journal article·2020-06-24

Macroscopic Versus Microscopic Schottky Barrier Determination at (Au/Pt)/Ge(100): Interfacial Local Modulation

Andrea Gerbi, Renato Buzio, Cesar González, Nicola Manca, Daniele Marrè, Sergio Marras, Mirko Prato, Lloyd Bell, Sergio Di Matteo, Fernando Flores, Pedro L. de Andres

ACS Applied Materials & Interfaces· Volume 12· Issue 25
Publisher page

Abstract

Macroscopic current-voltage measurements and nanoscopic ballistic electron emission spectroscopy (BEES) have been used to probe the Schottky barrier height (SBH) at metal/Ge(100) junctions for two metal electrodes (Au and Pt) and different metallization methods, specifically, thermal-vapor and laser-vapor deposition. Analysis of macroscopic current-voltage characteristics indicates that a SBH of 0.61-0.63 eV controls rectification at room temperature. On the other hand, BEES measured at 80 K reveals the coexistence of two distinct barriers at the nanoscale, taking values in the ranges 0.61-0.64 and 0.70-0.74 eV for the cases studied. For each metal-semiconductor junction, the macroscopic measurement agrees well with the lower barrier found with BEES. Ab initio modeling of BEES spectra ascribes the two barriers to two different atomic registries between the metals and the Ge(100) surface, a significant relevant insight for next-generation highly miniaturized Ge-based devices.
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Research context

OpenAlex topics: Semiconductor materials and interfaces · Semiconductor materials and devices · Integrated Circuits and Semiconductor Failure Analysis

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Innovative Materials and Devices, CNR-SPIN Institute for Superconductors, Corso Perrone 24, I-16152 Genova, Italy

Física Teórica de la Materia Condensada-IFIMAC, Universidad Autonoma de Madrid, E-28049 Madrid, Spain

Dipartimento di Fisica, Universita degli Studi di Genova, via Dodecaneso 33, 16146 Genova, Italy

Materials Characterization Facility, Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova, Italy

Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91104, United States

University Rennes, CNRS, IPR (Institut de Physique de Rennes)—UMR 6251, F-35000 Rennes, France

Instituto de Ciencia de Materiales de Madrid-CSIC, Cantoblanco, E-28049 Madrid, Spain

Funding

Ministero dell?Istruzione, dell?Universit? e della Ricerca · Ministerio de Econom?a y Competitividad · Horizon 2020 Framework Programme

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