoelectric Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Frontier Institute of Science and Technology, State Key Laboratory for Mechanical Behavior of Materials, Interdisciplinary Research Center of Frontier Science and Technology

Xi’an Jiaotong University

School of Materials Science and Engineering

Xi’an University of Technology

State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering

Huazhong University of Science and Technology

Funding

China Postdoctoral Science Foundation · Natural Science Basic Research Program of Shaanxi Province · Fundamental Research Funds for the Central Universities · National Natural Science Foundation of China · Science and Technology Plan Project of Xi’an Beilin District of Shaanxi Province · Shaanxi Province Qin Chuangyuan “Scientists plus Engineers” Team Project

References (67)

Show source-provided references
1. 10.1126/science.adf613710.1126/science.adf6137 ↗
2. 10.1038/s41467-025-59018-410.1038/s41467-025-59018-4 ↗
3. 10.1038/s41578-022-00431-210.1038/s41578-022-00431-2 ↗
4. 10.1038/s41928-020-00492-710.1038/s41928-020-00492-7 ↗
5. 10.1063/1.363405210.1063/1.3634052 ↗
6. 10.1126/science.abf378910.1126/science.abf3789 ↗
7. 10.1038/s41563-018-0196-010.1038/s41563-018-0196-0 ↗
8. 10.1002/adfm.20250147010.1002/adfm.202501470 ↗
9. 10.1016/j.fmre.2023.02.01010.1016/j.fmre.2023.02.010 ↗
10. 10.1002/adma.20252031310.1002/adma.202520313 ↗
11. 10.1038/s41467-026-71265-710.1038/s41467-026-71265-7 ↗
12. 10.1039/C7NR02121F10.1039/C7NR02121F ↗
13. 10.1063/1.491913510.1063/1.4919135 ↗
14. 10.1016/j.jmst.2021.07.01610.1016/j.jmst.2021.07.016 ↗
15. 10.1039/C9CP01880H10.1039/C9CP01880H ↗
16. 10.1063/1.486600810.1063/1.4866008 ↗
17. 10.1557/mrc.2018.17510.1557/mrc.2018.175 ↗
18. 10.1063/1.498406810.1063/1.4984068 ↗
19. 10.1063/1.509788010.1063/1.5097880 ↗
20. 10.1021/acsaelm.0c0031910.1021/acsaelm.0c00319 ↗
21. 10.1016/j.comptc.2025.11560310.1016/j.comptc.2025.115603 ↗
22. 10.1021/acs.nanolett.5c0459710.1021/acs.nanolett.5c04597 ↗
23. 10.1063/5.020626710.1063/5.0206267 ↗
24. 10.1126/science.abk319510.1126/science.abk3195 ↗
25. 10.1016/j.ceramint.2025.02.09210.1016/j.ceramint.2025.02.092 ↗
26. 10.1103/PhysRevB.54.1116910.1103/PhysRevB.54.11169 ↗
27. 10.1063/1.486797510.1063/1.4867975 ↗
28. 10.3390/coatings1211176610.3390/coatings12111766 ↗
29. 10.1021/acsanm.7b0012410.1021/acsanm.7b00124 ↗
30. 10.1016/j.jssc.2023.12431610.1016/j.jssc.2023.124316 ↗
31. 10.1039/C7NR06342C10.1039/C7NR06342C ↗
32. 10.1002/aelm.20180052210.1002/aelm.201800522 ↗
33. 10.1016/j.jmat.2025.10107510.1016/j.jmat.2025.101075 ↗
34. 10.1021/acsaelm.3c0172510.1021/acsaelm.3c01725 ↗
35. 10.1039/C6TC04807B10.1039/C6TC04807B ↗
36. 10.1016/j.jallcom.2017.09.26410.1016/j.jallcom.2017.09.264 ↗
37. 10.1002/aelm.20200058510.1002/aelm.202000585 ↗
38. 10.1002/admi.20210090710.1002/admi.202100907 ↗
39. 10.1063/1.487928310.1063/1.4879283 ↗
40. 10.1016/j.ceramint.2020.06.01510.1016/j.ceramint.2020.06.015 ↗
41. 10.1016/j.ceramint.2022.10.26810.1016/j.ceramint.2022.10.268 ↗
42. 10.7567/JJAP.57.11UF0610.7567/JJAP.57.11UF06 ↗
43. 10.1063/1.498303110.1063/1.4983031 ↗
44. 10.1039/D1NR02667D10.1039/D1NR02667D ↗
45. 10.1016/j.jallcom.2023.17154110.1016/j.jallcom.2023.171541 ↗
46. 10.1063/5.002820010.1063/5.0028200 ↗
47. 10.1063/5.018889710.1063/5.0188897 ↗
48. 10.1063/5.004596610.1063/5.0045966 ↗
49. 10.1016/j.jallcom.2023.17208210.1016/j.jallcom.2023.172082 ↗
50. 10.1002/pssr.20190062610.1002/pssr.201900626 ↗
51. 10.1021/acsnano.3c0498310.1021/acsnano.3c04983 ↗
52. 10.1039/D2TC04182K10.1039/D2TC04182K ↗
53. 10.1063/1.511735810.1063/1.5117358 ↗
54. 10.1007/s10854-019-00874-410.1007/s10854-019-00874-4 ↗
55. 10.1002/adfm.20250922710.1002/adfm.202509227 ↗
56. 10.1002/adfm.20230174610.1002/adfm.202301746 ↗
57. 10.35848/1347-4065/ab6d8410.35848/1347-4065/ab6d84 ↗
58. 10.1021/acsaelm.4c0013410.1021/acsaelm.4c00134 ↗
59. 10.1063/1.509798010.1063/1.5097980 ↗
60. 10.1038/s41467-025-63048-310.1038/s41467-025-63048-3 ↗
61. 10.1116/11.2008040110.1116/11.20080401 ↗
62. 10.1039/c2jm33054g10.1039/c2jm33054g ↗
63. 10.1103/PhysRevB.82.02410910.1103/PhysRevB.82.024109 ↗
64. 10.1063/5.005786910.1063/5.0057869 ↗
65. 10.20517/microstructures.2023.5210.20517/microstructures.2023.52 ↗
66. 10.1016/j.apsusc.2015.03.17110.1016/j.apsusc.2015.03.171 ↗
67. 10.1039/C5TC01074H10.1039/C5TC01074H ↗