Chemically Homogeneous and Thermally Robust Ni1–xPtxSi Film Formed Under a Non-Equilibrium Melting/Quenching Condition
Source abstract
Abstract
To synthesize a thermally robust Ni 1– x Pt x Si film suitable for ultrashallow junctions in advanced metal-oxide-semiconductor field-effect transistors, we used a continuous laser beam to carry out millisecond annealing (MSA) on a preformed Ni-rich silicide film at a local surface temperature above 1000 °C while heating the substrate to initiate a phase transition. The melting and quenching process by this unique high-temperature MSA process formed a Ni 1– x Pt x Si film with homogeneous Pt distribution across the entire film thickness. After additional substantial thermal treatment up to 800 °C, the noble Ni 1– x Pt x Si film maintained a low-resistive phase without agglomeration and even exhibited interface flattening with the underlying Si substrate.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and interfaces · Semiconductor materials and devices · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Semiconductor R&D Center, Samsung Electronics, Hwaseong 18488, Republic of Korea
Department of Semiconductor and Display Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
Samsung Advanced Institute of Technology, Suwon 16678, Republic of Korea
Funding
National Research Foundation of Korea · Ministry of Trade, Industry and Energy · Korea Semiconductor Research Consortium
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