journal article·2021-02-17

Improving Aluminum Ultraviolet Plasmonic Activity through a 1 nm ta-C Film

Jie Wang, Zhenqiu Wu, Junhan Wei, Junzheng Hu, Huikang Yu, Guangxu Su, Lumang Hu, Xiaodong Yan, Peng Zhan, Fanxin Liu

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Abstract

Aluminum (Al) can actively support plasmonic response in the ultraviolet (UV) range compared to noble metals (e.g., Au, Ag) and thus has broad applications including UV sensing, displays, and photovoltaics. High-quality Al films with no oxidation are essential and critical in these applications. However, Al is very prone to fast oxidation in air, which critically depends on the fabrication process. Here, we report that by leveraging the in situ sputter etching and sputter deposition of a 1 nm tetrahedral amorphous carbon (ta-C) film on the Al nanostructures, Al plasmonic activity can be improved. The prior sputter etching process greatly reduces the oxidized layer of the Al films, and the subsequent sputter deposition of ta-C keeps Al oxidation-free. The ta-C film outperforms the naturally passivated Al2O3 layer on the Al film because the ta-C film has a denser structure, higher permittivity, and better biocompatibility. Therefore, it can effectively improve the plasmonic response of Al and be beneficial to molecule sensing, which is proved in our experiments and is also verified in simulations. Our results can enable the various applications based on plasmon resonance in the UV range.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Silicon Nanostructures and Photoluminescence · Ga2O3 and related materials · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Applied Physics, Zhejiang University of Technology, Hangzhou 310023, P. R. China

School of Physics, National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China

Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States

Funding

Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China

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