journal article·2023-11-29

Realization of Robust and Ambient-Stable Room-Temperature Ferromagnetism in Wide Bandgap Semiconductor 2D Carbon Nitride Sheets

Yong Wang, Wei Xu, Lin Fu, Yu Zhang, Yizhang Wu, Liting Wu, Dingyi Yang, Shouzhong Peng, Jing Ning, Chi Zhang, Xuan Cui, Wei Zhong, Yan Liu, Qihua Xiong, Genquan Han, Yue Hao

ACS Applied Materials & Interfaces· Volume 15· Issue 47
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Abstract

Due to their weak intrinsic spin–orbit coupling and a distinct bandgap of 3.06 eV, 2D carbon nitride (CN) flakes are promising materials for next-generation spintronic devices. However, achieving strong room-temperature (RT) and ambient-stable ferromagnetism (FM) remains a huge challenge. Here, we demonstrate that the strong RT FM with a high Curie temperature ( T C ) up to ∼400 K and saturation magnetization ( M s ) of 2.91 emu/g can be achieved. Besides, the RT FM exhibits excellent air stability, with M s remaining stable for over 6 months. Through the magneto-optic Kerr effect, Hall device, X-ray magnetic circular dichroism, and magnetic force microscopy measurements, we acquired clear evidence of magnetic behavior and magnetic domain evolutions at room temperature. Electrical and optical measurements confirm that the Co-doped CN retains its semiconductor properties. Detailed structural characterizations confirm that the single-atom Co coordination and nitrogen defects as well as C–C covalent bonds are simultaneously introduced into CN. Density functional theory calculations reveal that introducing C–C bonds causes carrier spin polarization, and spin-polarized carrier-mediated magnetic exchange between adjacent Co atoms leads to long-range magnetic ordering in CN. We believe that our findings provide a strong experimental foundation for the enormous potential of 2D wide bandgap semiconductor spintronic devices.
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Research context

OpenAlex topics: ZnO doping and properties · 2D Materials and Applications · Electronic and Structural Properties of Oxides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Academy of Advanced Interdisciplinary Research, Xidian University, Xi’an 710071, China

Emerging Device and Chip Laboratory, Hangzhou Institute of Technology, Xidian University, Hangzhou 311200, China

National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures and Jiangsu Provincial Key Laboratory for Nanotechnology, Nanjing University, Nanjing 210093, China

Department of Physics, State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China

Department of Physics, Shaanxi University of Science and Technology, Xi’an 710021, China

Department of Applied Physical Sciences, The University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27514, United States

Fert Beijing Institute, Beijing Advanced Innovation Center for Big Data and Brain Computing, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100091, China

State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China

Funding

National Key Research and Development Program of China · National Postdoctoral Program for Innovative Talents · Natural Science Basic Research Program of Shaanxi Province · Fundamental Research Funds for the Central Universities · National Natural Science Foundation of China · Natural Science Foundation of Zhejiang Province

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