Correlating Carrier Localization to Optoelectronic Behavior of Monolayer MoS2
Source abstract
Abstract
In nanoscale semiconductor devices, electrical conductivity is significantly influenced by inherent disorder. This study examines the electrical transport properties of a single-layer MoS 2 field-effect transistor on a few-layered hBN substrate. Temperature-dependent transport measurements reveal that electrical conductivity is predominantly governed by a combination of simple activated and variable-range hopping mechanisms. The calculations on the experimental data yield a localization length around 5 nm for a typical defect density near the Fermi energy as 10 14 eVcm –2 . Additionally, optoelectronic transport measurements exhibit temperature-dependent persistent photoconductivity, attributed to electron localization within defect states. Calculations based on the temperature-dependent photoconductivity relaxation indicate a localization length of 7 nm, suggesting a direct correlation between the two phenomena.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · Advanced biosensing and bioanalysis techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics
Indian Institute of Science
Department of Physics, Gandhi Institute of Technology and Management (GITAM) Deemed to be University, Bangalore Campus, Nagedenahalli, Bangalore 562163, Karnataka India
Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
Centre for Nanoscience and Engineering
Multidisciplinary Units of Research on Translational Initiatives (MURTI), Gandhi Institute of Technology and Management (GITAM) Deemed to be University, Visakhapatnam, Gandhi Nagar, Rushikonda, Visakhapatnam 530045, Andhra Pradesh India
Funding
Ministry of Education, Culture, Sports, Science and Technology · Department of Science and Technology, Ministry of Science and Technology, India · Ministry of Education, India · Gandhi Institute of Technology and Management
References (67)
Show source-provided references
1. 10.1103/PhysRevLett.100.17550310.1103/PhysRevLett.100.175503 ↗
2. 10.1021/acsami.4c1855210.1021/acsami.4c18552 ↗
3. 10.1016/j.apsusc.2022.15590010.1016/j.apsusc.2022.155900 ↗
4. 10.1126/science.110289610.1126/science.1102896 ↗
5. 10.1103/PhysRevB.83.11532110.1103/PhysRevB.83.115321 ↗
6. 10.1143/JPSJ.77.03100510.1143/JPSJ.77.031005 ↗
7. 10.1016/j.jlumin.2011.02.03710.1016/j.jlumin.2011.02.037 ↗
8. 10.1063/1.499323010.1063/1.4993230 ↗
9. 10.1103/RevModPhys.57.28710.1103/RevModPhys.57.287 ↗
10. 10.1016/0370-1573(84)90103-010.1016/0370-1573(84)90103-0 ↗
11. 10.1038/nphoton.2013.2910.1038/nphoton.2013.29 ↗
12. 10.1038/nphoton.2013.3010.1038/nphoton.2013.30 ↗
13. 10.1364/OE.14.00773710.1364/OE.14.007737 ↗
14. 10.1103/PhysRevB.43.1277210.1103/PhysRevB.43.12772 ↗
15. 10.1038/nmat184910.1038/nmat1849 ↗
16. 10.1038/nnano.2010.27910.1038/nnano.2010.279 ↗
17. 10.1103/PhysRevLett.45.49410.1103/PhysRevLett.45.494 ↗
