journal article·2024-12-18

Optical Centers in Cr-, Mn-, and O-Doped AlN and Their Thermodynamic Stability Designed by a Multiscale Computational Approach

Mubashir Mansoor, Mehmet Ali Sarsil, Mehya Mansoor, Maryam Mansoor, Mert Tas, Yahya Sorkhe, Zuhal Er, Katarzyna Jabłczyńska, Bora Derin, Servet Timur, Mustafa Ürgen, Onur Ergen, Kamil Czelej

ACS Applied Materials & Interfaces· Volume 16· Issue 50
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Abstract

The optical centers in AlN can frequently exist in various charge states and can be accompanied by many coexisting defect species, creating a complex environment where mutual interactions are inevitable. Therefore, it is an immediate quest to design AlN crystal growth protocols that can target a specific optical center of interest and tune its concentration while preventing the formation of other unwanted point defects. Here, we provide a powerful workflow for point defect engineering in wide band gap, binary semiconductors that can be readily used to design optimal crystal growth protocols through combining CALPHAD-based phase analysis, and ab initio defect calculations. We investigate technologically relevant chromium- and manganese-induced optical centers in AlN, followed by studying the impact of oxygen that can be unintentionally incorporated during crystal growth. We present the dominant defects in all three cases as a function of process parameters along with the optical signatures. In the case of both Cr and Mn doping, the Cr Al and Mn Al defects are most likely, and increasing nitrogen partial pressure tends to enhance their concentration. We show that it is possible to use nitrogen fugacity as a tool for tuning the intensity of optical signatures. We calculate the Cr Al charge transition levels with respect to the valence-band maximum at 2.60 eV ( E + /– ), 3.83 eV ( E 0/– ), and 5.41 eV ( E – /2 – ) and electron and hole capture transitions with luminescence bands centered at 2.82, 1.91, and 3.15 eV. Unlike the Cr doping, Mn aggregation is unlikely, and the Mn Al –V N is the most abundant defect after Mn Al under most synthesis conditions. Oxygen tends to form complexes with V Al, and O N –V Al is a prominent defect following O N, with near-UV emission bands at 3.17, 3.26, and 3.81 eV. Our results agree with the available experimental optical signatures of Cr-, Mn-, and O-related centers and provide pathways on how to tune the luminous intensity of these centers through changes in growth conditions.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Thermal properties of materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Metallurgical and Materials Engineering Department, Istanbul Technical University, 34469 Maslak, Istanbul, Turkey

Department of Applied Physics, Istanbul Technical University, 34469 Maslak, Istanbul, Turkey

Department of Communications and Electrical Engineering, Istanbul Technical University, 34469 Maslak, Istanbul,Turkey

Department of Geological Engineering, Istanbul Technical University, 34469 Maslak, Istanbul, Turkey

Energy Institute, Istanbul Technical University, 34469 Maslak, Istanbul, Turkey

Maritime Engineering, Istanbul Technical University, Tuzla Campus, 34940 Tuzla, Istanbul,Turkey

Faculty of Chemical and Process Engineering, Warsaw University of Technology, Waryńskiego 1, 00-645 Warsaw, Poland

Funding

Narodowe Centrum Nauki · H2020 European Research Council · Narodowe Centrum Badan i Rozwoju

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