DataVXACS Applied Materials & InterfacesPaper
journal article·2021-11-24

Interface Trap Suppression and Electron Doping in Van der Waals Materials Using Cross-Linked Poly(vinylpyrrolidone)

Juchan Lee, Seungho Bang, Hyeon Jung Park, Dae Young Park, Chulho Park, Ngoc Thanh Duong, Yo Seob Won, Jiseong Jang, Hye Min Oh, Soo Ho Choi, Ki Kang Kim, Mun Seok Jeong

ACS Applied Materials & Interfaces· Volume 13· Issue 46
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Source abstract

Abstract

The instability of van der Waals (vdW) materials leads to spontaneous morphological and chemical transformations in the air. Although the passivation of vdW materials with other resistive materials is often used to solve stability issues, this passivation layer can block carrier injection and thus interfere with charge transfer doping. In this study, a facile method is proposed for n-doping and mediation of Se vacancies in tungsten diselenide (WSe2) by poly(vinylpyrrolidone) (PVP) coating. The major carrier type of the PVP-coated WSe2-based field-effect transistor (FET) was converted from hole (p-type) to electron (n-type). Furthermore, the vacancy-induced interface trap density was reduced by approximately 500 times. This study provides a practical doping and passivation method for the van der Waals materials, as well as a comprehensive understanding of the chemical reaction and electronic transport in these materials.
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Research context

Electronic materials

OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · MXene and MAX Phase Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics, Hanyang University (HYU), Seoul 04763, Republic of Korea

Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea

Department of Materials Science and Engineering, Phenikaa University, Hanoi 12116, Viet Nam

Department of Physics, Kunsan National University, Kunsan 54150, Republic of Korea

Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science, Suwon 16419, Republic of Korea

Department of Energy Engineering, Hanyang University (HYU), Seoul 04763, Republic of Korea

Funding

Samsung Science and Technology Foundation · National Research Foundation of Korea · U.S. Department of Defense · Institute for Basic Science · Korea Evaluation Institute of Industrial Technology

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