journal article·2024-05-22

Novel 2DEG System at the HfO2/STO Interface

Hang Yin, Huapei Zhu, Shuanhu Wang, Kexin Jin

ACS Applied Materials & Interfaces· Volume 16· Issue 20
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Abstract

Multifunctional integration in a single device has always been a hot research topic, especially for contradictory phenomena, one of which is the coexistence of ferroelectricity and metallicity. The complex oxide heterostructures, as symmetric breaking systems, provide a great possibility to incorporate different properties. Moreover, finding a series of oxide heterostructures to achieve this goal remains as a challenge. Here, taking the advantage of different physical phenomena, we use H 2 plasma to pretreat the SrTiO 3 (STO) substrate and then fabricate HfO 2 /STO heterostructures with it. The novel, well-repeatable metallic two-dimensional electron gas (2DEG) is directly obtained at the heterointerfaces without any further complex procedures, while the obvious ferroelectric-like behavior and Rashba spin–orbit coupling are also observed. The understanding of the mechanism, as well as the modified facile preparation procedure, would be meaningful for further development of ferroelectric metal in complex oxide heterostructures.
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Research context

OpenAlex topics: Electronic and Structural Properties of Oxides · Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Shaanxi Key Laboratory of Condensed Matter Structures and Properties and MOE Key Laboratory of Materials Physics and Chemistry Under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an 710072, China

Funding

National Natural Science Foundation of China · Natural Science Foundation of Shaanxi Province

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