journal article·2024-08-21

Piezophototronic Effect Enhanced Flexible Tunneling Devices by Separating the Photosensitive Layer and the Piezoelectric Modulation Layer

Yitong Wang, Fangpei Li, Wenbo Peng, Wanli Xie, Xiaolong Zhao, Yongning He

ACS Applied Materials & Interfaces· Volume 16· Issue 33
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Abstract

The piezo-phototronic effect uses the piezoelectric potential/piezoelectric charge generated by the piezoelectric semiconductor material to regulate the energy band structure and photogenerated carrier behavior at the interface/junction, thereby modulating the device’s performance. The positive/negative piezoelectric charges generated at the interface of piezoelectric semiconductors can reduce the electron/hole barriers and thus enhance the transport of photogenerated carriers. However, electron/hole potential wells are formed when the electron/hole potential barrier caused by positive/negative piezoelectric charges is lowered too much, hindering the transport of photogenerated carriers. It is difficult to balance the relationship between potential barriers and potential wells while introducing the piezo-phototronic effect. In this work, a physical mechanism by separating the photosensitive layer and the piezoelectric modulation layer is proposed to deal with the above-mentioned issue in flexible tunneling devices. The piezoelectric modulation layer is solely used to adjust the electron/hole barriers, while the photosensitive layer is used to absorb photons and generate photogenerated carriers. This avoids the limitation on the transport of photogenerated carriers caused by potential wells in the piezoelectric semiconductor, thereby significantly increasing the adjustable range of the barriers. Experimental results show that the photoresponsivity of the flexible p-Si/Al 2 O 3 / n -ZnO tunneling device is optimized from 5.5 A/W to 35.8 A/W by the piezo-phototronic effect after separating the piezoelectric charges and photogenerated carriers. In addition, finite element analysis is used to simulate the influence of piezoelectric charges on the energy bands to corroborate the accuracy of the theoretical mechanism and experimental results. This work not only presents an optoelectronic device with excellent performance but also offers novel guidance for improving the performance of optoelectronic devices using the piezo-phototronic effect.
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Research context

OpenAlex topics: Perovskite Materials and Applications · Gas Sensing Nanomaterials and Sensors · Acoustic Wave Resonator Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Microelectronics, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, China

The Key Lab of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an, Shaanxi 710049, China

Funding

China Postdoctoral Science Foundation · National Natural Science Foundation of China · Shaanxi Province Postdoctoral Science Foundation

References (50)

Show source-provided references
1. 10.1002/smll.20210675710.1002/smll.202106757 ↗
2. 10.1021/acs.chemrev.3c0034910.1021/acs.chemrev.3c00349 ↗
3. 10.1002/adom.20180127410.1002/adom.201801274 ↗
4. 10.1002/adma.20200330910.1002/adma.202003309 ↗
5. 10.1088/2053-1583/ab626710.1088/2053-1583/ab6267 ↗
6. 10.1002/adma.20200623010.1002/adma.202006230 ↗
7. 10.1002/adma.20200495910.1002/adma.202004959 ↗
8. 10.1021/acs.chemrev.9b0053210.1021/acs.chemrev.9b00532 ↗
9. 10.1021/acsenergylett.0c0124010.1021/acsenergylett.0c01240 ↗
10. 10.1126/science.aaz914610.1126/science.aaz9146 ↗
11. 10.1002/adom.20230178910.1002/adom.202301789 ↗
12. 10.1002/smll.20210043910.1002/smll.202100439 ↗
13. 10.1021/acsami.3c1140910.1021/acsami.3c11409 ↗
14. 10.1021/acsnano.1c0200710.1021/acsnano.1c02007 ↗
15. 10.1021/nn901805g10.1021/nn901805g ↗
16. 10.1002/adma.20060291810.1002/adma.200602918 ↗
17. 10.1063/5.006229610.1063/5.0062296 ↗
18. 10.1016/j.nantod.2010.10.00810.1016/j.nantod.2010.10.008 ↗
19. 10.1063/5.005848210.1063/5.0058482 ↗
20. 10.1016/j.nanoen.2022.10694510.1016/j.nanoen.2022.106945 ↗
21. 10.1016/j.nanoen.2021.10669410.1016/j.nanoen.2021.106694 ↗
22. 10.1016/j.nanoen.2018.04.07010.1016/j.nanoen.2018.04.070 ↗
23. 10.1039/c2ee00057a10.1039/c2ee00057a ↗
24. 10.1002/aenm.20110028710.1002/aenm.201100287 ↗
25. 10.1021/acsnano.9b0012510.1021/acsnano.9b00125 ↗
26. 10.1016/j.nanoen.2014.11.03310.1016/j.nanoen.2014.11.033 ↗
27. 10.1021/acsnano.7b0027210.1021/acsnano.7b00272 ↗
28. 10.1002/adma.20140232810.1002/adma.201402328 ↗
29. 10.1021/nl202619d10.1021/nl202619d ↗
30. 10.1021/acsnano.8b0899810.1021/acsnano.8b08998 ↗
31. 10.1016/j.nanoen.2021.10609010.1016/j.nanoen.2021.106090 ↗
32. 10.1016/j.nanoen.2023.10853710.1016/j.nanoen.2023.108537 ↗
33. 10.1021/acsami.3c1504610.1021/acsami.3c15046 ↗
34. 10.1039/D0TC03802D10.1039/D0TC03802D ↗
35. 10.1016/j.nanoen.2018.05.00510.1016/j.nanoen.2018.05.005 ↗
36. 10.1002/admi.20230004710.1002/admi.202300047 ↗
37. 10.1002/adfm.20170689710.1002/adfm.201706897 ↗
38. 10.1016/j.nanoen.2018.03.02510.1016/j.nanoen.2018.03.025 ↗
39. 10.1002/adfm.20200599610.1002/adfm.202005996 ↗
40. 10.1021/acs.nanolett.7b0100410.1021/acs.nanolett.7b01004 ↗
41. 10.1021/nn401232k10.1021/nn401232k ↗
42. 10.1063/5.015166210.1063/5.0151662 ↗
43. 10.1038/natrevmats.2016.3110.1038/natrevmats.2016.31 ↗
44. 10.1038/nature1379210.1038/nature13792 ↗
45. 10.1016/j.nanoen.2020.10565310.1016/j.nanoen.2020.105653 ↗
46. 10.1021/acsaelm.3c0012010.1021/acsaelm.3c00120 ↗
47. 10.1088/2053-1583/aac96b10.1088/2053-1583/aac96b ↗
48. 10.1021/acsami.2c1801110.1021/acsami.2c18011 ↗
49. 10.1002/adma.20170589310.1002/adma.201705893 ↗
50. 10.1002/inf2.1240010.1002/inf2.12400 ↗