journal article·2024-06-26

Reversible Mechanical Switching of Ferroelastic Stripe Domains in Multiferroic Thin Films

Fei Sun, Mengjun Wu, Jianhua Ren, Xintong Wang, Hui Yang, Xiaoyue Zhang, Weijin Chen, Yue Zheng

ACS Applied Materials & Interfaces· Volume 16· Issue 25
Publisher page

Abstract

The application potential of ferroelectric thin films largely relies on the controllability of their domain structure. Among the various proposed strategies, mechanical switching is being considered as a potential alternative to replace electrical switching for control of the domain structure of ferroelectric thin films via, e.g., the flexoelectric effect. So far, studies on mechanical switching are confined to out-of-plane polarization switching in ferroelectric thin films, which are in pristine or prepoled single-domain states. In this work, we report reversible in-plane mechanical switching of the monoclinic phase (M C phase) stripe domains in BiFeO 3 thin films can be realized by scanning tip force. Via controlling the fast scan direction of the scanning probe microscopy tip and the magnitude of the tip force, the effective trailing field induced by the local tip force can be rotated to consequently switch the net in-plane polarization of the two-variant stripe domain patterns by either 90° or 180°. Moreover, the monoclinic to rhombohedral (M C -R) phase transition occurs during mechanical switching with the distribution of R-phase domains dependent on the switching paths. These results extend our current understanding of the mechanical switching behavior in ferroelectric thin films and should be instructive for their future applications.
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Research context

OpenAlex topics: Ferroelectric and Piezoelectric Materials · Multiferroics and related materials · Magnetic and transport properties of perovskites and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China

State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China

Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China

School of Materials, Shenzhen Campus of Sun Yat-sen University, Shenzhen 518107, China

Funding

Science and Technology Foundation of Shenzhen City · National Natural Science Foundation of China · Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices

References (43)

Show source-provided references
1. Scott, J. Ferroelectric Memories; Springer Verlag, 2000.10.1007/978-3-662-04307-3 ↗
2. 10.1038/natrevmats.2016.8710.1038/natrevmats.2016.87 ↗
3. 10.1002/aelm.20210095210.1002/aelm.202100952 ↗
4. 10.1038/s41586-018-0434-210.1038/s41586-018-0434-2 ↗
5. 10.1126/science.112956410.1126/science.1129564 ↗
6. 10.1126/science.112623010.1126/science.1126230 ↗
7. 10.1063/1.35191010.1063/1.351910 ↗
8. 10.1126/science.276.5310.23810.1126/science.276.5310.238 ↗
9. 10.1038/s41563-018-0208-010.1038/s41563-018-0208-0 ↗
10. 10.1103/PhysRevApplied.11.02404810.1103/PhysRevApplied.11.024048 ↗
11. 10.1038/nmat487810.1038/nmat4878 ↗
12. 10.1038/nature1400410.1038/nature14004 ↗
13. 10.1038/nmat270310.1038/nmat2703 ↗
14. 10.1038/nphys390210.1038/nphys3902 ↗
15. 10.1038/nmat105110.1038/nmat1051 ↗
16. 10.4191/kcers.2019.56.4.0510.4191/kcers.2019.56.4.05 ↗
17. 10.1038/ncomms480110.1038/ncomms4801 ↗
18. 10.1002/adfm.20180752310.1002/adfm.201807523 ↗
19. 10.1038/s41563-019-0348-x10.1038/s41563-019-0348-x ↗
20. 10.1103/PhysRevLett.129.08760110.1103/PhysRevLett.129.087601 ↗
21. 10.1002/adma.20210639610.1002/adma.202106396 ↗
22. 10.1016/j.pmatsci.2022.10094310.1016/j.pmatsci.2022.100943 ↗
23. 10.1038/s41563-021-01098-w10.1038/s41563-021-01098-w ↗
24. 10.1038/nnano.2009.29310.1038/nnano.2009.293 ↗
25. 10.1038/nnano.2015.11410.1038/nnano.2015.114 ↗
26. 10.1038/ncomms597110.1038/ncomms5971 ↗
27. 10.1063/5.006150810.1063/5.0061508 ↗
28. 10.1002/adfm.20220824410.1002/adfm.202208244 ↗
29. 10.1021/acsami.2c2010610.1021/acsami.2c20106 ↗
30. 10.1002/aelm.20230064010.1002/aelm.202300640 ↗
31. 10.1038/s41565-018-0083-510.1038/s41565-018-0083-5 ↗
32. Kogan S. M. · Sov. Phys. Solid State · 1964 · 5 · 2069
33. 10.1038/nmat314110.1038/nmat3141 ↗
34. 10.1126/science.121869310.1126/science.1218693 ↗
35. 10.1021/nl303396n10.1021/nl303396n ↗
36. 10.1002/adfm.20150060010.1002/adfm.201500600 ↗
37. 10.1038/am.2017.310.1038/am.2017.3 ↗
38. 10.1063/5.006742910.1063/5.0067429 ↗
39. 10.1039/C7RA12233K10.1039/C7RA12233K ↗
40. 10.1016/j.jmps.2017.10.01110.1016/j.jmps.2017.10.011 ↗
41. 10.1038/s41524-022-00829-010.1038/s41524-022-00829-0 ↗
42. 10.1002/adfm.20221378710.1002/adfm.202213787 ↗
43. 10.1063/1.352537810.1063/1.3525378 ↗