GaOx@GaN Nanowire Arrays on Flexible Graphite Paper with Tunable Persistent Photoconductivity
Source abstract
Abstract
Flexible optoelectronic synaptic devices that functionally imitate the neural behavior with tunable optoelectronic characteristics are crucial to the development of advanced bioinspired neural networks. In this work, amorphous oxide-decorated GaN nanowire arrays (GaOx@GaN NWAs) are prepared on flexible graphite paper. A GaOx@GaN NWA-based flexible device has tunable persistent photoconductivity (PPC) and shows a conversible fast/slow decay process (SDP). Photoconductivity can be modulated by single or double light pulses with different illumination powers and biases. PPC gives rise to the high-performance SDP such as a long decay time of 2.3 × 105 s. The modulation mechanism is proposed and discussed. Our results reveal an innovative and efficient strategy to produce decorated NWAs on a flexible substrate with tunable optoelectronic properties and exhibit potential for flexible neuromorphic system applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neural Networks and Reservoir Computing · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Physics, Beihang University, Beijing 100191, China
Institute of New Energy Materials and Devices, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
Institute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 999077, China
Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon 518057, Hong Kong, China
Funding
City University of Hong Kong · Beijing Academy of Quantum Information Sciences · National Natural Science Foundation of China
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