journal article·2024-05-15

Sensitive and Low-Noise Perovskite Nanocrystal-Organic Bulk Heterostructure X-ray Detectors Enabled by Sodium Bromide-Assisted In Situ Reparation

Yuyang Li, Hui Liu, Li Ding, Liqi Li, Lixiang Wang, Deren Yang, Yanjun Fang

ACS Applied Materials & Interfaces· Volume 16· Issue 19
Publisher page

Abstract

Perovskite nanocrystals (PNCs) offer unique advantages in large-area and thick-film deposition for X-ray detection applications due to the decoupling of the crystallization of perovskite from film formation, as well as their low-temperature and scalable deposition methods. However, the partial detachment of long-chain ligands in PNCs during the purification process would lead to the exposure of surface defects, making it challenging to ensure efficient charge carrier extraction and stable X-ray detection. In this study, we propose a beneficial strategy that involves the in situ reparation of these exposed defects with sodium bromide (NaBr) during the purification process to construct CsPbBr 3 PNC-organic bulk heterostructure X-ray detectors. The NaBr-passivated PNCs exhibit stronger photoluminescence intensity and lower trap density in films compared to those of the control samples, confirming the effective passivation of halide vacancy defects. Furthermore, the NiO x hole transport layer with remarkable electron blocking capability is introduced to further suppress the dark current of the devices. Consequently, the optimal devices exhibit a large sensitivity of 4237 μC Gy air –1 cm –2 and a low dark current density of 10 nA cm –2, as well as improved operational stability, which allows for high-contrast and low-dose X-ray imaging applications.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Perovskite Materials and Applications · Luminescence Properties of Advanced Materials · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China

Shangyu Institute of Semiconductor Materials, Shaoxing 312300, P. R. China

Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030024, P. R. China

Funding

Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering · Fundamental Research Funds for the Central Universities · National Natural Science Foundation of China · Natural Science Foundation of Zhejiang Province · K.P.Chao?s High Technology Development Foundation, Zhejiang University

References (35)

Show source-provided references
1. 10.1016/j.matt.2020.11.01510.1016/j.matt.2020.11.015 ↗
2. 10.1002/adma.20110245010.1002/adma.201102450 ↗
3. 10.1038/s41565-020-0683-810.1038/s41565-020-0683-8 ↗
4. 10.1021/acsenergylett.0c0243010.1021/acsenergylett.0c02430 ↗
5. 10.1038/nphoton.2016.5410.1038/nphoton.2016.54 ↗
6. 10.1088/0022-3727/33/21/32610.1088/0022-3727/33/21/326 ↗
7. 10.1038/nphoton.2017.9410.1038/nphoton.2017.94 ↗
8. 10.1038/s41467-019-08981-w10.1038/s41467-019-08981-w ↗
9. 10.1109/JSEN.2019.295031910.1109/JSEN.2019.2950319 ↗
10. Choquette M. · 2000 · 12810.1117/12.384485 ↗
11. 10.1002/adma.20190440510.1002/adma.201904405 ↗
12. 10.1126/sciadv.abg671610.1126/sciadv.abg6716 ↗
13. 10.1007/s12274-023-5487-310.1007/s12274-023-5487-3 ↗
14. 10.1016/j.matt.2021.01.02010.1016/j.matt.2021.01.020 ↗
15. 10.1002/advs.20200209810.1002/advs.202002098 ↗
16. 10.1021/acsami.7b0538110.1021/acsami.7b05381 ↗
17. 10.1002/adma.20190164410.1002/adma.201901644 ↗
18. 10.1002/adfm.20190661510.1002/adfm.201906615 ↗
19. 10.1038/s41565-022-01113-410.1038/s41565-022-01113-4 ↗
20. 10.1038/nmat311810.1038/nmat3118 ↗
21. 10.1038/nnano.2012.12710.1038/nnano.2012.127 ↗
22. 10.1002/adom.20210232010.1002/adom.202102320 ↗
23. 10.1021/jacs.5b0560210.1021/jacs.5b05602 ↗
24. 10.1021/acs.nanolett.5b0240410.1021/acs.nanolett.5b02404 ↗
25. 10.1021/acsnano.5b0629510.1021/acsnano.5b06295 ↗
26. 10.1002/adfm.20120226910.1002/adfm.201202269 ↗
27. 10.1002/adma.20140418910.1002/adma.201404189 ↗
28. 10.1002/aenm.20130146010.1002/aenm.201301460 ↗
29. 10.1002/adom.20190074710.1002/adom.201900747 ↗
30. 10.1016/j.jallcom.2021.16172110.1016/j.jallcom.2021.161721 ↗
31. 10.1038/s41565-020-0714-510.1038/s41565-020-0714-5 ↗
32. 10.1118/1.367395710.1118/1.3673957 ↗
33. 10.1023/A:102629741609310.1023/A:1026297416093 ↗
34. 10.1002/adma.20170375810.1002/adma.201703758 ↗
35. 10.1002/aelm.20180011410.1002/aelm.201800114 ↗