Nonvolatile Control of the Electronic Properties of In2–xCrxO3 Semiconductor Films by Ferroelectric Polarization Charge
Abstract
Research context
OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · Multiferroics and related materials
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Affiliations
State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
School of Materials Science and Engineering and Jiangxi Key Laboratory for Two-Dimensional Materials and Devices, Nanchang University, Nanchang 330031, China
Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China
Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and Collaborative Innovation Center of Advanced Microstructures, University of Science and Technology of China, Hefei 230026, China
Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
Funding
Ministry of Science and Technology of the People's Republic of China · State Key Laboratory of High Performance Ceramics and Superfine Microstructure · National Natural Science Foundation of China · Jiangxi Engineering Laboratory for Thin Films and Devices