18. 10.1103/PhysRevLett.105.13680510.1103/PhysRevLett.105.136805 ↗
19. 10.1021/nl502339q10.1021/nl502339q ↗
20. 10.1038/nnano.2013.10010.1038/nnano.2013.100 ↗
21. 10.1038/s41699-024-00507-310.1038/s41699-024-00507-3 ↗
22. 10.1038/nnano.2012.9510.1038/nnano.2012.95 ↗
23. 10.1038/nnano.2012.9610.1038/nnano.2012.96 ↗
24. 10.1063/1.476829910.1063/1.4768299 ↗
25. 10.1038/nnano.2015.31410.1038/nnano.2015.314 ↗
26. 10.1063/5.022634610.1063/5.0226346 ↗
27. 10.1002/adma.20130124410.1002/adma.201301244 ↗
28. 10.1038/nnano.2013.20610.1038/nnano.2013.206 ↗
29. 10.1038/s41699-020-00182-010.1038/s41699-020-00182-0 ↗
30. 10.1038/srep1147210.1038/srep11472 ↗
31. 10.1002/adma.20120190910.1002/adma.201201909 ↗
32. 10.1103/PhysRevB.92.04140610.1103/PhysRevB.92.041406 ↗
33. 10.1103/PhysRevX.4.04101910.1103/PhysRevX.4.041019 ↗
34. 10.1103/PhysRevLett.74.486710.1103/PhysRevLett.74.4867 ↗
35. 10.1021/acsami.1c0903510.1021/acsami.1c09035 ↗
36. Ullah, M. S.; Yousuf, A. H. B.; Es-Sakhi, A. D.; Chowdhury, M. H. Analysis of Optical and Electronic Properties of MoS2 for Optoelectronics and FET Applications; 6th International Conference on Nano and Materials Science: ICNMS 2018; AIP, 2018.10.1063/1.5034320 ↗
37. 10.1002/adom.20210222610.1002/adom.202102226 ↗
38. 10.1016/j.physb.2019.41180910.1016/j.physb.2019.411809 ↗
39. 10.1016/0025-5408(86)90011-510.1016/0025-5408(86)90011-5 ↗
40. 10.1038/s41467-018-07558-310.1038/s41467-018-07558-3 ↗
41. 10.1088/2053-1583/1/1/01100210.1088/2053-1583/1/1/011002 ↗
42. 10.1038/nnano.2010.17210.1038/nnano.2010.172 ↗
43. 10.1016/j.rsurfi.2025.10044110.1016/j.rsurfi.2025.100441 ↗
44. 10.1080/0010751810823153110.1080/00107518108231531 ↗
45. 10.1016/j.mee.2015.02.04210.1016/j.mee.2015.02.042 ↗
46. 10.1016/S0169-4332(00)00352-410.1016/S0169-4332(00)00352-4 ↗
47. 10.1038/s41699-020-0138-y10.1038/s41699-020-0138-y ↗
48. 10.1021/acsami.1c0518510.1021/acsami.1c05185 ↗
49. 10.1103/PhysRevB.99.12120110.1103/PhysRevB.99.121201 ↗
50. 10.1103/PhysRevApplied.14.06402910.1103/PhysRevApplied.14.064029 ↗
51. 10.1021/nn202852j10.1021/nn202852j ↗
52. 10.1103/PhysRevB.40.338710.1103/PhysRevB.40.3387 ↗
53. 10.1103/PhysRevB.96.23543610.1103/PhysRevB.96.235436 ↗
54. 10.1038/ncomms364210.1038/ncomms3642 ↗
55. 10.1103/PhysRevLett.92.21680210.1103/PhysRevLett.92.216802 ↗
56. 10.1039/C9RA03150B10.1039/C9RA03150B ↗
57. 10.1021/acs.nanolett.7b0209910.1021/acs.nanolett.7b02099 ↗
58. 10.1103/PhysRevB.111.11541210.1103/PhysRevB.111.115412 ↗
59. 10.1063/1.491496810.1063/1.4914968 ↗
60. Shklovskii B. · Sov. Phys. Semicond. · 1973 · 6 · 1964
61. DvurechenskiÇ A. · Sov. J. Exp.Theor. Phys. Lett. · 1988 · 48 · 155
62. 10.1021/acs.jpclett.0c0086810.1021/acs.jpclett.0c00868 ↗
63. 10.1016/j.ssc.2013.09.02110.1016/j.ssc.2013.09.021 ↗
64. 10.1103/PhysRevApplied.17.06406210.1103/PhysRevApplied.17.064062 ↗
65. 10.1021/acsnano.7b0272610.1021/acsnano.7b02726 ↗
66. 10.1063/5.004665810.1063/5.0046658 ↗
67. 10.1016/j.nanoen.2020.10571610.1016/j.nanoen.2020.105716 ↗